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We report the structural and electronic properties of NbN/GaN junctions grown by plasma-assisted molecular beam epitaxy. High crystal-quality NbN films grown on GaN exhibit superconducting critical temperatures in excess of 10 K for thicknesses as low as 3 nm. We observe that the NbN lattice adopts the stacking sequence of the underlying GaN and that domain boundaries in the NbN thereby occur at the site of atomic steps in the GaN surface. The electronic properties of the NbN/GaN junction are characterized using Schottky barrier diodes. Current–voltage–temperature and capacitance–voltage measurements are used to determine the Schottky barrier height of the NbN/GaN junction, which we conclude is ∼1.3 eV.
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This content will become publicly available on June 30, 2026
Integrating magnetic Co-nanopillars in a NbN-based VAN thin film as a multifunctional hybrid metamaterial
An epitaxial NbN–Co VAN thin film was deposited on a MgO substrate with a cubic NbN phase, which presents ferromagnet properties with strong out-of-plane magnetic anisotropy. This hybrid metamaterial could find future applications in device design.
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- PAR ID:
- 10614296
- Publisher / Repository:
- RSC
- Date Published:
- Journal Name:
- Materials Horizons
- Volume:
- 12
- Issue:
- 13
- ISSN:
- 2051-6347
- Page Range / eLocation ID:
- 4740 to 4748
- Subject(s) / Keyword(s):
- Superconductor, NbN, vertically aligned nanocomposites,
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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