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In the rapidly evolving field of quantum computing, niobium nitride (NbN) superconductors have emerged as integral components due to their unique structural properties, including a high superconducting transition temperature (Tc), exceptional electrical conductivity, and compatibility with advanced device architectures. This study investigates the impact of high-temperature annealing and high-dose gamma irradiation on the structural, electrical, and superconducting properties of NbN films grown on GaN via reactive DC magnetron sputtering. The as-deposited cubic δ-NbN (111) films exhibited a high intensity distinct x-ray diffraction (XRD) peak, a high Tc of 12.82 K, and an atomically flat surface. Annealing at 500 and 950 °C for varying durations revealed notable structural and surface changes. High-resolution scanning transmission electron microscopy (STEM) indicated improved local ordering, while atomic force microscopy showed reduced surface roughness after annealing. X-ray photoelectron spectroscopy revealed a gradual increase in the Nb/N ratio with higher annealing temperatures and durations. High-resolution XRD and STEM analyses showed lattice constant modifications in δ-NbN films, attributed to residual stress changes following annealing. Additionally, XRD φ-scans revealed a sixfold symmetry in the NbN films due to rotational domains relative to GaN. While Tc remained stable after annealing at 500 °C, increasing the annealing temperature to 950 °C degraded Tc to 8.7 K and reduced the residual resistivity ratio from 0.85 in the as-deposited films to 0.29 after 30 min annealing. The effects of high-dose gamma radiation [5 Mrad (Si)] were also studied, demonstrating minimal changes to crystallinity and superconducting performance, indicating excellent radiation resilience. These findings highlight the potential of NbN superconductors for integration into advanced quantum devices and its suitability for applications in radiation-intensive environments such as space, satellites, and nuclear power plants.
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Grain structure and superconducting behavior of electrodeposited ReMo thin films
ReMo binary alloy films with a maximum Mo content of 25 at. % are successfully electrodeposited using high concentration acetate solutions in the presence of citric acid. The electrochemical behavior of the ReMo alloy is studied using cyclic voltammetry and anodic stripping methods. Different techniques, including electron microscopy, x-ray diffraction, and four-point probe resistance measurements at cryogenic temperature, are used to characterize the surface morphology, crystal structure, and superconducting critical temperature of alloys, respectively. While all films exhibit a crystalline hcp phase after 700 °C annealing, the film with the highest 25 at. % Mo content shows a second crystalline cubic phase. Mo doping preserves the enhanced superconducting transition temperature (Tc) in electrodeposited amorphous Re films and improves the stability of Tc against thermal annealing at a temperature of 200 °C. This is the first successful demonstration to use a dopant to stabilize the enhanced Tc of electrodeposited films, enabling the fabrication and operation of superconducting connectors above the intrinsic Tc of the materials.
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- Award ID(s):
- 2215143
- PAR ID:
- 10615843
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 138
- Issue:
- 3
- ISSN:
- 0021-8979
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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