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The nanoscale electrical and mechanical properties in the CdTe thin films solar cells were investigated using the scanning probe microscopy. The comparative localized electrical and mechanical properties between as-grown and CdCl2 treated CdTe thin films for the grain and grain boundaries were studied using the conductive atomic force microscopy (cAFM) and force modulation microscopy (FMM). An increased electrical behavior and decreased elastic stiffness in the CdCl2 treated thin films were recorded to elucidate the impact from the grain growth of CdTe grains. On applying a simulated working electrical bias into the CdTe thin-film solar cells, the electric field across the CdTe film can increase the softness of CdTe thin film. The results imply the presence of a potential mechanical failure site in the CdTe grain boundary, which may lead to device degradation.
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Probing the arsenic distribution and dopant activation in poly-crystalline CdTe1−xSex solar cell absorbers
We examine the arsenic distribution and its influence on dopant activation in poly-crystalline CdTe1−xSex solar cell absorbers prepared by vapor transport deposition followed by CdCl2 annealing. For as-deposited CdTe:As, local-electrode atom probe (LEAP) tomography reveals non-uniform distributions of arsenic clusters in the top “doped” layers. Following CdCl2 annealing, secondary ion mass spectrometry suggests that arsenic has diffused into the entire CdTe layer, while LEAP tomography reveals dissolution of the clusters, with nearly uniform distribution of arsenic atoms in CdTe. Since the arsenic fraction (fAs) is 1 × 1018 cm−3, but the hole density ranges from 7.5 to 9.5 × 1015 cm−3, we hypothesize that a large fraction of the arsenic has been incorporated into interstitial sites or cadmium substitutional sites, resulting in limited dopant activation.
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- Award ID(s):
- 2240388
- PAR ID:
- 10622840
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 138
- Issue:
- 4
- ISSN:
- 0021-8979
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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