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Antimony selenide (Sb2Se3) has excellent directional optical and electronic behaviors due to its quasi-1D nanoribbons structure. The photovoltaic performance of Sb2Se3 solar cells largely depends on the orientation of the nanoribbons. It is desired to grow these Sb2Se3 ribbons normal to the substrate to enhance photoexcited carrier transport. Therefore, it is necessary to develop a strategy for the vertical growth of Sb2Se3 nanoribbons to achieve high-efficiency solar cells. Since antimony sulfide (Sb2S3) and Sb2Se3 are from the same space group (Pbnm) and have the same crystal structure, herein an ultrathin layer (≈20 nm) of Sb2S3 has been used to assist the vertical growth of Sb2Se3 nanoribbons to improve the overall efficiency of Sb2Se3 solar cell. The Sb2S3 thin layer deposited by the hydrothermal process helps the Sb2Se3 ribbons grow normal to the substrate and increases the efficiency from 5.65% to 7.44% through the improvement of all solar cell parameters. This work is expected to open a new direction to tailor the Sb2Se3 grain growth and further develop the Sb2Se3 solar cell in the future.
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Heteroepitaxial growth of highly anisotropic Sb2Se3 films on GaAs
We prepare quasi-1D films of Sb2Se3 on GaAs by molecular beam epitaxy. The aligned grains and anisotropic bonding hierarchy of the Sb2Se3 unit cell together produce giant birefringence in the near-infrared.
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- Award ID(s):
- 2036520
- PAR ID:
- 10628117
- Publisher / Repository:
- Royal Society of Chemistry
- Date Published:
- Journal Name:
- Materials Horizons
- Volume:
- 12
- Issue:
- 15
- ISSN:
- 2051-6347
- Page Range / eLocation ID:
- 5829 to 5838
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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The antimony selenide (Sb2Se3) thin film solar cells technology become promising due to its excellent anisotropic charge transport and brilliant light absorption capability. Especially, the device performance heavily relies on the vertically oriented Sb2Se3 grain to promote photoexcited carrier transport. However, crystalline orientation control has been a major issue in Sb2Se3 thin film solar cells. In this work, a new strategy has been developed to tailor the crystal growth of Sb2Se3 ribbons perpendicular to the substrate by using the structural heterostructured CdS buffer layer. The heterostructured CdS buffer layer was formed by a dual layer of CdS nanorods and nanoparticles. The hexagonal CdS nanorods passivated by a thin cubic CdS nanoparticle layer can promote [211] and [221] directional growth of Sb2Se3 ribbons using a close space sublimation approach. The improved buffer/absorber interface, reduced interface defects, and recombination loss contribute to the improved device efficiency of 7.16%. This new structural heterostructured CdS buffer layer can regulate Sb2Se3 nanoribbons crystal growth and pave the way to further improve the low-dimensional chalcogenide thin film solar cell efficiency.more » « less
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- Free Publicly Accessible Full Text
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Accepted Manuscript
- Journal Article:
- https://doi.org/10.1039/D5MH00225G
