skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Growth of zinc oxide nanowires by a hot water deposition method
Recently, various methods have been developed for synthesizing zinc oxide (ZnO) nanostructures, including physical and chemical vapor deposition, as well as wet chemistry. These common methods require either high temperature, high vacuum, or toxic chemicals. In this study, we report the growth of zinc oxide ZnO nanowires by a new hot water deposition (HWD) method on various types of substrates, including copper plates, foams, and meshes, as well as on indium tin oxide (ITO)-coated glasses (ITO/glass). HWD is derived from the hot water treatment (HWT) method, which involves immersing piece(s) of metal and substrate(s) in hot deionized water and does not require any additives or catalysts. Metal acts as the source of metal oxide molecules that migrate in water and deposit on the substrate surface to form metal oxide nanostructures (MONSTRs). The morphological and crystallographic analyses of the source-metals and substrates revealed the presence of uniformly crystalline ZnO nanorods after the HWD. In addition, the growth mechanism of ZnO nanowires using HWD is discussed. This process is simple, inexpensive, low temperature, scalable, and eco-friendly. Moreover, HWD can be used to deposit a large variety of MONSTRs on almost any type of substrate material or geometry.  more » « less
Award ID(s):
2228891
PAR ID:
10630219
Author(s) / Creator(s):
; ; ; ;
Publisher / Repository:
Institute of Physics
Date Published:
Journal Name:
Nanotechnology
Volume:
36
Issue:
3
ISSN:
0957-4484
Page Range / eLocation ID:
035601
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Hot water treatment (HWT) is a versatile technique for synthesizing metal oxide nanostructures (MONSTRs) by immersing metal substrates in hot water, typically in glass beakers. The proximity of substrates to the heat source during HWT can influence the temperature of the substrate and subsequently impact MONSTR growth. In our study, zinc (Zn) substrates underwent HWT at the base of a glass beaker in contact with a hot plate and at four different vertical distances from the base. While the set temperature of deionized (DI) water was 75.0 °C, the substrate locations exhibited variations, notably with the base reaching 95.0 °C. Scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and Raman spectroscopy showed stoichiometric and crystalline zinc oxide (ZnO) nanorods. ZnO rods on the base, exposed to higher temperatures, displayed greater growth in length and diameter, and higher crystallinity. Nanorods with increasing vertical distances from the base exhibited a logarithmic decrease in length despite identical temperatures, whereas their diameters remained constant. We attribute these findings to crucial HWT growth mechanisms like surface diffusion and “plugging”, influenced by temperature and water flow within the beaker. Our results provide insights for optimizing synthesis parameters to effectively control MONSTR growth through HWT. 
    more » « less
  2. The electrical properties of graphene on dielectric substrates, such as silicon carbide (SiC), have received much attention due to their interesting applications. This work presents a method to grow graphene on a 6H-SiC substrate at a pressure of 35 Torr by using the hot filament chemical vapor deposition (HFCVD) technique. The graphene deposition was conducted in an atmosphere of methane and hydrogen at a temperature of 950 °C. The graphene films were analyzed using Raman spectroscopy, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray, and X-ray photoelectron spectroscopy. Raman mapping and AFM measurements indicated that few-layer and multilayer graphene were deposited from the external carbon source depending on the growth parameter conditions. The compositional analysis confirmed the presence of graphene deposition on SiC substrates and the absence of any metal involved in the growth process. 
    more » « less
  3. One of the most significant drawbacks of metal oxide (MOS) based chemiresistive gas sensors is the requirement of high operating temperature (250–450 °C), which results in significant power consumption and shorter lifetime. To develop room temperature (21±2 °C) MOS chemiresistive gas sensors, the sensing performance of different MOS nanostructures (i.e., tin (IV) oxide (SnO2) nanoparticles (NPs), indium (III) oxide (In2O3) NPs, zinc oxide (ZnO) NPs, tungsten trioxide (WO3) NPs, copper oxide (CuO) nanotubes (NTs), and indium tin oxide (In90Sn10O3 (ITO)) NPs) were systematically investigated toward different toxic industrial chemicals (TICs) (i.e., nitrogen dioxide (NO2), ammonia (NH3), hydrogen sulfide (H2S), carbon monoxide (CO), sulfur dioxide (SO2) and volatile organic compounds (VOCs) (i.e., acetone (C3H6O), toluene (C6H5CH3), ethylbenzene (C6H5CH2CH3), and p-xylene (C6H4(CH3)2)) in the presence and absence of 400 nm UV light illumination. Sensing performance enhancement through photoexcitation is strongly dependent on the target analytes. Under 400 nm UV photoexcitation at 76.0 mW/cm2 intensity, room temperature (21±2 °C) NO2 sensing was readily achieved where SnO2 NPs exhibited the highest sensor response (S = 474.4 toward 10 ppmm (parts per million by mass)) with good recovery followed by ZnO NPs > In2O3 NPs > ITO NPs. Meanwhile, indirect bandgap n-type WO3 NPs showed limited NO2 sensing performance under illumination, whereas p-type CuO NTs showed relatively good sensing response. The most significant improvements in SnO2 compared to other MOS nanoparticles might be attributed to the highest number of photogeneration electrons, which rapidly reacted with adsorbed species to enhance the reaction kinetics. WO3 NPs showed a unique sensing response toward aromatic compounds (e.g., ethylbenzene and p-xylene) under UV illumination, where maximum sensitivity was achieved under 36 mW/cm2 irradiation. Changing light intensity from 0.0 to 36.4 mW/cm2, WO3 showed 15.4-fold and 6.3-fold enhancement in sensing response toward 25 ppmm ethylbenzene and 100 ppmm p-xylene, respectively. 400 nm optical excitation has a limited effect on the sensing performance toward CO, SO2, toluene, and acetone. 
    more » « less
  4. Although it has long been known that metal-containing compounds can serve as catalysts for chemical vapor deposition (CVD) of films from other precursors, we show that metal-containing compounds can also inhibit CVD nucleation or growth. For two precursors A and B with growth onset temperatures TgA < TgB when used independently, it is possible that B can inhibit growth from A when the two precursors are coflowed onto a substrate at a temperature (T) where TgA < T < TgB. Here, we consider three precursors: AlH3⋅NMe3 (Tg = 130 °C, Me = CH3), Hf(BH4)4 (Tg = 170 °C), and AlMe3 (Tg = 300 °C). We find that (i) nucleation of Al from AlH3⋅NMe3 is inhibited by Hf(BH4)4 at 150 °C on two oxide surfaces (Si with native oxide and borosilicate glass), (ii) nucleation and growth of HfB2 is inhibited by AlMe3 at 250 °C on native oxide substrates and on HfB2 nuclei, and (iii) nucleation of Al from AlH3⋅NMe3 is inhibited by AlMe3 at 200 °C on native oxide substrates. Inhibition by Hf(BH4)4 is transient and persists only as long as its coflow is maintained; in contrast, AlMe3 inhibition of HfB2 growth is more permanent and continues after coflow is halted. As a result of nucleation inhibition, AlMe3 coflow enhances selectivity for HfB2 deposition on Au (growth) over Al2O3 (nongrowth) surfaces, and Hf(BH4)4 coflow makes it possible to deposit Al on Al nuclei and not on the surrounding oxide substrate. We propose the following criteria to identify candidate molecules for other precursor–inhibitor combinations: (i) the potential inhibitor should have a higher Tg than the desired film precursor, (ii) the potential inhibitor should be unreactive toward the desired film precursor, and (iii) at the desired growth temperature, the potential inhibitor should adsorb strongly enough to form a saturated monolayer on the intended nongrowth surface at accessible inhibitor pressures. 
    more » « less
  5. Abstract Carbon-doped silicon oxide (CDO) thin films as low dielectric constant materials were deposited on both n-type silicon (Si) (100) and indium tin oxide coated polyethylene naphthalate (ITO/PEN) substrates, using the plasma-enhanced chemical vapor deposition of tetrakis(trimethylsilyoxy)silane (TTMSS) precursor. Chemical structures of the CDO films were analyzed by using FTIR (Fourier transformation infrared) spectroscopy and XPS (X-ray photoelectron spectroscopy). The chemical bonds related with hydrocarbon and Si–O were the main characteristics of the CDO films. The prominent peaks from the FTIR spectra included Si–O–Si stretching, Si–CH3 bending, Si–(CH3)x stretching, and CHx stretching modes. XPS spectra composed of the O1s, C1s, and Si2p electron orbitals were used to quantitatively analyze the elemental composition of the CDO films. The growth mechanisms of CDO films were dependent on the substrate type. For the ITO/PEN substrate, the lack of Si atoms on the ITO surface made difficulty in forming initial Si–O bonds, resulting in insufficient Si–O–Si structure. In comparison, the CDO films could grow easily on Si substrates due to pre-existing Si–O bonds on the surface. The chemical structures of the CDO films are expected to affect electrical and mechanical performances. 
    more » « less