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Title: A novel method for through-silicon via characterization based on diffraction fringe analysis
The precision metrology of through-hole silicon via (TSV) in the semiconductor industry has remained a critical challenge as its critical dimension (CD) reduces. In this letter, we report a novel method for TSV geometric feature measurement and characterization. By illuminating a collimated infrared laser beam to the TSV and then analyzing the TSV edge-induced diffraction interferometric fringe patterns, multiple geometric information of the TSV could be characterized, establishing its database. This computational approach to TSV characterization was validated by experiments. Being non-destructive and easy to deploy, this method provides a low cost and high efficiency solution for TSV metrology.  more » « less
Award ID(s):
2426512
PAR ID:
10630562
Author(s) / Creator(s):
; ;
Publisher / Repository:
Ultramicroscopy
Date Published:
Journal Name:
Ultramicroscopy
Volume:
272
Issue:
C
ISSN:
0304-3991
Page Range / eLocation ID:
114136
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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