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Abstract A non‐volatile conjugated polymer‐based electrochemical memristor (cPECM), derived from sodium 4‐[(2,3‐dihydrothieno[3,4‐b][1,4]dioxin‐2‐yl)methoxy]butane‐2‐sulfonate (S‐EDOT), is fabricated through roll‐to‐roll printing and exhibited neuromorphic properties. The 3‐terminal device employed a “read” channel where conductivity of the water‐soluble, self‐doped S‐PEDOT is equated to synaptic weight and was electrically decoupled from the programming electrode. For the model system, a +2500 mV programming pulse of 100 ms duration resulted in a 0.136 μS resolution in conductivity change, giving over 1000 distinct conductivity states for one cycle. The minimum programming power requirements of the cPECM was 0.31 pJ mm−2and with advanced printing techniques, a 0.1 fJ requirement for a 20 μm device is achievable. The mathematical operations of addition, subtraction, multiplication, and division are demonstrated with a single cPECM, as well as the logic gates AND, OR, NAND, and NOR. This demonstration of a printed cPECM is the first step toward the implementation of a mass produced electrochemical memristor that combines information storage and processing and may allow for the realization of printable artificial neural networks.
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Cascaded Logic Gates with Printed Electrochemical Memristors
Electrochemical‐based memristors are highly attractive that are capable of nonvolatile analog tuning, long‐term state stability, low power consumption, device scalability, and fast switching speeds. Through the combination of film deposition techniques, i.e., vapor phase polymerization and screen printing, fabrication of a poly(4‐(6‐hexyl)‐4H‐dithieno[3,2‐b:2′,3′‐d]pyrrole) (p6DTP)‐based synaptic‐emulating three‐terminal memristor is designed. Through voltage‐driven pulse programming, and square waves with an amplitude of 100 mV and duration of 100 msec, the device exhibits a power consumption of 1 pJmm−2per synaptic event. By analyzing the fundamental operational trends of the p6DTP‐based device, simple and advanced integrated applications can be demonstrated along with synaptic‐like responses. This effort is the first presentation of the vapor phase polymerization technique for any dithienopyrrole‐based monomers, along with the physical implementation of any memristive system as an advanced logical circuit, demonstrated here as a cascaded combinational logic gate.
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- Award ID(s):
- 1655740
- PAR ID:
- 10640937
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials Technologies
- Volume:
- 8
- Issue:
- 21
- ISSN:
- 2365-709X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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