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Abstract Hybrid photodetectors with 2D materials and quantum dots (QDs) offer new opportunities for spectral detection given their high mobilities and spectral tunability, respectively. Herein, the study presents a novel architecture of alternating PbS QDs with graphene monolayers positioned at different depths and with independent contacts. This geometry enables the probing of the photocurrent depth profile and therefore of different spectral bands. The study realizes devices with up to five graphene layers and five QD layers intercalated, using only one type of QDs (Single‐Bandgap devices) with an exciton absorption peak at 920 nm, as well as devices with different types of QDs (Multi‐Bandgap devices) with exciton peaks at 850, 1190, and 1350 nm. Since the absorption depth and photoresponse is wavelength dependent, each graphene has a different spectral response, which opens the path for spectral analysis. As expected, it is observed that top graphene layers have stronger response than deeper graphene layers, especially for short wavelengths. However, for the case of Multi‐Bandgap devices, a negative photoresponse coefficient is even observed for longer wavelengths, showing stronger response for deeper layers than for top layers. This intercalated architecture can be used for compact multispectral photodetection without any diffractive or beam splitting component. 

Photodetectors based on colloidal quantum dots (CQDs) and single layer graphene (SLG) have shown high responsivity due to the synergy of strong light absorption from CQDs and high mobility from SLG. However, it is still challenging to achieve high-density and small-footprint devices on a chip to meet the demand for their integration into electronic devices. Even though there are numerous approaches to pattern the chemically fragile CQD films, usually they require non-conventional approaches such as stamping and surface modification that may be non-compatible with semiconductor processing. In this study, we show that conventional lithography and dry etching can be used to pattern QD active films by employing a graphene monolayer passivation/protective layer that protects the surface ligands of CQDs. This protective layer avoids damage induced by lithography process solvents that deteriorate the carrier mobility of CQDs and therefore the photoresponse. Herein we report patterning of CQDs using conventional UV photolithography, achieving reproducible five-micron length PbS CQDs/SLG photodetectors with a responsivity of 10 8 A W −1 . We have also fabricated thirty-six PbS CQDs/SLG photodetectors on a single chip to establish micron size photodetectors. This process offers an approach to pattern QDs with conventional UV lithography and dry etching semiconductor technology to facilitate their integration into current semiconductor commercial technology. 

Quantum dots (QDs) offer several advantages in optoelectronics such as easy solution processing, strong light absorption and size tunable direct bandgap. However, their major limitation is their poor film mobility and short diffusion length (<250 nm). This has restricted the thickness of QD film to ∼200–300 nm due to the restriction that the diffusion length imposes on film thickness in order to keep efficient charge collection. Such thin films result in a significant decrease in quantum efficiency for λ > 700 nm in QDs photodetector and photovoltaic devices, causing a reduced photoresponsivity and a poor absorption towards the near-infrared part of the sunlight spectrum. Herein, we demonstrate 1 μm thick QDs photodetectors with intercalated graphene charge collectors that avoid the significant drop of quantum efficiency towards λ > 700 nm observed in most QD optoelectronic devices. The 1 μm thick intercalated QD films ensure strong light absorption while keeping efficient charge extraction with a quantum efficiency of 90%–70% from λ = 600 nm to 950 nm using intercalated graphene layers as charge collectors with interspacing distance of 100 nm. We demonstrate that the effect of graphene on light absorption is minimal. We achieve a time-modulation response of <1 s. We demonstrate that this technology can be implemented on flexible PET substrates, showing 70% of the original performance after 1000 times bending test. This system provides a novel approach towards high-performance photodetection and high conversion photovoltaic efficiency with quantum dots and on flexible substrates.