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The nature of structural changes of nanosecond laser modification inside silicon is investigated. Raman spectroscopy and transmission electron microscopy measurements of cross sections of the modified channels reveal highly localized crystal deformation. Raman spectroscopy measurements prove the existence of amorphous silicon inside nanosecond laser induced modifications, and the percentage of amorphous silicon is calculated based on the Raman spectrum. For the first time, the high-resolution transmission electron microscopy images directly show the appearance of amorphous silicon inside nanosecond laser induced modifications, which corroborates the indirect measurements from Raman spectroscopy. The laser modified channel consists of a small amount of amorphous silicon embedded in a disturbed crystal structure accompanied by strain. This finding may explain the origin of the positive refractive index change associated with the written channels that may serve as optical waveguides.

The concept of multi-principal component has created promising opportunities for the development of novel high-entropy ceramics for extreme environments encountered in advanced turbine engines, nuclear reactors, and hypersonic vehicles, as it expands the compositional space of ceramic materials with tailored properties within a single-phase solid solution. The unique physical properties of some high-entropy carbides and borides, such as higher hardness, high-temperature strength, lower thermal conductivity, and improved irradiation resistance than the constitute ceramics, have been observed. These promising properties may be attributed to the compositional complexity, atomic-level disorder, lattice distortion, and other fundamental processes related to defect formation and phonon scattering. This manuscript serves as a critical review of the recent progress in high-entropy carbides and borides, focusing on synthesis and evaluations of their performance in extreme high-temperature, irradiation, and gaseous environments.

Two advanced manufacturing processes, spark plasma sintering (SPS) and selective laser sintering (SLS), have been developed for synthesis of (Zr,Nb,Ta,Ti,W)C compositionally complex carbide (CCC) via reactive sintering of a powder mixture of constitute monocarbides. X‐ray diffraction analysis confirmed that the single‐phase CCC can be formed by both SPS and SLS. While a homogenous microstructure with uniform metal element distributions was developed during SPS, three‐layer microstructures with a thin TiC‐rich layer and two TaC‐rich layers along with a TiO₂‐rich surface layer containing W nanoparticles were formed during SLS. In addition, cellular structures with W, Zr, and Ti element segregation and dislocations on cell boundaries were observed in the SLS‐CCC sample, indicating the effect of nonequilibrium conditions on microstructure formation during laser melting followed by rapid cooling and solidification process. Compared to the SPS‐CCC sample, the SLS‐CCC showed enhanced hardness and reduced thermal conductivity, which may be related to their unique cellular structures.

The direct selective laser sintering (SLS) process was successfully demonstrated for additive manufacturing of high-entropy carbide ceramics (HECC), in which a Yb fiber laser was employed for ultrafast (in seconds) reactive sintering of HECC specimens from a powder mixture of constitute monocarbides. A single-phase non-equiatomic HECC was successfully formed in the 4-HECC specimen with a uniform distribution of Zr, Nb, Hf, Ta, and C. In contrast, a three-layer microstructure was formed in the 5-HECC specimen with five metal elements (Zr, Nb, Hf, Ta and Ti), consisting of a TiC-rich top layer, a Zr–Hf–C enriched intermediate layer, and a non-equiatomic Zr–Ta–Nb–Hf–C HECC layer. Vickers hardness of 4- and 5-HECC specimens were 22.2 and 21.8 GPa, respectively, on the surface. These findings have important implications on the fundamental mechanisms governing interactions between laser and monocarbide powders to form a solid solution of HECCs during SLS.

Graphical abstract

The concept for fabrication of waveguides by an in‐volume laser direct writing in single‐crystal silicon is explored using a nanosecond pulse laser. The key innovation of this technology relies on the generation of amorphous silicon, which has a higher refractive index than that of crystalline silicon. Herein, transmission electron microscopy (TEM) together with selected area electron diffraction (SAED) and high‐resolution TEM (HRTEM) characterizations are used to better understand the microstructural evolutions. TEM images reveal the core‐shell structures, while SAED patterns and HRTEM directly observe the presence of amorphous silicon in the core surrounded by a crystalline silicon shell. With a lower laser scanning speed, a higher density of defects yet less amorphous silicon is formed by laser direct writing.

As femtosecond (fs) laser machining advances from micro/nanoscale to macroscale, approaches capable of machining macroscale geometries that sustain micro/nanoscale precisions are in great demand. In this research, an fs laser sharp shaping approach was developed to address two key challenges in macroscale machining (i.e. defects on edges and tapered sidewalls). The evolution of edge sharpness (edge transition width) and sidewall tapers were systematically investigated through which the dilemma of simultaneously achieving sharp edges and vertical sidewalls were addressed. Through decreasing the angle of incidence (AOI) from 0° to −5°, the edge transition width could be reduced to below 10µm but at the cost of increased sidewall tapers. Furthermore, by analyzing lateral and vertical ablation behaviors, a parameter-compensation strategy was developed by gradually decreasing the scanning diameters along depth and using optimal laser powers to produce non-tapered sidewalls. The fs laser ablation behaviors were precisely controlled and coordinated to optimize the parameter compensations in general manufacturing applications. The AOI control together with the parameter compensation provides a versatile solution to simultaneously achieve vertical sidewalls as well as sharp edges of entrances and exits for geometries of different shapes and dimensions. Both mm-scale diameters and depths were realized with dimensional precisions below 10µm and surface roughness below 1µm. This research establishes a novel strategy to finely control the fs laser machining process, enabling the fs laser applications in macroscale machining with micro/nanoscale precisions.