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Abstract Ferroelectricity was long considered incompatible with the wurtzite structure, but the recent discovery of switchable polarization in wurtzite alloys has renewed interest in these materials for integrated electronic and memory applications. The development of wurtzite ferroelectrics faces significant technological challenges, which can be addressed through a fundamental physical understanding of their dielectric and ferroelectric properties. This article focuses on the physics that govern the polarization switching behavior, emphasizing the atomic- and meso-scale (domain) mechanisms involved in the transition between polarization states. A distinguishing feature of this article is a deep dive into the role of intrinsic and extrinsic defects—an area that has received limited attention in prior reviews, but is increasingly recognized as central to polarization switching, coercive fields, leakage, and fatigue. We highlight how defect behavior evolves during processing and electrical cycling, often contributing to long-term degradation. We also introduce powerful first-principles defect calculations, common in semiconductors but not yet widespread in ferroelectrics, as tools to understand and design materials. By integrating recent theoretical and experimental insights, we aim to provide a framework for advancing wurtzite ferroelectrics. Graphical abstract 

Highly alloyed (Al,Gd)N is of potential interest in a variety of applications, including neutron detection and in devices such as non-volatile memory. Gd has been shown to have very low equilibrium solubility in AlN at room temperature; however, non-equilibrium deposition techniques such as sputtering are able to deposit thin films, which incorporate large amounts of Gd. Here, we characterize a highly-alloyed (Al,Gd)N combinatorial thin film grown by RF sputtering on a GaN substrate, looking for any evidence of chemical or phase segregation or structural disorder in the films. Compositions with between 13% and 32% Gd (on a cation basis) were studied. No evidence was found for chemical or phase segregation in any studied composition. Higher degrees of Gd incorporation led to greater structural disorder in the film and a tendency toward amorphization; however, electron diffraction shows that the film does not become fully amorphous at any of the studied compositions, instead retaining textured local order even at 32% Gd. Electron energy loss spectra suggest that the material retains a locally wurtzite-like tetrahedral bonding environment at all studied compositions. 

Wurtzite $(\mathrm{Al},\mathrm{Sc})\mathrm{N}$ ferroelectrics are attractive for microelectronics applications due to their chemical and structural compatibility with wurtzite semiconductors, such as $\mathrm{Ga}\mathrm{N}$ and $(\mathrm{Al},\mathrm{Ga})\mathrm{N}$ . However, the leakage current in epitaxial stacks reported to date should be reduced for reliable device operation. Here, we demonstrate low leakage current in epitaxial ${\mathrm{Al}}_{0.7}{\mathrm{Sc}}_{0.3}\mathrm{N}$ films on $\mathrm{Ga}\mathrm{N}$ with well-saturated ferroelectric hysteresis loops that are orders of magnitude lower (i.e., 0.07 A ${\mathrm{cm}}^{-2}$ ) than previously reported films (1–19 A ${\mathrm{cm}}^{-2}$ ) having similar or better structural characteristics. We also show that, for these high-quality epitaxial $(\mathrm{Al},\mathrm{Sc})\mathrm{N}$ films, structural quality (edge and screw dislocations), as measured by diffraction techniques, is not the dominant contributor to leakage. Instead, the small leakage in our films is limited by thermionic emission across the interfaces, which is distinct from the large leakage due to trap-mediated bulk transport in the previously reported $(\mathrm{Al},\mathrm{Sc})\mathrm{N}$ films. To support this conclusion, we show that ${\mathrm{Al}}_{0.7}{\mathrm{Sc}}_{0.3}\mathrm{N}$ on lattice-matched ${\mathrm{In}}_{0.18}{\mathrm{Ga}}_{0.82}\mathrm{N}$ buffers with improved structural characteristics but higher interface roughness exhibit increased leakage characteristics. This demonstration of low leakage current in heteroepitaxial $(\mathrm{Al},\mathrm{Sc})\mathrm{N}$ films and understanding of the importance of interface barrier and surface roughness can guide further efforts toward improving the reliability of wurtzite ferroelectric devices. Published by the American Physical Society2025 

The solid-state synthesis of perovskite BiFeO3 has been a topic of interest for decades. Many studies have reported challenges in the synthesis of BiFeO3 from starting oxides of Bi2O3 and Fe2O3, mainly associated with the development of persistent secondary phases such as Bi25FeO39 (sillenite) and Bi2Fe4O9 (mullite). These secondary phases are thought to be a consequence of unreacted Fe-rich and Bi-rich regions, that is, incomplete interdiffusion. In the present work, in situ high-temperature X-ray diffraction is used to demonstrate that Bi2O3 first reacts with Fe2O3 to form sillenite Bi25FeO39, which then reacts with the remaining Fe2O3 to form BiFeO3. Therefore, the synthesis of perovskite BiFeO3 is shown to occur via a two-step reaction sequence with Bi25FeO39 as an intermediate compound. Because Bi25FeO39 and the γ-Bi2O3 phase are isostructural, it is difficult to discriminate them solely from X-ray diffraction. Evidence is presented for the existence of the intermediate sillenite Bi25FeO39 using quenching experiments, comparisons between Bi2O3 behavior by itself and in the presence of Fe2O3, and crystal structure examination. With this new information, a proposed reaction pathway from the starting oxides to the product is presented. 

Abstract The solid‐state synthesis of perovskite BiFeO₃has been a topic of interest for decades. Many studies have reported challenges in the synthesis of BiFeO₃from starting oxides of Bi₂O₃and Fe₂O₃, mainly associated with the development of persistent secondary phases such as Bi₂₅FeO₃₉(sillenite) and Bi₂Fe₄O₉(mullite). These secondary phases are thought to be a consequence of unreacted Fe‐rich and Bi‐rich regions, that is, incomplete interdiffusion. In the present work, in situ high‐temperature X‐ray diffraction is used to demonstrate that Bi₂O₃first reacts with Fe₂O₃to form sillenite Bi₂₅FeO₃₉, which then reacts with the remaining Fe₂O₃to form BiFeO₃. Therefore, the synthesis of perovskite BiFeO₃is shown to occur via a two‐step reaction sequence with Bi₂₅FeO₃₉as an intermediate compound. Because Bi₂₅FeO₃₉and the γ‐Bi₂O₃phase are isostructural, it is difficult to discriminate them solely from X‐ray diffraction. Evidence is presented for the existence of the intermediate sillenite Bi₂₅FeO₃₉using quenching experiments, comparisons between Bi₂O₃behavior by itself and in the presence of Fe₂O₃, and crystal structure examination. With this new information, a proposed reaction pathway from the starting oxides to the product is presented. 

Global health challenges, including the continued discovery of new antibiotic resistant bacteria strains, hospital-acquired infections, and transmission of both endemic and novel diseases (e.g., COVID-19) motivate the need for large-scale access to surfaces capable of self-sterilization. Among the most promising methods for such applications, antimicrobial photodynamic inactivation (aPDI) utilizes the visible light illumination of a light absorbing material to produce reactive oxygen species to inflict non-specific oxidative damage to pathogens. Unfortunately, these techniques can suffer from challenges, including photosensitizer instability at elevated temperatures (which limits the available processing methods), and photobleaching under prolonged light exposure. In this work, we present a facile and scalable hydrolysis-based route for the synthesis of copper-doped titania (TiO2) particles for highly effective light-activated antiviral and antibacterial applications. The performance of the synthesized Cu-doped TiO2 particles is then evaluated using solution-phase antimicrobial photodynamic inactivation assays. We demonstrate that the Cu-doped TiO2 particles can successfully inactivate a wide range of pathogens with exposure to light for 90 min, including bacteria ranging from methicillin-resistant Staphylococcus aureus (99.9999%, ~6 log units) to Klebsiella pneumoniae (99.93%, ~3.3 log units), and viruses including feline calicivirus (99.94%, ~3.4 log units) and HCoV-229E (99.996%, ~4.6 log units), with the particles demonstrating excellent robustness towards photobleaching. Furthermore, a spray-coated polymer film, loaded with the synthesized Cu-doped TiO2 particles achieves inactivation of methicillin-resistant Staphylococcus aureus up to 99.998% (~4.8 log units). The presented results provide a clear advance forward in the use of metal-doped titania for aPDI applications, including the scalable synthesis (kg/day) of well-characterized and robust particles, their facile incorporation into a non-toxic, photo-stable coating that may be easily and cheaply applied to a multitude of surfaces, and a broad efficacy against drug-resistant Gram-positive and Gram-negative bacteria, as well as against enveloped and non-enveloped viruses.