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Here, a thorough study of the effects of multiple stressors on a series of FAMACsPb(IBr)3 solar cells was assessed to test the stability of such systems for space applications. Combinations of thermal cycling, constant illumination, and electric field during the temperature ramp were all investigated. In all cases, some degradation of the solar cells was apparent, which was nearly reversible in the case of protocol 1 (thermal) and protocol 2 (thermal with illumination). However, under protocols 3 and 4 (thermal, illumination, and variable electric field), the devices did not return to initial conditions, suggesting possible irreversible degradation. An evaluation of device parameters: short circuit current density (Jsc), fill factor (FF), and open circuit voltage (Voc) shows that the Jsc is the least affected parameter [T = 450 K, remaining factors Jsc(T)/Jsc(300 K) ≥ 94%] regardless of protocol. For all protocols, the remaining factors at T = 450 K were 85%–90% and 78%–85% for FF and Voc, respectively. Under protocol 4 (practical solar cell operation), the FF and Voc behavior lags behind that of protocols 1 and 2 until T > 420 K. Overall, the results indicate that metal halide perovskite solar cells have potential for space power applications, as the device’s remaining factors were ≥90% for protocols 4, 2, and 1 for T ≤ 380, 400, and 420 K, respectively. With regard to CubeSat missions testing metal halide perovskites by applying a controlled voltage (V = 0.001 V) between measurements (protocol 2), particularly when the device is idle, degradation from combined stressors can be mitigated, reducing the risk of irreversible damage. 

Abstract Here, the radiation hardness of metal halide perovskite solar cells exposed to space conditions versus the effects of environmental degradation are assessed. The relative response of the constituent layers of the architecture to radiation is analyzed, revealing a general resilience of the structure when assessed across varying proton energy levels and fluences. However, despite the tolerance of the structure to irradiation, sensitivity to environmental degradation is observed during the transit of the device between the radiation and characterization facilities. Experimental evidence suggests the NiO_x/perovskite interface is particularly sensitive to the effects of humidity and/or temperature exposure, while the irradiation of the devices appears to induce thermally activated annealing: improving the solar cells upon radiation exposure. 

We report on an examination of mobile ion concentration (N₀) in perovskite solar cells (PSCs) as a function of temperature and device architecture. 

This paper discusses the in-situ characterization tools designed to assess radiation tolerance and elemental migration in perovskite materials. With the increasing use of perovskites in various technological applications, understanding their response to radiation exposure is paramount. Ion Beam Induced Charge (IBIC) emerges as a powerful tool for investigating the radiation tolerance of perovskites at the microscale. By employing focused ion beams, IBIC allows for the spatial mapping of charge carriers, offering insights into the material's electronic response to radiation-induced defects. This technique enables researchers to pinpoint areas of enhanced or suppressed charge collection, providing valuable information on the perovskite's intrinsic properties under irradiation. Rutherford Backscattering Spectrometry (RBS) complements the study by offering a quantitative analysis of elemental migration in perovskite materials. Through the precise measurement of backscattered ions, RBS provides a detailed understanding of the elemental composition and distribution within the perovskite lattice after radiation exposure. The integration of IBIC and RBS techniques in in-situ experiments enhances the comprehensive characterization of radiation effects on perovskites. 

ACIGS solar cells are exposed to targeted radiation to probe the front and back interfaces of the absorber to assess the impact of space environments on these systems. These data suggest ACIGS cells are more radiation‐hard than early CIGS devices likely due to the lower defect densities and more ideal interfaces in the ACIGS system. A combination ofJ–Vand external quantum efficiency measurements indicates some improvement in the performance of the device due to the effects of local heating in the dominant ionizing electronic energy loss regime of proton irradiation that anneal the upper CdS/ACIGS interface. However, nonionizing energy losses at the base of the solar cell also appear to inhibit minority carrier collection from the back of the cell at the ACIGS/Mo interface, which is discussed in terms of defect‐mediated changes in the doping profile, the Ga/Ga+In ratio, and impurity composition after proton irradiation. 

While the low-energy side of the ΔAcurves remains stable over time, the high-energy side changes dramatically, reflecting hot carrier thermalization, which occurs at different rates on the hole and electron transport sides in perovskite solar cells.