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Phase transition between different polymorphs of two-dimensional (2D) transition metal dichalcogenides is of great interest for the development of nanoelectronics and optoelectronics. Here, we report the visualization of laser-driven 2H-to-1T′ phase transition in few-layer molybdenum ditelluride (MoTe2) nanosheets by microwave impedance microscopy. The region after intense illumination exhibits clear Raman signatures of the 1T′ phase, as well as much higher local conductance than the untreated area. Moreover, the semiconducting 2H region displays strong photoresponse, whereas the metallic 1T′ region shows little photoconductivity. The spatially resolved information is important for correlating electrical and structural properties in functional 2D materials. 

Two-dimensional (2D) materials offer a valuable platform for manipulating and studying chemical reactions at the atomic level, owing to the ease of controlling their microscopic structure at the nanometer scale. While extensive research has been conducted on the structure-dependent chemical activity of 2D materials, the influence of structural transformation during the reaction has remained largely unexplored. In this work, we report the layer-dependent chemical reactivity of MoS2 during a nitridation atomic substitution reaction and attribute it to the rearrangement of Mo atoms. Our results show that the chemical reactivity of MoS2 decreases as the number of layers is reduced in the few-layer regime. In particular, monolayer MoS2 exhibits significantly lower reactivity compared with its few-layer and multilayer counterparts. Atomic-resolution transmission electron microscopy (TEM) reveals that MoN nanonetworks form as reaction products from monolayer and bilayer MoS2, with the continuity of the MoN crystals increasing with layer number, consistent with the local conductivity mapping data. The layer-dependent reactivity is attributed to the relative stability of the hypothetically formed MoN phase, which retains the number of Mo atomic layers present in the precursor. Specifically, the low chemical reactivity of monolayer MoS2 is attributed to the high energy cost associated with Mo atom diffusion and migration necessary to form multilayer Mo lattices in the thermodynamically stable MoN phase. This study underscores the critical role of lattice rearrangement in governing chemical reactivity and highlights the potential of 2D materials as versatile platforms for advancing the understanding of materials chemistry at the atomic scale. 

We report the nonvolatile modulation of microwave conductivity in ferroelectric PbZr0.2Ti0.8O3-gated ultrathin LaNiO3/La0.67Sr0.33MnO3 correlated oxide channel visualized by microwave impedance microscopy. Polarization switching is obtained by applying a tip bias above the coercive voltage of the ferroelectric layer. The microwave conductivity of the correlated channel underneath the up- and down-polarized domains has been quantified by finite-element analysis of the tip-sample admittance. At room temperature, a resistance on/off ratio above 100 between the two polarization states is sustained at frequencies up to 1 GHz, which starts to drop at higher frequencies. The frequence-dependence suggests that the conductance modulation originates from ferroelectric field-effect control of carrier density. The modulation is nonvolatile, remaining stable after 6 months of domain writing. Our work is significant for potential applications of oxide-based ferroelectric field-effect transistors in high-frequency nanoelectronics and spintronics. 

Abstract A synaptic memristor using 2D ferroelectric junctions is a promising candidate for future neuromorphic computing with ultra‐low power consumption, parallel computing, and adaptive scalable computing technologies. However, its utilization is restricted due to the limited operational voltage memory window and low on/off current (I_ON/OFF) ratio of the memristor devices. Here, it is demonstrated that synaptic operations of 2D In₂Se₃ferroelectric junctions in a planar memristor architecture can reach a voltage memory window as high as 16 V (±8 V) and I_ON/OFFratio of 10⁸, significantly higher than the current literature values. The power consumption is 10⁻⁵ W at the on state, demonstrating low power usage while maintaining a large I_ON/OFFratio of 10⁸compared to other ferroelectric devices. Moreover, the developed ferroelectric junction mimicked synaptic plasticity through pulses in the pre‐synapse. The nonlinearity factors are obtained 1.25 for LTP, −0.25 for LTD, respectively. The single‐layer perceptron (SLP) and convolutional neural network (CNN) on‐chip training results in an accuracy of up to 90%, compared to the 91% in an ideal synapse device. Furthermore, the incorporation of a 3 nm thick SiO₂interface between the α‐In₂Se₃and the Au electrode resulted in ultrahigh performance among other 2D ferroelectric junction devices to date. 

Abstract Implementing microelectromechanical system (MEMS) resonators calls for detailed microscopic understanding of the devices, such as energy dissipation channels, spurious modes, and imperfections from microfabrication. Here, we report the nanoscale imaging of a freestanding super-high-frequency (3 – 30 GHz) lateral overtone bulk acoustic resonator with unprecedented spatial resolution and displacement sensitivity. Using transmission-mode microwave impedance microscopy, we have visualized mode profiles of individual overtones and analyzed higher-order transverse spurious modes and anchor loss. The integrated TMIM signals are in good agreement with the stored mechanical energy in the resonator. Quantitative analysis with finite-element modeling shows that the noise floor is equivalent to an in-plane displacement of 10 fm/√Hz at room temperatures, which can be further improved under cryogenic environments. Our work contributes to the design and characterization of MEMS resonators with better performance for telecommunication, sensing, and quantum information science applications. 

The research on two-dimensional (2D) van der Waals ferroelectrics has grown substantially in the last decade. These layered materials differ from conventional thin-film oxide ferroelectrics in that the surface and interface are free from dangling bonds. Some may also possess uncommon properties, such as bandgap tunability, mechanical flexibility, and high carrier mobility, which are desirable for applications in nanoelectronics and optoelectronics. This Tutorial starts by reviewing the theoretical tools in 2D ferroelectric studies, followed by discussing the material synthesis and sample characterization. Several prototypical electronic devices with innovative functionalities will be highlighted. Readers can use this article to obtain a basic understanding of the current status, challenges, and future prospects of 2D ferroelectric materials. 

We report the implementation of a dilution refrigerator-based scanning microwave impedance microscope with a base temperature of ∼100 mK. The vibration noise of our apparatus with tuning-fork feedback control is as low as 1 nm. Using this setup, we have demonstrated the imaging of quantum anomalous Hall states in magnetically (Cr and V) doped (Bi, Sb)2Te3 thin films grown on mica substrates. Both the conductive edge modes and topological phase transitions near the coercive fields of Cr- and V-doped layers are visualized in the field-dependent results. Our study establishes the experimental platform for investigating nanoscale quantum phenomena at ultralow temperatures. 

Abstract Guided elastic waves are a truly cross-disciplinary key enabling technology. For more than five decades, surface acoustic wave (SAW) and bulk acoustic wave devices find widespread applications. Nowadays, different types of guided elastic waves cover the wide spectrum of applications spanning from quantum technologies to the life sciences, from controlling single excitations to macroscopic collective states in condensed matter. Six years after the first 2019 SAW roadmap, we believe it is time to make a step back and take a fresh look at the status of the field and its future challenges. Since the first roadmap in 2019, the spectrum clearly expanded and this new edition presents a current snapshot of the status of this vibrant field and prospects for potential future developments.