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Efficient electrical doping of organic semiconductors relies on identifying appropriate molecular dopants that are capable of ionizing semiconductor molecules with a high yield, thereby creating mobile charges. We explore the suitability of two different material parameters to predict ion pair formation for different sets of semiconductor–dopant combinations: (i) redox-potentials measured by cyclic voltammetry in solution and (ii) ionization energy (IE)/electron affinity (EA) measured on thin films by ultraviolet/inverse photoelectron spectroscopy. Our study suggests, at least for molecular semiconductors and dopants, that redox-potentials are better suited to identify matching material pairs and their ion pair formation yield than IE/EA values. This is ascribed to the dependence of IE/EA values on molecular orientation and film structure on and above the meso-scale. In contrast, cyclic voltammetry measurements, although performed on solutions rather than on thin films, capture dopant–semiconductor energy levels on the molecular scale, which is more relevant for doping even in the case of solid thin films. 

Abstract We report a facile synthesis of diindeno‐fused dibenzo[a,h]anthracene derivatives (DIDBA‐2Cl,DIDBA‐2Ph, andDIDBA‐2H)with different degrees of non‐planarity using three substituents (chloro, phenyl, and hydrogen) of various sizes. The planarization of their cores, as evidenced by the decreased end‐to‐end torsional angles, was confirmed by X‐ray crystallography. Their enhanced energy gaps with twisting were investigated by a combination of spectroscopic and electrochemical methods with density functional theory, which showed a transition from singlet open‐shell to closed‐shell configuration. Moreover, their doubly reduced states,DIDBA‐2Ph²⁻andDIDBA‐2H²⁻, were achieved by chemical reduction. The structures of dianions were identified by X‐ray crystallographic analysis, which elucidated that the electron charging further distorted the backbones. The electronic structure of the dianions was demonstrated by experimental and theoretical approaches, suggesting decreased energy gaps with larger non‐planarity, different from the neutral species. 

Abstract Chemical reduction of OBO‐fused double[5]helicene with Group 1 metals (Na and K) has been investigated for the first time. Two doubly‐reduced products have been isolated and structurally characterized by single‐crystal X‐ray diffraction, revealing a solvent‐separated ion triplet (SSIT) with Na⁺ions and a contact‐ion pair (CIP) with K⁺ion. As the key structural outcome, the X‐ray crystallographic analysis discloses the consequences of adding two electrons to the double helicene core in the SSIT without metal binding and reveals the preferential binding site in the CIP with K⁺counterions. In both products, an increase in the twisting of the double helicene core upon charging was observed. The negative charge localization at the central core has been identified by theoretical calculations, which are in full agreement with X‐ray crystallographic and NMR spectroscopic results. Notably, it was confirmed that the two‐electron reduction of OBO‐fused double[5]helicene is reversible. 

Abstract Chemical reduction of a benzo‐fused double [7]helicene (1) with two alkali metals, K and Rb, provided access to three different reduced states of1. The doubly‐reduced helicene1²⁻has been characterized by single‐crystal X‐ray diffraction as a solvent‐separated ion triplet with two potassium counterions. The triply‐ and tetra‐reduced helicenes,1³⁻and1⁴⁻, have been crystallized together in an equimolar ratio and both form the contact‐ion complexes with two Rb⁺ions each, leaving three remaining Rb⁺ions wrapped by crown ether and THF molecules. As structural consequence of the stepwise reduction of1, the central axis of helicene becomes more compressed upon electron addition (1.42 Å in1⁴⁻vs. 2.09 Å in1). This is accompanied by an extra core twist, as the peripheral dihedral angle increases from 16.5° in1to 20.7° in1⁴⁻. Theoretical calculations provided the pattern of negative charge build‐up and distribution over the contorted helicene framework upon each electron addition, and the results are consistent with the X‐ray crystallographic and NMR spectroscopic data. 

Abstract The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom‐up fabrication based on molecular precursors. This approach offers a unique platform for all‐carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, the growth, characterization, and device integration of 5‐atom wide armchair GNRs (5‐AGNRs) are studied, which are expected to have an optimal bandgap as active material in switching devices. 5‐AGNRs are obtained via on‐surface synthesis under ultrahigh vacuum conditions from Br‐ and I‐substituted precursors. It is shown that the use of I‐substituted precursors and the optimization of the initial precursor coverage quintupled the average 5‐AGNR length. This significant length increase allowed the integration of 5‐AGNRs into devices and the realization of the first field‐effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub‐nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.