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Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and augmented reality glasses. Here, we report the first achievement of an all-epitaxial, distributed Bragg reflector (DBR)–free electrically injected surface-emitting green laser by exploiting the photonic band edge modes formed in dislocation-free gallium nitride nanocrystal arrays, instead of using conventional DBRs. The device operates at ~523 nm and exhibits a threshold current of ~400 A/cm 2 , which is over one order of magnitude lower compared to previously reported blue laser diodes. Our studies open a new paradigm for developing low-threshold surface-emitting laser diodes from the ultraviolet to the deep visible (~200 to 600 nm), wherein the device performance is no longer limited by the lack of high-quality DBRs, large lattice mismatch, and substrate availability.

Photocatalytic water splitting is a wireless method for solar-to-hydrogen conversion. To date, however, the efficiency of photocatalytic water splitting is still very low. Here, we have investigated the design, synthesis, and characterization of quadruple-band InGaN nanowire arrays, which consist of In 0.35 Ga 0.65 N, In 0.27 Ga 0.73 N, In 0.20 Ga 0.80 N, and GaN segments, with energy bandgaps of ∼2.1 eV, 2.4 eV, 2.6 eV, and 3.4 eV, respectively. Such multi-band InGaN nanowire arrays are integrated directly on a nonplanar wafer for enhanced light absorption. Moreover, a doping gradient is introduced along the lateral dimension of the nanowires, which forms a built-in electric field and promotes efficient charge carrier separation and extraction for water redox reactions. We have demonstrated that the quadruple-band InGaN nanowire photocatalyst can exhibit a solar-to-hydrogen efficiency of ∼5.2% with relatively stable operation. This work demonstrates a novel strategy using multi-band semiconductor nanostructures for artificial photosynthesis and solar fuel conversion with significantly improved performance.