Search for: All records

Abstract Strain modulation is a crucial way in engineering nanoscale materials. It is even more important for single photon emitters in layered materials, where strain can trap a delocalized exciton, leading to quantum emission. Herein, we apply strain by using the piezoelectric relaxor ferroelectric substrate. In addition to the strain-tuning of energy and polarization, we report on new observations, including the enhanced polarizability and tunable diamagnetic shift, from the charged localized excitons. As indicated from the polarization-resolved measurements, we attribute the formation of charged localized excitons to selenium vacancy defects. The shallow defect trap, supported by the value of g-factor, further allows for strain-modulation of the electron-hole overlap, hence resulting in the tunable diamagnetic shift. Our results provide a new perspective in integrating layered materials with functional substrates. The contrasting features observed from the charged localized excitons also signify the prospect of charged localized emitters for quantum science and technology. 

We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene. Despite the nominally-symmetric tunnel-junction structure, these devices can exhibit substantial electroresistance upon reversing the ferroelectric polarization. The magnitude and sign of tunneling electroresistance are tunable by bias and gate voltage. We show that this behavior can be understood within a simple tunneling model that takes into account the quantum capacitance of the graphene electrodes, so that the tunneling densities of states in the electrodes are separately modified as a function of bias and gate voltage. 

Abstract Twisted transition metal dichalcogenide (TMD) bilayers have enabled the discovery of superconductivity, ferromagnetism, correlated insulators, and a series of new topological phases of matter. However, the connection between these electronic phases of matter and the underlying band structure singularities has remained largely unexplored. Here, combining magnetic circular dichroism and exciton sensing measurements, we investigate the influence of a van Hove singularity (vHS) on the correlated phases in bilayer WSe₂with twist angle between 2 and 3 degrees. By tuning the vHS across the Fermi level using electric and magnetic fields, we observe Stoner ferromagnetism below moiré lattice filling one and Chern insulators at filling one. The experimental observations are supported by the continuum model band structure calculations. Our results highlight the prospect of engineering electronic phases of matter in moiré materials by tunable van Hove singularities. 

Abstract AB-stacked bilayer graphene has emerged as a fascinating yet simple platform for exploring macroscopic quantum phenomena of correlated electrons. Under large electric displacement fields and near low-density van-Hove singularities, it exhibits a phase with features consistent with Wigner crystallization, including negative dR/dT and nonlinear bias behavior. However, direct evidence for the emergence of an electron crystal at zero magnetic field remains elusive. Here, we explore low-frequency noise consistent with depinning and sliding of a Wigner crystal or solid. At large magnetic fields, we observe enhanced noise at low bias current and a frequency-dependent response characteristic of depinning and sliding, consistent with earlier scanning tunnelling microscopy studies confirming Wigner crystallization in the fractional quantum Hall regime. At zero magnetic field, we detect pronounced AC noise whose peak frequency increases linearly with applied DC current—indicative of collective electron motion. These transport signatures pave the way toward confirming an anomalous Hall crystal. 

Abstract Quantum coherent effects can be probed in multilayer graphene through electronic transport measurements at low temperatures. In particular, bilayer graphene (BLG) is known to be susceptible to quantum interference corrections of the conductivity, presenting weak localization at all electronic densities, and dependent on different scattering mechanisms such as those related to the trigonal warping of the electron dispersion near the K and K′ valleys. Proximity effects with a molecular thin film influence these scattering mechanisms, which can be quantified through the known theory of magnetoconductance for BLG. Here, we present electronic transport measurements in a copper-phthalocyanine (CuPc) / BLG / hexagonal boron nitride (h-BN) heterostructure that suggest the restoration of weak localization in BLG, associated to a reduction of trigonal warping effects, that are known to suppress weak localization in BLG. Additionally, we observe a charge transfer of 3.6×10¹²cm⁻²from the BLG to the molecules, as well as a very small degradation of the mobility of the BLG/h-BN heterostructure upon the deposition of CuPc. The molecular arrangement of the CuPc thin film is characterized in a control sample through transmission electron microscopy, that we relate to the electronic transport results. 

Bose-Fermi mixtures can be realized in semiconductor heterostructures, with bosons as excitons and fermions as dopant charges. However, the complexity of these hybrid systems challenges understanding of the mechanisms that determine properties such as mobility. We investigated interlayer exciton diffusion in tungsten diselenide–tungsten disulfide heterobilayers at ultralow exciton density and low temperatures to examine how charges affect exciton mobility. Near the electronic Mott insulator phase, we observed a giant thousand-fold enhancement of exciton diffusion relative to charge neutrality. We attribute this to mobile valence holes, which experienced a suppressed moiré potential due to charge order and recombined nonmonogamously with conduction electrons. Our results show exciton diffusion as a probe of correlated electron states and Bose-Fermi interplay.