Ultrathin (1–4 nm) films of wide-bandgap semiconductors are important to many applications in microelectronics, and the film properties can be sensitively affected by defects especially at the substrate/film interface. Motivated by this, an in vacuo atomic layer deposition (ALD) was developed for the synthesis of ultrathin films of Ga2O3/Al2O3 atomic layer stacks (ALSs) on Al electrodes. It is found that the Ga2O3/Al2O3 ALS can form an interface with the Al electrode with negligible interfacial defects under the optimal ALD condition whether the starting atomic layer is Ga2O3 or Al2O3. Such an interface is the key to achieving an optimal and tunable electronic structure and dielectric properties in Ga2O3/Al2O3 ALS ultrathin films. In situ scanning tunneling spectroscopy confirms that the electronic structure of Ga2O3/Al2O3 ALS can have tunable bandgaps (Eg) between ∼2.0 eV for 100% Ga2O3 and ∼3.4 eV for 100% Al2O3. With variable ratios of Ga:Al, the measured Eg exhibits significant non-linearity, agreeing with the density functional theory simulation, and tunable carrier concentration. Furthermore, the dielectric constant ε of ultrathin Ga2O3/Al2O3 ALS capacitors is tunable through the variation in the ratio of the constituent Ga2O3 and Al2O3 atomic layer numbers from 9.83 for 100% Ga2O3 to 8.28 for 100% Al2O3. The high ɛ leads to excellent effective oxide thickness ∼1.7–2.1 nm for the ultrathin Ga2O3/Al2O3 ALS, which is comparable to that of high-K dielectric materials.
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Free, publicly-accessible full text available July 14, 2025
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Colloidal quantum dots/graphene (QD/Gr) nanohybrids have been studied intensively for photodetection in a broadband spectrum including ultraviolet, visible, near-infrared, and shortwave infrared (UV−vis-NIR-SWIR). Since the optoelectronic process in the QD/Gr nanohybrid relies on the photogenerated charge carrier transfer from QDs to graphene, understanding the role of the QD−QD and QD−Gr interfaces is imperative to the QD/Gr nanohybrid photodetection. Herein, a systematic study is carried out to probe the effect of these interfaces on the noise, photoresponse, and specific detectivity in the UV−vis-NIR-SWIR spectrum. Interestingly, the photoresponse has been found to be negligible without a 3-mercaptopropionic acid (MPA) ligand exchange, moderate with a single ligand exchange after all QD layers are deposited on graphene, and maximum if it is performed after each QD layer deposition up to five layers of total QD thickness of 260−280 nm. Furthermore, exposure of graphene to C-band UV (UVC) for a short period of 4−5 min before QD deposition leads to improved photoresponse via removal of polar molecules at the QD/Gr interface. With the combination of the MPA ligand exchange and UVC exposure, optimal optoelectronic properties can be obtained on the PbS QD/Gr nanohybrids with high specific detectivity up to 2.6 × 1011, 1.5 × 1011, 5 × 1010, and 1.9 × 109 Jones at 400, 550, 1000, and 1700 nm, respectively, making the nanohybrids promising for broadband photodetection.more » « lessFree, publicly-accessible full text available April 9, 2025
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Abstract Ultrathin (sub-2 nm) Al2O3/MgO memristors were recently developed using an
in vacuo atomic layer deposition (ALD) process that minimizes unintended defects and prevents undesirable leakage current. These memristors provide a unique platform that allows oxygen vacancies (VO) to be inserted into the memristor with atomic precision and study how this affects the formation and rupture of conductive filaments (CFs) during memristive switching. Herein, we present a systematic study on three sets of ultrathin Al2O3/MgO memristors with VO-doping via modular MgO atomic layer insertion into an otherwise pristine insulating Al2O3atomic layer stack (ALS) using anin vacuo ALD. At a fixed memristor thickness of 17 Al2O3/MgO atomic layers (∼1.9 nm), the properties of the memristors were found to be affected by the number and stacking pattern of the MgO atomic layers in the Al2O3/MgO ALS. Importantly, the trend of reduced low-state resistance and the increasing appearance of multi-step switches with an increasing number of MgO atomic layers suggests a direct correlation between the dimension and dynamic evolution of the conducting filaments and the VOconcentration and distribution. Understanding such a correlation is critical to an atomic-scale control of the switching behavior of ultrathin memristors. -
Surface-enhanced Raman spectroscopy (SERS) is an important analytical tool with ultrahigh sensitivity that depends on electromagnetic mechanism (EM) and chemical mechanism (CM). The CM relies on efficient charge transfer between the probe molecules and SERS substrates, which means engineering the molecule attachment and the energy level alignment at the molecule/substrate interface is critical to optimal CM enhancement. Herein, we report enhanced CM of Rhodamine 6G (R6G) on graphene SERS substrates using combined C-band ultraviolet (UVC) irradiation and Pt nanoparticle (Pt-NPs) decoration using atomic layer deposition (ALD). An enhancement of 270% was obtained in the former, which is ascribed to the graphene surface activation and p-doping on graphene for improved R6G molecule attachment and charge transfer by its surface change from hydrophobic to hydrophilic and the down-shift of the Fermi energy (p-doping) after UVC exposure. The Pt-NPs decoration adds an additional enhancement of 250% by further p-doping graphene, which shifts the graphene’s Fermi energy to promote charge (hole) transfer at the R6G/graphene interface. Remarkably, the combination of the UVC irradiation and Pt-NPs decoration has led to enhanced R6G SERS sensitivity of 5 × 10−9 M, which represents a two-orders of magnitude enhancement over that on the pristine graphene and illustrates the importance of graphene engineering for optimal probe molecule attachment and the energy level alignment at the molecule/graphene interface toward achieving high-performance SERS biosensing.more » « less
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Abstract In the carbon nanotubes film/graphene heterostructure decorated with catalytic Pt nanoparticles using atomic layer deposition (Pt-NPs/CNTs/Gr) H 2 sensors, the CNT film determines the effective sensing area and the signal transport to Gr channel. The former requires a large CNT aspect ratio for a higher sensing area while the latter demands high electric conductivity for efficient charge transport. Considering the CNT’s aspect ratio decreases, while its conductivity increases ( i.e. , bandgap decreases), with the CNT diameter, it is important to understand how quantitatively these effects impact the performance of the Pt-NPs/CNTs/Gr nanohybrids sensors. Motivated by this, this work presents a systematic study of the Pt-NPs/CNTs/Gr H 2 sensor performance with the CNT films made from different constituent CNTs of diameters ranging from 1 nm for single-wall CNTs, to 2 nm for double-wall CNTs, and to 10–30 nm for multi-wall CNTs (MWCNTs). By measuring the morphology and electric conductivity of SWCNT, DWCNT and MWCNT films, this work aims to reveal the quantitative correlation between the sensor performance and relevant CNT properties. Interestingly, the best performance is obtained on Pt-NPs/MWCNTs/Gr H 2 sensors, which can be attributed to the compromise of the effective sensing area and electric conductivity on MWCNT films and illustrates the importance of optimizing sensor design.more » « less
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Abstract Continuous device downsizing and circuit complexity have motivated atomic-scale tuning of memristors. Herein, we report atomically tunable Pd/M1/M2/Al ultrathin (<2.5 nm M1/M2 bilayer oxide thickness) memristors using in vacuo atomic layer deposition by controlled insertion of MgO atomic layers into pristine Al2O3atomic layer stacks guided by theory predicted Fermi energy lowering leading to a higher high state resistance (HRS) and a reduction of oxygen vacancy formation energy. Excitingly, memristors with HRS and on/off ratio increasing exponentially with M1/M2 thickness in the range 1.2–2.4 nm have been obtained, illustrating tunneling mechanism and tunable on/off ratio in the range of 10–104. Further dynamic tunability of on/off ratio by electric field is possible by designing of the atomic M2 layer and M1/M2 interface. This result probes ways in the design of memristors with atomically tunable performance parameters.
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Nanohybrids of graphene and two-dimensional (2D) layered transition metal dichalcogenides (TMD) nanostructures can provide a promising substrate for extraordinary surface-enhanced Raman spectroscopy (SERS) due to the combined electromagnetic enhancement on TMD nanostructures via localized surface plasmonic resonance (LSPR) and chemical enhancement on graphene. In these nanohybrid SERS substrates, the LSPR on TMD nanostructures is affected by the TMD morphology. Herein, we report the first successful growth of MoS2 nanodonuts (N-donuts) on graphene using a vapor transport process on graphene. Using Rhodamine 6G (R6G) as a probe, SERS spectra were compared on MoS2 N-donuts/graphene nanohybrids substrates. A remarkably high R6G SERS sensitivity up to 2 × 10−12 M has been obtained, which can be attributed to the more robust LSPR effect than in other TMD nanostructures such as nanodiscs as suggested by the finite-difference time-domain simulation. This result demonstrates that non-metallic TMD/graphene nanohybrids substrates can have SERS sensitivity up to one order of magnitude higher than that reported on the plasmonic metal nanostructures/2D materials SERS substrates, providing a promising scheme for high-sensitivity, low-cost applications for biosensing.more » « less