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Photocatalytic water splitting is a wireless method for solar-to-hydrogen conversion. To date, however, the efficiency of photocatalytic water splitting is still very low. Here, we have investigated the design, synthesis, and characterization of quadruple-band InGaN nanowire arrays, which consist of In 0.35 Ga 0.65 N, In 0.27 Ga 0.73 N, In 0.20 Ga 0.80 N, and GaN segments, with energy bandgaps of ∼2.1 eV, 2.4 eV, 2.6 eV, and 3.4 eV, respectively. Such multi-band InGaN nanowire arrays are integrated directly on a nonplanar wafer for enhanced light absorption. Moreover, a doping gradient is introduced along the lateral dimension of the nanowires, which forms a built-in electric field and promotes efficient charge carrier separation and extraction for water redox reactions. We have demonstrated that the quadruple-band InGaN nanowire photocatalyst can exhibit a solar-to-hydrogen efficiency of ∼5.2% with relatively stable operation. This work demonstrates a novel strategy using multi-band semiconductor nanostructures for artificial photosynthesis and solar fuel conversion with significantly improved performance. 

Monolayer hexagonal boron nitride (hBN) has been widely considered a fundamental building block for 2D heterostructures and devices. However, the controlled and scalable synthesis of hBN and its 2D heterostructures has remained a daunting challenge. Here, an hBN/graphene (hBN/G) interface‐mediated growth process for the controlled synthesis of high‐quality monolayer hBN is proposed and further demonstrated. It is discovered that the in‐plane hBN/G interface can be precisely controlled, enabling the scalable epitaxy of unidirectional monolayer hBN on graphene, which exhibits a uniform moiré superlattice consistent with single‐domain hBN, aligned to the underlying graphene lattice. Furthermore, it is identified that the deep‐ultraviolet emission at 6.12 eV stems from the 1s‐exciton state of monolayer hBN with a giant renormalized direct bandgap on graphene. This work provides a viable path for the controlled synthesis of ultraclean, wafer‐scale, atomically ordered 2D quantum materials, as well as the fabrication of 2D quantum electronic and optoelectronic devices.

 

Ultrawide‐bandgap semiconductors such as AlN, BN, and diamond hold tremendous promise for high‐efficiency deep‐ultraviolet optoelectronics and high‐power/frequency electronics, but their practical application has been limited by poor current conduction. Through a combined theoretical and experimental study, it is shown that a critical challenge can be addressed for AlN nanostructures by using N‐rich epitaxy. Under N‐rich conditions, the p‐type Al‐substitutional Mg‐dopant formation energy is significantly reduced by 2 eV, whereas the formation energy for N‐vacancy related compensating defects is increased by ≈3 eV, both of which are essential to achieve high hole concentrations of AlN. Detailed analysis of the current−voltage characteristics of AlN p‐i‐n diodes suggests that current conduction is dominated by hole‐carrier tunneling at room temperature, which is directly related to the activation energy of Mg dopants. At high Mg concentrations, the dispersion of Mg acceptor energy levels leads to drastically reduced activation energy for a portion of Mg dopants, evidenced by the small tunneling energy of 67 meV, which explains the efficient current conduction and the very small turn‐on voltage (≈5 V) for the diodes made of nanoscale AlN. This work shows that nanostructures can overcome the dopability challenges of ultrawide‐bandgap semiconductors and significantly increase the efficiency of devices.