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Strain fundamentally alters carrier transport in semiconductors by modifying their band structure and scattering pathways. In transition-metal dichalcogenides (TMDs), an emerging class of 2D semiconductors, we show that mobility modulation under biaxial strain is dictated by changes in inter-valley scattering rather than effective mass renormalization as in bulk silicon. Using a multiscale full-band transport framework that incorporates both intrinsic phonon, extrinsic impurity, and dielectric scattering, we find that tensile strain enhances n-type mobility through K–Q valley separation, while compressive strain improves p-type mobility via Γ–K decoupling. The tuning rates calculated from our full-band model far exceed those achieved by strain engineering in silicon. Both relaxed and strain-modulated carrier mobilities align quantitatively with experimentally verified measurements and are valid across a wide range of practical FET configurations. The enhancement remains robust across variations in temperature, carrier density, impurity level, and dielectric environment. Our results highlight the pivotal role of strain in improving the reliability and performance of 2D TMD-based electronics. 

Exotic quantum solids can host electronic states that spontaneously break rotational symmetry of the electronic structure, such as electronic nematic phases and unidirectional charge density waves (CDWs). When electrons couple to the lattice, uniaxial strain can be used to anchor and control this electronic directionality. Here, we reveal an unusual impact of strain on unidirectional “smectic” CDW orders in kagome superconductors ${\mathrm{AV}}_3{\mathrm{Sb}}_5$ using spectroscopic-imaging scanning tunneling microscopy. We discover local decoupling between the smectic electronic director axis and the direction of anisotropic strain. While the two can generally be aligned along the same direction in regions of a small CDW gap, the tendency for alignment decreases in regions where the CDW gap is the largest. This feature, in turn, suggests nanoscale variations in smectic susceptibility, which we attribute to a combination of local strain and electron correlation strength. Overall, we observe an unusually high decoupling rate between the smectic electronic director of the three-state Potts order and anisotropic strain, revealing weak smectoelastic coupling in the CDW phase of kagome superconductors. This finding is phenomenologically different from the extensively studied nematoelastic coupling in the Ising nematic phase of Ising nematic phase of Fe-based superconductor bulk single crystals, providing a contrasting picture of how strain can control electronic unidirectionality in different families of quantum materials. Published by the American Physical Society2025 

Abstract Interplay of magnetism and electronic band topology in unconventional magnets enables the creation and fine control of novel electronic phenomena. In this work, we use scanning tunneling microscopy and spectroscopy to study thin films of a prototypical kagome magnet Fe 3 Sn 2 . Our experiments reveal an unusually large number of densely-spaced spectroscopic features straddling the Fermi level. These are consistent with signatures of low-energy Weyl fermions and associated topological Fermi arc surface states predicted by theory. By measuring their response as a function of magnetic field, we discover a pronounced evolution in energy tied to the magnetization direction. Electron scattering and interference imaging further demonstrates the tunable nature of a subset of related electronic states. Our experiments provide a direct visualization of how in-situ spin reorientation drives changes in the electronic density of states of the Weyl fermion band structure. Combined with previous reports of massive Dirac fermions, flat bands, and electronic nematicity, our work establishes Fe 3 Sn 2 as an interesting platform that harbors an extraordinarily wide array of topological and correlated electron phenomena. 

Abstract In a material prone to a nematic instability, anisotropic strain in principle provides a preferred symmetry-breaking direction for the electronic nematic state to follow. This is consistent with experimental observations, where electronic nematicity and structural anisotropy typically appear hand-in-hand. In this work, we discover that electronic nematicity can be locally decoupled from the underlying structural anisotropy in strain-engineered iron-selenide (FeSe) thin films. We use heteroepitaxial molecular beam epitaxy to grow FeSe with a nanoscale network of modulations that give rise to spatially varying strain. We map local anisotropic strain by analyzing scanning tunneling microscopy topographs, and visualize electronic nematic domains from concomitant spectroscopic maps. While the domains form so that the energy of nemato-elastic coupling is minimized, we observe distinct regions where electronic nematic ordering fails to flip direction, even though the underlying structural anisotropy is locally reversed. The findings point towards a nanometer-scale stiffness of the nematic order parameter.