skip to main content


Search for: All records

Creators/Authors contains: "Wang, Jiawei"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Photonic molecules can realize complex optical energy modes that simulate states of matter and have application to quantum, linear, and nonlinear optical systems. To achieve their full potential, it is critical to scale the photonic molecule energy state complexity and provide flexible, controllable, stable, high-resolution energy state engineering with low power tuning mechanisms. In this work, we demonstrate a controllable, silicon nitride integrated photonic molecule, with three high-quality factor ring resonators strongly coupled to each other and individually actuated using ultralow-power thin-film lead zirconate titanate (PZT) tuning. The resulting six tunable supermodes can be fully controlled, including their degeneracy, location, and degree of splitting, and the PZT actuator design yields narrow PM energy state linewidths below 58 MHz without degradation as the resonance shifts, with over an order of magnitude improvement in resonance splitting-to-width ratio of 58, and power consumption of 90 nW per actuator, with a 1-dB photonic molecule loss. The strongly coupled PZT-controlled resonator design provides a high-degree of resolution and controllability in accessing the supermodes. Given the low loss of the silicon nitride platform from the visible to infrared and the three individual bus, six-port design, these results open the door to novel device designs and a wide range of applications including tunable lasers, high-order suppression ultranarrow-linewidth lasers, dispersion engineering, optical parametric oscillators, physics simulations, and atomic and quantum photonics.

     
    more » « less
  2. Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz2/3and 73.8 dB·Hz2/3third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.

     
    more » « less
  3. Abstract Narrow linewidth visible light lasers are critical for atomic, molecular and optical (AMO) physics including atomic clocks, quantum computing, atomic and molecular spectroscopy, and sensing. Stimulated Brillouin scattering (SBS) is a promising approach to realize highly coherent on-chip visible light laser emission. Here we report demonstration of a visible light photonic integrated Brillouin laser, with emission at 674 nm, a 14.7 mW optical threshold, corresponding to a threshold density of 4.92 mW μm −2 , and a 269 Hz linewidth. Significant advances in visible light silicon nitride/silica all-waveguide resonators are achieved to overcome barriers to SBS in the visible, including 1 dB/meter waveguide losses, 55.4 million quality factor (Q), and measurement of the 25.110 GHz Stokes frequency shift and 290 MHz gain bandwidth. This advancement in integrated ultra-narrow linewidth visible wavelength SBS lasers opens the door to compact quantum and atomic systems and implementation of increasingly complex AMO based physics and experiments. 
    more » « less
  4. null (Ed.)
  5. null (Ed.)
  6. null (Ed.)
  7. null (Ed.)
    Abstract CRISPR–Cas is an anti-viral mechanism of prokaryotes that has been widely adopted for genome editing. To make CRISPR–Cas genome editing more controllable and safer to use, anti-CRISPR proteins have been recently exploited to prevent excessive/prolonged Cas nuclease cleavage. Anti-CRISPR (Acr) proteins are encoded by (pro)phages/(pro)viruses, and have the ability to inhibit their host's CRISPR–Cas systems. We have built an online database AcrDB (http://bcb.unl.edu/AcrDB) by scanning ∼19 000 genomes of prokaryotes and viruses with AcrFinder, a recently developed Acr-Aca (Acr-associated regulator) operon prediction program. Proteins in Acr-Aca operons were further processed by two machine learning-based programs (AcRanker and PaCRISPR) to obtain numerical scores/ranks. Compared to other anti-CRISPR databases, AcrDB has the following unique features: (i) It is a genome-scale database with the largest collection of data (39 799 Acr-Aca operons containing Aca or Acr homologs); (ii) It offers a user-friendly web interface with various functions for browsing, graphically viewing, searching, and batch downloading Acr-Aca operons; (iii) It focuses on the genomic context of Acr and Aca candidates instead of individual Acr protein family and (iv) It collects data with three independent programs each having a unique data mining algorithm for cross validation. AcrDB will be a valuable resource to the anti-CRISPR research community. 
    more » « less
  8. The coadsorption of Hg0 and SO3 on pure and Cu/Mn doped CeO2(110) surfaces were investigated using the Density Functional Theory (DFT) method. A p (2 × 2) supercell periodic slab model with seven atomic layers was constructed to represent the CeO2(110) surface. The results indicated that Hg0 physically adsorbed on the CeO2(110) surface, while Hg0 chemically adsorbed on the Cu/Mn doped CeO2(110) surface, which agree well with the experimental results that Cu and Mn doped CeO2 greatly improved the Hg0 adsorption capacity of the adsorbent. The calculated results suggested that SO3 more easily adsorbs on the above three surfaces than Hg0 due to the higher adsorption energy. The adsorption configurations and electronic structures indicated SO3 reacted with O atoms of the surface to form SO42− species. Hence, SO3 inhibits Hg0 adsorption on the CeO2(110) surface by competing with Hg0 for surface lattice oxygen. In addition, SO3 decreased the activity of the surface O atoms, which directly caused the negative effect on Hg0 adsorption. 
    more » « less
  9. null (Ed.)