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The superior size and power scaling potential of ferroelectric-gated Mott transistors makes them promising building blocks for developing energy-efficient memory and logic applications in the post-Moore’s Law era. The close to metallic carrier density in the Mott channel, however, imposes the bottleneck for achieving substantial field effect modulation via a solid-state gate. Previous studies have focused on optimizing the thickness, charge mobility, and carrier density of single-layer correlated channels, which have only led to moderate resistance switching at room temperature. Here, we report a record high nonvolatile resistance switching ratio of 38,440% at 300 K in a prototype Mott transistor consisting of a ferroelectric PbZr_0.2Ti_0.8O₃gate and anRNiO₃(R: rare earth)/La_0.67Sr_0.33MnO₃composite channel. The ultrathin La_0.67Sr_0.33MnO₃buffer layer not only tailors the carrier density profile inRNiO₃through interfacial charge transfer, as corroborated by first-principles calculations, but also provides an extended screening layer that reduces the depolarization effect in the ferroelectric gate. Our study points to an effective material strategy for the functional design of complex oxide heterointerfaces that harnesses the competing roles of charge in field effect screening and ferroelectric depolarization effects.

 

Two‐dimensional (2D) transition metal dichalcogenides (TMDCs) such as MoS₂exhibit exceptionally strong nonlinear optical responses, while nanoscale control of the amplitude, polar orientation, and phase of the nonlinear light in TMDCs remains challenging. In this work, by interfacing monolayer MoS₂with epitaxial PbZr_0.2Ti_0.8O₃(PZT) thin films and free‐standing PZT membranes, the amplitude and polarization of the second harmonic generation (SHG) signal are modulated via ferroelectric domain patterning, which demonstrates that PZT membranes can lead to in‐operando programming of nonlinear light polarization. The interfacial coupling of the MoS₂polar axis with either the out‐of‐plane polar domains of PZT or the in‐plane polarization of domain walls tailors the SHG light polarization into different patterns with distinct symmetries, which are modeled via nonlinear electromagnetic theory. This study provides a new material platform that enables reconfigurable design of light polarization at the nanoscale, paving the path for developing novel optical information processing, smart light modulators, and integrated photonic circuits.

 

The inverse spinel ferrimagnetic NiCo₂O₄presents a unique model system for studying the competing effects of crystalline fields, magnetic exchange, and various types of chemical and lattice disorder on the electronic and magnetic states. Here, magnetotransport anomalies in high‐quality epitaxial NiCo₂O₄thin films resulting from the complex energy landscape are reported. A strong out‐of‐plane magnetic anisotropy, linear magnetoresistance, and robust anomalous Hall effect above 300 K are observed in 5–30 unit cell NiCo₂O₄films. The anomalous Hall resistance exhibits a nonmonotonic temperature dependence that peaks around room temperature, and reverses its sign at low temperature in films thinner than 20 unit cells. The scaling relation between the anomalous Hall conductivity and longitudinal conductivity reveals the intricate interplay between the spin‐dependent impurity scattering, band intrinsic Berry phase effect, and electron correlation. This study provides important insights into the functional design of NiCo₂O₄for developing spinel‐based spintronic applications.

 

We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba0.6Sr0.4TiO3 films, with field effect mobility up to 23 000 cm2 V−1 s−1 achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba0.6Sr0.4TiO3, from which we extract RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.

 

The ferrimagnetic inverse spinel NiCo 2 O 4 has attracted extensive research interest for its versatile electrochemical properties, robust magnetic order, high conductivity, and fast spin dynamics, as well as its highly tunable nature due to the closely coupled charge, spin, orbital, lattice, and defect effects. Single-crystalline epitaxial thin films of NiCo 2 O 4 present a model system for elucidating the intrinsic physical properties and strong tunability, which are not viable in bulk single crystals. In this Perspective, we discuss the recent advances in epitaxial NiCo 2 O 4 thin films, focusing on understanding its unusual magnetic and transport properties in light of crystal structure and electronic structure. The perpendicular magnetic anisotropy in compressively strained NiCo 2 O 4 films is explained by considering the strong spin–lattice coupling, particularly on Co ions. The prominent effect of growth conditions reveals the complex interplay between the crystal structure, cation stoichiometry, valence state, and site occupancy. NiCo 2 O 4 thin films also exhibit various magnetotransport anomalies, including linear magnetoresistance and sign change in anomalous Hall effect, which illustrate the competing effects of band-intrinsic Berry phase and impurity scattering. The fundamental understanding of these phenomena will facilitate the functional design of NiCo 2 O 4 thin films for nanoscale spintronic applications. 

The inverse spinel ferrimagnetic NiCo₂O₄possesses high magnetic Curie temperature T_C, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic properties in NiCo₂O₄thin films is critical for their implementation in nanoscale spintronic applications. In this work, we report the unconventional magnetotransport properties of epitaxial (001) NiCo₂O₄films on MgAl₂O₄substrates in the ultrathin limit. Anomalous Hall effect measurements reveal strong perpendicular magnetic anisotropy for films down to 1.5 unit cell (1.2 nm), while T_Cfor 3 unit cell and thicker films remains above 300 K. The sign change in the anomalous Hall conductivity [Formula: see text] and its scaling relation with the longitudinal conductivity ([Formula: see text]) can be attributed to the competing effects between impurity scattering and band intrinsic Berry curvature, with the latter vanishing upon the thickness driven metal–insulator transition. Our study reveals the critical role of film thickness in tuning the relative strength of charge correlation, Berry phase effect, spin–orbit interaction, and impurity scattering, providing important material information for designing scalable epitaxial magnetic tunnel junctions and sensing devices using NiCo₂O₄.

 

There is a strong drive behind the quest for thin-film materials that are oxygen-free and polar. Oxygen hinders the integration of ferroelectric oxides with semiconductors, which affects efforts to develop nonvolatile memory—that is, a memory that can sustain its information without power. Ideally, one would use single-crystalline perovskite films to construct these devices so that the polarization can be maximized. However, when depositing crystalline polar perovskite oxides onto silicon or germanium, a nonpolar oxide buffer layer ( 1 ) or a native oxide layer ( 2 ) can be present at the interface, compromising device performance. A nitrogen-based perovskite may overcome this limitation ( 3 ). On page 1488 of this issue, Talley et al. ( 4 ) report the synthesis of lanthanum tungsten nitride (LaWN 3 ) thin films, which marks the first demonstration of polar nitride perovskite. This may lead to oxygen-free integration of functional perovskite on a semiconductor platform.