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We use a general theory to show a new class of bandpass filter shapes for coupled-resonator filters that provides the lowest insertion loss and the narrowest bandwidth achievable for a given intrinsic Q and bandwidth. 

We demonstrate device field characterization using NSOM collection and interaction measurement modes via the backside buried-oxide of large scale photonic circuits fabricated in monolithic electronics-photonics CMOS platforms (here a microdisk resonator) post-processed using flip-chip substrate-removal. 

We demonstrate a scheme for microring resonators to operate as standing-wave resonators while eliminating reflections and maintaining traveling-wave-resonator-like through-port response, potentially enabling interdigitated p-n junction microring modulators to achieve higher performance than other junction geometries. 

Convergence of high-performance silicon photonics and electronics, monolithically integrated in state-of-the-art CMOS platforms, is the holy grail for enabling the ultimate efficiencies, performance, and scaling of electronic-photonic systems-on-chip. It requires the emergence of platforms that combine state-of-the-art RF transistors with optimized silicon photonics, and a generation of photonic device technology with ultralow energies, increased operating spectrum, and the elimination of power-hungry thermal tuning. In this paper, in a co-optimized monolithic electronics-photonics platform (GlobalFoundries 45CLO), we turn the metal-oxide-semiconductor (MOS) field-effect transistor’s basic structure into a novel, highly efficient MOS capacitor ring modulator. It has the smallest ring cavity (1.5 μm radius), largest corresponding spur-free free spectral range ( FSR = 8.5    THz ), and record 30 GHz/V shift efficiency in the O-band among silicon modulators demonstrated to date. With 1 V pp RF drive, we show an open optical eye while electro-optically tuning the modulator to track over 400 pm (69 GHz) change in the laser wavelength (using 2.5 V DC range). A 90 GHz maximum electro-optic resonance shift is demonstrated with under 40 nW of power, providing a strong nonthermal tuning mechanism in a CMOS photonics platform. The modulator has a separately optimized body layer but shares the gate device layer and the gate oxide with 45 nm transistors, while meeting all CMOS manufacturability design rules. This type of convergent evolution of electronics and photonics may be the future of platforms for high-performance systems-on-chip. 

We demonstrate a high Q, compact photonic crystal nanobeam cavity in the new 45nm GlobalFoundries 45CLO monolithic electronics-photonics platform optimized for silicon photonics – with an intrinsic Q of 134,000, FSR of 24.17 nm, and a theoretical Q/V of 2.2E-5 (λ/n)^(-3). 

We report the first photonic crystal microcavity modulator realized in a foundry CMOS photonics platform. Bandwidth of 2.8 GHz and 5 Gbps data rate demonstrated utilizing an interdigitated p-n junction in a WDM compatible structure. 

We report on microring modulators in the new 45CLO photonics-optimized 45 nm electronic-photonic CMOS platform. Interdigitated disk and vertical-junction rib microring de- signs are demonstrated, with 20 GHz bandwidth at 25 Gbps data rate. 

We propose a novel photonic circuit element configuration that emulates the through-port response of a bus coupled traveling-wave resonator using two standing-wave resonant cavities. In this “reflectionless resonator unit”, the two constituent cavities, here photonic crystal (PhC) nanobeams, exhibit opposite mode symmetries and may otherwise belong to a single design family. They are coupled evanescently to the bus waveguide without mutual coupling. We show theoretically, and verify using FDTD simulations, that reflection is eliminated when the two cavities are wavelength aligned. This occurs due to symmetry-induced destructive interference at the bus coupling region in the proposed photonic circuit topology. The transmission is equivalent to that of a bus-coupled traveling-wave (e.g. microring) resonator for all coupling conditions. We experimentally demonstrate an implementation fabricated in a new 45 nm silicon-on-insulator complementary metal-oxide semiconductor (SOI CMOS) electronic-photonic process. Both PhC nanobeam cavities have a full-width half-maximum (FWHM) mode length of 4.28μm and measured intrinsic Q’s in excess of 200,000. When the resonances are tuned to degeneracy and coalesce, transmission dips of the over-coupled PhC nanobeam cavities of −16 dB and −17 dB nearly disappear showing a remaining single dip of −4.2 dB, while reflection peaks are simultaneously reduced by 10 dB, demonstrating the quasi-traveling-wave behavior. This photonic circuit topology paves the way for realizing low-energy active devices such as modulators and detectors that can be cascaded to form wavelength-division multiplexed links with smaller power consumption and footprint than traveling wave, ring resonator based implementations.

 

We emulate the reflectionless response of a traveling-wave resonator using two bus-coupled photonic crystal nanobeam cavities with respective symmetric and antisymmetric modes. The scheme may enable new active device platforms beyond ring resonators.