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Abstract Knowledge of the thermodynamic equilibria and domain structures of ferroelectrics is critical to establishing their structure–property relationships that underpin their applications from piezoelectric devices to nonlinear optics. Here, we establish the strain condition for strain phase separation and polydomain formation and analytically predict the corresponding domain volume fractions and wall orientations of, relatively low symmetry and theoretically more challenging, monoclinic ferroelectric thin films by integrating thermodynamics of ferroelectrics, strain phase equilibria theory, microelasticity, and phase‐field method. Using monoclinic K_xNa_1 − xNbO₃(0.5 < x < 1.0) thin films as a model system, we establish the polydomain strain–strain phase diagrams, from which we identify two types of monoclinic polydomain structures. The analytically predicted strain conditions of formation, domain volume fractions, and domain wall orientations for the two polydomain structures are consistent with phase‐field simulations and in good agreement with experimental results in the literature. The present study demonstrates a general, powerful analytical theoretical framework to predict the strain phase equilibria and domain wall orientations of polydomain structures applicable to both high‐ and low‐symmetry ferroelectrics and provide fundamental insights into the equilibrium domain structures of ferroelectric K_xNa_1 − xNbO₃thin films that are of technology relevance for lead‐free dielectric and piezoelectric applications. 

Abstract Achieving substantial electrostrain alongside a large effective piezoelectric strain coefficient (d₃₃*) in piezoelectric materials remains a formidable challenge for advanced actuator applications. Here, a straightforward approach to enhance these properties by strategically designing the domain structure and controlling the domain switching through the introduction of arrays of ordered {100}<100> dislocations is proposed. This dislocation engineering yields an intrinsic lock‐in steady–state electrostrain of 0.69% at a low field of 10 kV cm⁻¹without external stress and an output strain energy density of 5.24 J cm⁻³in single‐crystal BaTiO₃, outperforming the benchmark piezoceramics and relaxor ferroelectric single‐crystals. Additionally, applying a compression stress of 6 MPa fully unlocks electrostrains exceeding 1%, yielding a remarkabled₃₃* value over 10 000 pm V⁻¹and achieving a record‐high strain energy density of 11.67 J cm⁻³. Optical and transmission electron microscopy, paired with laboratory and synchrotron X‐ray diffraction, is employed to rationalize the observed electrostrain. Phase‐field simulations further elucidate the impact of charged dislocations on domain nucleation and domain switching. These findings present an effective and sustainable strategy for developing high‐performance, lead‐free piezoelectric materials without the need for additional chemical elements, offering immense potential for actuator technologies. 

Abstract Solomon rings, upholding the symbol of wisdom with profound historical roots, were widely used as decorations in ancient architecture and clothing. However, it was only recently discovered that such topological structures can be formed by self-organization in biological/chemical molecules, liquid crystals, etc. Here, we report the observation of polar Solomon rings in a ferroelectric nanocrystal, which consist of two intertwined vortices and are mathematically equivalent to a$${4}_{1}^{2}$$ $4_1^2$link in topology. By combining piezoresponse force microscopy observations and phase-field simulations, we demonstrate the reversible switching between polar Solomon rings and vertex textures by an electric field. The two types of topological polar textures exhibit distinct absorption of terahertz infrared waves, which can be exploited in infrared displays with a nanoscale resolution. Our study establishes, both experimentally and computationally, the existence and electrical manipulation of polar Solomon rings, a new form of topological polar structures that may provide a simple way for fast, robust, and high-resolution optoelectronic devices. 

Abstract Relaxor ferroelectrics (RFEs) are being actively investigated for energy‐storage applications due to their large electric‐field‐induced polarization with slim hysteresis and fast energy charging–discharging capability. Here, a novel nanograin engineering approach based upon high kinetic energy deposition is reported, for mechanically inducing the RFE behavior in a normal ferroelectric Pb(Zr_0.52Ti_0.48)O₃(PZT), which results in simultaneous enhancement in the dielectric breakdown strength (E_DBS) and polarization. Mechanically transformed relaxor thick films with 4 µm thickness exhibit an exceptionalE_DBSof 540 MV m⁻¹and reduced hysteresis with large unsaturated polarization (103.6 µC cm⁻²), resulting in a record high energy‐storage density of 124.1 J cm⁻³and a power density of 64.5 MW cm⁻³. This fundamental advancement is correlated with the generalized nanostructure design that comprises nanocrystalline phases embedded within the amorphous matrix. Microstructure‐tailored ferroelectric behavior overcomes the limitations imposed by traditional compositional design methods and provides a feasible pathway for realization of high‐performance energy‐storage materials. 

Abstract Multifunctionality as a paradigm requires materials exhibiting multiple superior properties. Integrating second‐order optical nonlinearity and large bandgap with piezoelectricity can, for example, enable broadband, strain‐tunable photonics. Though very different phenomena at distinct frequencies, both second‐order optical nonlinearity and piezoelectricity are third‐rank polar tensors present only in acentric crystal structures. However, simultaneously enhancing both phenomena is highly challenging since it involves competing effects with tradeoffs. Recently, a large switchable ferroelectric polarization of ≈80 μC cm⁻²was reported in Zn_1‐xMg_xO films. Here, ferroelectric Zn_1‐xMg_xO is demonstrated to be a platform that hosts simultaneously a 30% increase in the electronic bandgap, a 50% enhancement in the second harmonic generation (SHG) coefficients, and a near 200% improvement in the piezoelectric coefficients over pure ZnO. These enhancements are shown to be due to a 400% increase in the electronic anharmonicity and a ≈200% decrease in the ionic anharmonicity with Mg substitution. Precisely controllable periodic ferroelectric domain gratings are demonstrated down to 800 nm domain width, enabling ultraviolet quasi‐phase‐matched optical harmonic generation as well as domain‐engineered piezoelectric devices.