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Modern integrated circuits have active components on the order of nanometers. However, optical devices are often limited by diffraction effects with dimensions measured in wavelengths. Nanoscale photodetectors capable of converting light into electrical signals are necessary for the miniaturization of optoelectronic applications. Strong coupling of light and free electrons in plasmonic nanostructures overcomes these limitations by confining light into sub-wavelength volumes with intense local electric fields. Localized electric fields are intensified at nanorod ends and in nanogap regions between nanostructures. Hot carriers generated within these high-field regions from nonradiative decay of surface plasmons can be injected into the conduction band of adjacent semiconductors, enabling sub-bandgap photodetection. The optical properties of these plasmonic photodetectors can be tuned by modifying antenna materials and geometric parameters like size, thickness, and shape. Electrical interconnects provide connectivity to convert light into electrical signals. In this work, interconnected nanogap antennas fabricated with 35 nm gaps are encapsulated with ALD-deposited [Formula: see text], enabling photodetection via Schottky barrier junctions. Photodetectors with high responsivity (12[Formula: see text][Formula: see text]A/mW) are presented for wavelengths below the bandgap of [Formula: see text] (3.2[Formula: see text]eV). These plasmonic nanogap antennas are sub-wavelength, tunable photodetectors with sub-bandgap responsivity for a broad spectral range. 

Plasmonic nanostructures with electrical connections have potential applications as new electro-optic devices due to their strong light–matter interactions. Plasmonic dimers with nanogaps between adjacent nanostructures are especially good at enhancing local electromagnetic (EM) fields at resonance for improved performance. In this study, we use optical extinction measurements and high-resolution electron microscopy imaging to investigate the thermal stability of electrically interconnected plasmonic dimers and their optical and morphological properties. Experimental measurements and finite difference time domain (FDTD) simulations are combined to characterize temperature effects on the plasmonic properties of large arrays of Au nanostructures on glass substrates. Experiments show continuous blue shifts of extinction peaks for heating up to 210°C. Microscopy measurements reveal these peak shifts are due to morphological changes that shrink nanorods and increase nanogap distances. Simulations of the nanostructures before and after heating find good agreement with experiments. Results show that plasmonic properties are maintained after thermal processing, but peak shifts need to be considered for device design. 

Vanadium oxide (VOx) compounds feature various polymorphs, including V2O5 and VO2, with attractive temperature-tunable optical and electrical properties. However, to achieve the desired material property, high-temperature post-deposition annealing of as-grown VOx films is mostly needed, limiting its use for low-temperature compatible substrates and processes. Herein, we report on the low-temperature hollow-cathode plasma-enhanced atomic layer deposition (ALD) of crystalline vanadium oxide thin films using tetrakis(ethylmethylamido)vanadium and oxygen plasma as a precursor and coreactant, respectively. To extract the impact of the type of plasma source, VOx samples were also synthesized in an inductively coupled plasma-enhanced ALD reactor. Moreover, we have incorporated in situ Ar-plasma and ex situ thermal annealing to investigate the tunability of VOx structural properties. Our findings confirm that both plasma-ALD techniques were able to synthesize as-grown polycrystalline V2O5 films at 150 °C. Postdeposition thermal annealing converted the as-grown V2O5 films into different crystalline VOx states: V2O3, V4O9, and VO2. The last one, VO2 is particularly interesting as a phase-change material, and the metal-insulator transition around 70 °C has been confirmed using temperature-dependent x-ray diffraction and resistivity measurements.