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Abstract Lithium-ion batteries (LIBs) have solidified their position as primary energy storage solutions for applications ranging from portable electronics to electric vehicles. As power-intensive applications expand, achieving fast charging/discharging performance is increasingly critical for high-energy-density batteries. However, the increased thickness of electrodes in LIBs presents significant challenges for charge (Li⁺ and electron) transfer kinetics, as longer charge migration distances hinder fast charging and discharging performance. Enormous efforts have been made to summarize advancements in materials chemistry—optimizing ionic pathways and crystal structure—to enhance Li⁺ transfer within the bulk of electrode materials. Yet, materials design and modifications fall short of fully addressing Li⁺and electron transport limitations in thick electrodes. Despite the significance of potentially offering a solution to these constraints, the strategic engineering of electrode architecture has been rarely discussed. In this mini-review, we highlight recent innovations in electrode structural design for fast-charging applications, examining gradient architectures, low-tortuosity structures, and novel current collector designs. By exploring these advanced approaches and offering perspectives on future developments, we aim to promote further advancements toward achieving high-energy-density, fast-charging LIBs. 

PurposeThe National Science Foundation (NSF) Research Experience for Undergraduates (REU) programs are traditionally delivered in-person and full-time (40 h per week) for 10 weeks during the summer. However, this type of format has the potential to limit broader student participation. This study aims to compare learning assessment data between a traditional NSF REU (10 weeks of summer, full-time, in-person) to an alternative NSF REU delivered virtually, part-time and over 10 months as a result of the coronavirus disease 2019 (COVID-19) pandemic. Design/methodology/approachA retrospective pre-then-post survey was completed to assess perceived learning gains for each REU program. Three learning gains categories were assessed: entrepreneurial competencies, career goals and research skill development.T-tests were used to evaluate a difference in means between pre and post. FindingsFindings show the greatest quantity of learning gains within the alternative program delivery. Moreover, a larger quantity of learning gains was perceived within the first semester of the alternative program delivery compared to the second semester. Practical implicationsThe authors propose the NSF should be intentional about trying new approaches to REU programs delivery, including duration and format, as a way to broaden participation in engineering. Originality/valueThis study is original in that it is the first of its kind to assess an alternative REU program delivery (allowed only because of the COVID-19 pandemic) in comparison to traditional REU program delivery. 

Abstract Recent advancements in 3D printing technology have expanded its application to manufacturing pressure sensors. By harnessing the cost‐effectiveness, streamlined processes, and design flexibility of 3D printing, sensor fabrication can be customized to meet specific performance needs. Thus far, 3D printing in pressure sensor development has been primarily limited to creating molds for transferring patterns onto flexible substrates, restricting both material selection and sensor performance. To fully unlock the potential of 3D printing in advanced pressure sensor fabrication, it is crucial to establish effective design rules focused on enhancing the figure of merit performance. This study introduces a universal design strategy aimed at maintaining high sensitivity across a wide pressure range—a challenging feat, as sensitivity significantly decreases at higher pressures. Our approach centers on engineering the deformability of 3D‐printed structures, achieving a linear increase in contact area between sensor patterns and electrodes without reaching saturation. Sensors designed with high elongation and low stiffness exhibit consistent sensitivity of 162.5 kPa⁻¹ across a broad pressure range (0.05–300 kPa). Mechanistic investigations through finite element analysis confirm that engineered deformability is key to achieving this enhanced linear response, offering robust sensing capabilities for demanding applications such as deep‐sea and space exploration. 

Abstract We report on the enhancement of electrical properties of unsubstituted polythiophene (PT) through oxidative chemical vapor deposition (oCVD) and mild plasma treatment. The work function of p-type oCVD PT increases after the treatment, indicating the Fermi level shift toward the valence band edge and an increase in carrier density. In addition, regardless of initial values, nearly the same work function is obtained for all the plasma-treated oCVD PT films as high as ∼5.25 eV, suggesting the pseudo-equilibrium state is reached in the oCVD PT from the plasma treatment. This increase in carrier density after plasma treatment is attributed to the activation of initially not-activated dopant species (i.e. neutrally charged Br), which is analogous to the release of trapped charge carriers to the valence band of the oCVD PT. The enhancement of electrical properties of oCVD PT is directly related to the improvement of the thin film transistor performance such as drain current on/off ratio, ∼10³and field effect mobility, 2.25 × 10⁻²cm²Vs⁻¹, compared to untreated counterparts of 10²and 0.09 × 10⁻²cm Vs⁻¹, respectively. 

Abstract A new manufacturing paradigm is showcased to exclude conventional mold‐dependent manufacturing of pressure sensors, which typically requires a series of complex and expensive patterning processes. This mold‐free manufacturing leverages high‐resolution 3D‐printed multiscale microstructures as the substrate and a gas‐phase conformal polymer coating technique to complete the mold‐free sensing platform. The array of dome and spike structures with a controlled spike density of a 3D‐printed substrate ensures a large contact surface with pressures applied and extended linearity in a wider pressure range. For uniform coating of sensing elements on the microstructured surface, oxidative chemical vapor deposition is employed to deposit a highly conformal and conductive sensing element, poly(3,4‐ethylenedioxythiophene) at low temperatures (<60 °C). The fabricated pressure sensor reacts sensitively to various ranges of pressures (up to 185 kPa⁻¹) depending on the density of the multiscale features and shows an ultrafast response time (≈36 µs). The mechanism investigations through the finite element analysis identify the effect of the multiscale structure on the figure‐of‐merit sensing performance. These unique findings are expected to be of significant relevance to technology that requires higher sensing capability, scalability, and facile adjustment of a sensor geometry in a cost‐effective manufacturing manner. 

Enhanced Zn anode kinetics and reversibility are achieved at a high ZUR by guiding Zn²⁺plating underlying the SnO_1.17interphase with a regulated (101) orientation, surpassing those achieved by inducing Zn(002) plating overlying the interphase. 

This work demonstrates the design protocols for high-energy-density solid-state Li–S batteries (SSLSBs). Also, it highlights the challenging issues for achieving practical SSLSBs towards the application in next-level electric transportation. 

Despite the outstanding achievements in multiple areas such as displays and energy, oxide electronics has been limited to single-polar (n-type) applications due to the facile generation of oxygen vacancies as native donors. On the contrary, the processing of p-type oxides is restrained due to the high formation energy of native acceptors. Furthermore, the oxygen 2p orbitals of the majority of oxide semiconductors are anisotropic and localized to the valence band maximum (VBM), resulting in a large effective mass of holes and hence low carrier mobility. Hybrid orbital electronic configurations with cation d10 (closed shell structure) and cation s2 (pseudo-closed structure) have been suggested initially in complex oxides (e.g., CuMO2 where M= Al, Ga, and In; and SrCu2O2) to delocalize the oxygen 2p orbitals from the VBM. However, these complex oxides require high temperatures to process and are difficult to engineer the electrical properties of carrier density and carrier mobility due to the correlated nature of multi-cation species. Several single-cation p-type oxides such as PbO, Bi2O3, and SnO have emerged as well, where the energy level of a unique s-orbital of cations is similar to oxygen 2p orbitals, forming strong hybrid structures. In addition, a simpler single-cation structure leads to easier control of electrical properties required in practical device applications such as thin film transistors (TFT) and complementary logic inverters. We previously reported scalable processing of p-type SnOx through thermodynamic-based interfacial reactions as well as reactive sputtering.¹More recently, we also suggested multi-modal encapsulation to enhance TFT on- and off-state behaviors and identified a defect complex as an effective p-type doping agent.²However, challenges remain since the TFT off-state current is large, and the defect/trap state density is high. In this presentation, we share our approaches to engineer the off-state current and passivate the defect/trap states. In addition to channel thickness optimization, intrinsic (Sn vacancy or oxygen interstitial) and extrinsic (H-related species) doping strategies to adjust channel carrier density will be compared. The performance of several surface treatments (oxygen plasma and UV) and TFT back channel encapsulations (SiO2 and Al2O3) will be systematically compared. Then, the device performance of optimized p-type SnO TFTs and complementary inverters with n-type InZnO TFTs will be discussed. ReferencesLee et al., ACS Applied Materials & Interfaces, 13 (46), 55676–55686 (2021)Lee et al., ACS Applied Materials & Interfaces, 14 (48), 53999–54011 (2022) Acknowledgments This work was partially supported by National Science Foundation, Award number ECCS-1931088 and CBET-2207302.