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Abstract Cadmium telluride (CdTe) thin film solar cells have gained significant attention in the photovoltaic industry due to their high efficiency and low cost. CdTe solar cells have achieved a high‐power conversion efficiency of 23.1%. To further boost the device's performance, it is crucial to systematically tune the doping concentration and carrier concentration, which are dominated by the doping approach and the following dopant activation processes. Both Group I elements (e.g., Cu) and Group V elements (e.g., As) doping have demonstrated high efficiency and utilizing various doping techniques. This review provides an overview of the history of the CdTe thin film technology, doping mechanisms, doping techniques, challenges, and potential solutions to further improve device performance. 

Group V doping in CdSeTe device can improve power conversion efficiency (PCE) and device stability. Arsenic (As) incorporation into CdSeTe has been demonstrated via both in situ and ex situ techniques; however, optimizing the back contact for group V‐doped CdSeTe devices remains a critical challenge. Here, solution‐processed arsenic chalcogenides (i.e., As₂Te₃and As₂Se₃) as dual‐role materials, serving as both dopants and back‐contact materials for high‐efficiency CdSeTe devices, are investigated. During the formation of the back contact, a portion of the arsenic chalcogenides diffuses into the CdSeTe absorber, facilitating p‐type doping. The remaining materials forms a stable back‐contact layer that facilitate carrier collection and reducing recombination losses at the CdSeTe back surface. Particularly, CdSeTe device employing Te rich As₂Te₃layer as the dopant and back‐contact materials achieves a PCE of 18.34%, demonstrating the dual functionality of solution‐processed arsenic chalcogenides in simultaneously doping the absorber and optimizing charge extraction. This solution based cost‐effective As doping approach offers a promising pathway for advancing CdSeTe photovoltaic technology. 

This study compares Spiro-OMeTAD, CuSCN, and PTAA as hole transport layers in carbon-based perovskite solar cells. Spiro-OMeTAD showed best efficiency, CuSCN better stability, while PTAA underperformed, highlighting a performance-stability trade-off. 

Antimony selenide (Sb2Se3) is a promising material for solar energy conversion due to its low toxicity, high stability, and excellent light absorption capabilities. However, Sb2Se3 films produced via physical vapor deposition often exhibit Se-deficient surfaces, which result in a high carrier recombination and poor device performance. The conventional selenization process was used to address selenium loss in Sb2Se3 solar cells with a substrate configuration. However, this traditional selenization method is not suitable for superstrated Sb2Se3 devices with the window layer buried underneath the Sb2Se3 light absorber layer, as it can lead to significant diffusion of the window layer material into Sb2Se3 and damage the device. In this work, we have demonstrated a rapid thermal selenization (RTS) technique that can effectively selenize the Sb2Se3 absorber layer while preventing the S diffusion from the buried CdS window layer into the Sb2Se3 absorber layer. The RTS technique significantly reduces carrier recombination loss and carrier transport resistance and can achieve the highest efficiency of 8.25%. Overall, the RTS method presents a promising approach for enhancing low-dimensional chalcogenide thin films for emerging superstrate chalcogenide solar cell applications. 

Perovskite solar cells (PSCs) have emerged as a leading low‐cost photovoltaic technology, achieving power conversion efficiencies (PCEs) of up to 26.1%. However, their commercialization is hindered by stability issues and the need for controlled processing environments. Carbon‐electrode‐based PSCs (C‐PSCs) offer enhanced stability and cost‐effectiveness compared to traditional metal‐electrode PSCs, i.e., Au and Ag. However, processing challenges persist, particularly in air conditions where moisture sensitivity poses a significant hurdle. Herein, a novel air processing technique is presented for planar C‐PSCs that incorporates antisolvent vapors, such as chlorobenzene, into a controlled air‐quenching process. This method effectively mitigates moisture‐induced instability, resulting in champion PCEs exceeding 20% and robust stability under ambient conditions. The approach retains 80% of initial efficiency after 30 h of operation at maximum power point without encapsulation. This antisolvent‐mediated air‐quenching technique represents a significant advancement in the scalable production of C‐PSCs, paving the way for future large‐scale deployment. 

The tandem solar cell presents a potential solution to surpass the Shockley–Queisser limit observed in single-junction solar cells. However, creating a tandem device that is both cost-effective and highly efficient poses a significant challenge. In this study, we present proof of concept for a four-terminal (4T) tandem solar cell utilizing a wide bandgap (1.6–1.8 eV) perovskite top cell and a narrow bandgap (1.2 eV) antimony selenide (Sb2Se3) bottom cell. Using a one-dimensional (1D) solar cell capacitance simulator (SCAPS), our calculations indicate the feasibility of this architecture, projecting a simulated device performance of 23% for the perovskite/Sb2Se3 4T tandem device. To validate this, we fabricated two wide bandgap semitransparent perovskite cells with bandgaps of 1.6 eV and 1.77 eV, respectively. These were then mechanically stacked with a narrow bandgap antimony selenide (1.2 eV) to create a tandem structure, resulting in experimental efficiencies exceeding 15%. The obtained results demonstrate promising device performance, showcasing the potential of combining perovskite top cells with the emerging, earth-abundant antimony selenide thin film solar technology to enhance overall device efficiency. 

Antimony selenide (Sb₂Se₃) emerges as a promising sunlight absorber in thin film photovoltaic applications due to its excellent light absorption properties and carrier transport behavior, attributed to the quasi‐one‐dimensional Sb₄Se₆‐nanoribbon crystal structure. Overcoming the challenge of aligning Sb₂Se₃‐nanoribbons normal to substrates for efficient photogenerated carrier extraction, a solution‐processed nanocrystalline Sb₂(S,Se)₃‐seeds are employed on the CdS buffer layer. These seeds facilitate superstrated Sb₂Se₃thin film solar cell growth through a close‐space sublimation approach. The Sb₂(S,Se)₃‐seeds guided the Sb₂Se₃absorber growth along a [002]‐preferred crystal orientation, ensuring a smoother interface with the CdS window layer. Remarkably, Sb₂(S,Se)₃‐seeds improve carrier transport, reduce series resistance, and increase charge recombination resistance, resulting in an enhanced power conversion efficiency of 7.52%. This cost‐effective solution‐processed seeds planting approach holds promise for advancing chalcogenide‐based thin film solar cells in large‐scale manufacturing.