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Abstract Electric currents carrying a net spin polarization are widely used in spintronics, whereas globally spin-neutral currents are expected to play no role in spin-dependent phenomena. Here we show that, in contrast to this common expectation, spin-independent conductance in compensated antiferromagnets and normal metals can be efficiently exploited in spintronics, provided their magnetic space group symmetry supports a non-spin-degenerate Fermi surface. Due to their momentum-dependent spin polarization, such antiferromagnets can be used as active elements in antiferromagnetic tunnel junctions (AFMTJs) and produce a giant tunneling magnetoresistance (TMR) effect. Using RuO2as a representative compensated antiferromagnet exhibiting spin-independent conductance along the [001] direction but a non-spin-degenerate Fermi surface, we design a RuO2/TiO2/RuO2(001) AFMTJ, where a globally spin-neutral charge current is controlled by the relative orientation of the Néel vectors of the two RuO2electrodes, resulting in the TMR effect as large as ~500%. These results are expanded to normal metals which can be used as a counter electrode in AFMTJs with a single antiferromagnetic layer or other elements in spintronic devices. Our work uncovers an unexplored potential of the materials with no global spin polarization for utilizing them in spintronics.
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Antiferromagnetic spin current rectifier
It is shown theoretically, that an antiferromagnetic dielectric with bi-axial anisotropy, such as NiO, can be used for the rectification of linearly-polarized AC spin current. The AC spin current excites two evanescent modes in the antiferromagnet, which, in turn, create DC spin current flowing back through the antiferromagnetic surface. Spin diode based on this effect can be used in future spintronic devices as direct detector of spin current in the millimeter- and submillimeter-wave bands. The sensitivity of such a spin diode is comparable to the sensitivity of modern electric Schottky diodes and lies in the range 102-103 V/W for 30×30 nm2 structure.
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- Award ID(s):
- 1641989
- PAR ID:
- 10024364
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- AIP Advances
- Volume:
- 7
- Issue:
- 5
- ISSN:
- 2158-3226
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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