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Title: Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN
Award ID(s):
1653383 1508854 1312582
NSF-PAR ID:
10048738
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
122
Issue:
24
ISSN:
0021-8979
Page Range / eLocation ID:
245702
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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