The tandem solar cell presents a potential solution to surpass the Shockley–Queisser limit observed in single-junction solar cells. However, creating a tandem device that is both cost-effective and highly efficient poses a significant challenge. In this study, we present proof of concept for a four-terminal (4T) tandem solar cell utilizing a wide bandgap (1.6–1.8 eV) perovskite top cell and a narrow bandgap (1.2 eV) antimony selenide (Sb2Se3) bottom cell. Using a one-dimensional (1D) solar cell capacitance simulator (SCAPS), our calculations indicate the feasibility of this architecture, projecting a simulated device performance of 23% for the perovskite/Sb2Se3 4T tandem device. To validate this, we fabricated two wide bandgap semitransparent perovskite cells with bandgaps of 1.6 eV and 1.77 eV, respectively. These were then mechanically stacked with a narrow bandgap antimony selenide (1.2 eV) to create a tandem structure, resulting in experimental efficiencies exceeding 15%. The obtained results demonstrate promising device performance, showcasing the potential of combining perovskite top cells with the emerging, earth-abundant antimony selenide thin film solar technology to enhance overall device efficiency.
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Lewis‐Adduct Mediated Grain‐Boundary Functionalization for Efficient Ideal‐Bandgap Perovskite Solar Cells with Superior Stability
Abstract State‐of‐the‐art perovskite solar cells (PSCs) have bandgaps that are invariably larger than 1.45 eV, which limits their theoretically attainable power conversion efficiency. The emergent mixed‐(Pb, Sn) perovskites with bandgaps of 1.2–1.3 eV are ideal for single‐junction solar cells according to the Shockley–Queisser limit, and they have the potential to deliver higher efficiency. Nevertheless, the high chemical activity of Sn(II) in these perovskites makes it extremely challenging to control their physical properties and chemical stability, thereby leading to PSCs with relatively low PCE and stability. In this work, the authors employ the Lewis‐adduct SnF2·3FACl additive in the solution‐processing of ideal‐bandgap halide perovskites (IBHPs), and prepare uniform large‐grain perovskite thin films containing continuously functionalized grain boundaries with the stable SnF2phase. Such Sn(II)‐rich grain‐boundary networks significantly enhance the physical properties and chemical stability of the IBHP thin films. Based on this approach, PSCs with an ideal bandgap of 1.3 eV are fabricated with a promising efficiency of 15.8%, as well as enhanced stability. The concept of Lewis‐adduct‐mediated grain‐boundary functionalization in IBHPs presented here points to a new chemical route for approaching the Shockley–Queisser limit in future stable PSCs.
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- Award ID(s):
- 1538893
- PAR ID:
- 10067489
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Energy Materials
- Volume:
- 8
- Issue:
- 27
- ISSN:
- 1614-6832
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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