Compact integrated photonic components for lambda=3-15 micron
Chemicals are best recognized by their unique wavelength specific optical absorption signatures in the molecular fingerprint region from λ=3-15μm. In recent years, photonic devices on chips are increasingly being used for chemical and biological sensing. Silicon has been the material of choice of the photonics industry over the last decade due to its easy integration with silicon electronics as well as its optical transparency in the near-infrared telecom wavelengths. Silicon is optically transparent from 1.1 μm to 8 μm with research from several groups in the mid-IR. However, intrinsic material losses in silicon exceed 2dB/cm after λ~7μm (~0.25dB/cm at λ=6μm). In addition to the waveguiding core, an appropriate transparent cladding is also required. Available core-cladding choices such as Ge-GaAs, GaAs-AlGaAs, InGaAs-InP would need suspended membrane photonic crystal waveguide geometries. However, since the most efficient QCLs demonstrated are in the InP platform, the choice of InGaAs-InP eliminates need for wafer bonding versus other choices. The InGaAs-InP material platform can also potentially cover the entire molecular fingerprint region from λ=3-15μm. At long wavelengths, in monolithic architectures integrating lasers, detectors and passive sensor photonic components without wafer bonding, compact passive photonic integrated circuit (PIC) components are desirable to reduce expensive epi material loss more »
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10090866
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Proceedings of the SPIE
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12
5. In this Letter, we present a high extinction ratio and compact on-chip polarization beam splitter (PBS), based on an extreme skin-depth (eskid) waveguide. Subwavelength-scale gratings form an effectively anisotropic metamaterial cladding and introduce a large birefringence. The anisotropic dielectric perturbation of the metamaterial cladding suppresses the TE polarization extinction via exceptional coupling, while the large birefringence efficiently cross-couples the TM mode, thus reducing the coupling length. We demonstrated the eskid-PBS on a silicon-on-insulator platform and achieved an ultra-high extinction ratio PBS ($≈<#comment/>60dB$for TE and$≈<#comment/>48dB$for TM) with a compact coupling length ($≈<#comment/>14.5µ<#comment/>m$). The insertion loss is also negligible ($<<#comment/>0.6dB$). The bandwidth is$><#comment/>80$(30) nm for the TE (TM) extinction ratio$><#comment/>20dB$. Our ultra-high extinction ratio PBS is crucial in implementing efficient polarization diversity circuits, especially where a high degree of polarization distinguishability is necessary, such as photonic quantum information processing.