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Title: Highly tin doped GaAs at low growth temperatures using tetraethyl tin by metal organic vapor phase epitaxy
Award ID(s):
1720415
PAR ID:
10133137
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
Journal of Crystal Growth
Volume:
507
Issue:
C
ISSN:
0022-0248
Page Range / eLocation ID:
255 to 259
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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