An official website of the United States government
Abstract Amorphous thin films of Ti doped GeO2are of interest for coatings of the mirrors in gravitational wave detectors (GWDs) due to their low internal friction (Vajenteet al2021Phys. Rev. Lett.127071101). The addition of Ti to amorphous GeO2(a-GeO2) enables tailoring of the optical and structural properties of the mixtures. However, the specific modifications that occur in the amorphous network with the addition of Ti are not known. In this work, x-ray photoelectron spectroscopy is used to identify modifications to the bonding of Ge and Ti atoms in mixtures of Ti dopeda-GeO2with different Ti cation content. The formation of (Ti–O–Ge) bonds is evidenced from: (1) the presence of a peak which intensity increases with Ti content and causes a shift to lower binding energy (BE) of the core level O 1speak; (2) the shift to higher BE of the Ti 2p3/2peak and a decrease in the energy split; and (3) the shift to lower BE of the Ge 3d5/2peak and increase in the energy split. These changes reflect modifications to the bonding when Ge replaces Ti in Ti–O–Ti bonds and Ti replaces Ge in Ge–O–Ge bonds due to their difference in electronegativity. A decrease in the O–O nearest-neighbour distance due to the incorporation of Ti atom is also observed from the broadening of the valence band spectra. The results show the 0.44 Ti dopeda-GeO2mixture has a balance between the (Ti–O–Ge) and the (Ge–O–Ge) networks, not observed in Ti poor and Ti rich mixtures. This finding could have important consequences in the optimisation of amorphous Ti dopeda-GeO2mixtures for low internal friction coatings of GWDs.
more »
« less
Structure and morphology of low mechanical loss TiO 2 -doped Ta 2 O 5
The exceptional stability required from high finesse optical cavities and high precision interferometers is fundamentally limited by Brownian motion noise in the interference coatings of the cavity mirrors. In amorphous oxide coatings these thermally driven fluctuations are dominant in the high index layer compared to those in the low index SiO2layer in the stack. We present a systematic study of the evolution of the structural and optical properties of ion beam sputtered TiO2-doped Ta2O5films with annealing temperature. We show that low mechanical loss in TiO2-doped Ta2O5with a Ti cation ratio = 0.27 is associated with a material that consists of a homogeneous titanium-tantalum-oxygen mixture containing a low density of nanometer sized Ar-filled voids. When the Ti cation ratio is 0.53, phase separation occurs leading to increased mechanical loss. These results suggest that amorphous mixed oxides with low mechanical loss could be identified by considering the thermodynamics of ternary phase formation.
more »
« less
- PAR ID:
- 10169020
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Optical Materials Express
- Volume:
- 10
- Issue:
- 7
- ISSN:
- 2159-3930
- Format(s):
- Medium: X Size: Article No. 1687
- Size(s):
- Article No. 1687
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Due to its excellent optical properties, such as low absorption and scattering, amorphous is commonly used as an optical coating material, often in combination with layers to produce a highly reflective stack. However, the high mechanical loss of limits the thermal-noise performance of such coatings when used in precision measurement applications. Doping with has previously been shown to slightly reduce the mechanical loss, but it is still very high compared to many other materials, particularly at low temperatures. In this paper, we present a detailed study of different heat treatment temperatures and of Ti concentrations of up to nominally 75%. We show a significant mechanical-loss reduction for the mixture with the highest Ti cation content, which crystallized after heat treatment at 500°C. The resulting loss is much lower than that of pure or that of after crystallization, making further studies highly interesting, in particular investigations of scattering which may pose a major drawback for optical applications.more » « less
-
Abstract We report on the development and extensive characterization of co-sputtered tantala–zirconia (Ta 2 O 5 -ZrO 2 ) thin films, with the goal to decrease coating Brownian noise in present and future gravitational-wave detectors. We tested a variety of sputtering processes of different energies and deposition rates, and we considered the effect of different values of cation ratio η = Zr/(Zr + Ta) and of post-deposition heat treatment temperature T a on the optical and mechanical properties of the films. Co-sputtered zirconia proved to be an efficient way to frustrate crystallization in tantala thin films, allowing for a substantial increase of the maximum annealing temperature and hence for a decrease of coating mechanical loss φ c . The lowest average coating loss was observed for an ion-beam sputtered sample with η = 0.485 ± 0.004 annealed at 800 °C, yielding φ ¯ c = 1.8 × 1 0 − 4 rad. All coating samples showed cracks after annealing. Although in principle our measurements are sensitive to such defects, we found no evidence that our results were affected. The issue could be solved, at least for ion-beam sputtered coatings, by decreasing heating and cooling rates down to 7 °C h −1 . While we observed as little optical absorption as in the coatings of current gravitational-wave interferometers (0.5 parts per million), further development will be needed to decrease light scattering and avoid the formation of defects upon annealing.more » « less
-
In this work, we explore inverse designed reconfigurable digital metamaterial structures based on phase change material Sb2Se3for efficient and compact integrated nanophotonics. An exemplary design of a 1 × 2 optical switch consisting of a 3 µm x 3 µm pixelated domain is demonstrated. We show that: (i) direct optimization of a domain containing only Si and Sb2Se3pixels does not lead to a high extinction ratio between output ports in the amorphous state, which is owed to the small index contrast between Si and Sb2Se3in such a state. As a result, (ii) topology optimization, e.g., the addition of air pixels, is required to provide an initial asymmetry that aids the amorphous state's response. Furthermore, (iii) the combination of low loss and high refractive index change in Sb2Se3, which is unique among all phase change materials in the telecommunications 1550 nm band, translates into an excellent projected performance; the optimized device structure exhibits a low insertion loss (∼1.5 dB) and high extinction ratio (>18 dB) for both phase states.more » « less
-
Abstract In this work, TiO2thin films deposited by the atomic layer deposition (ALD) method were treated with a special N2O plasma surface treatment and used as the gate dielectric for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The N2O plasma surface treatment effectively reduces defects in the oxide during low-temperature ALD growth. In addition, it allows oxygen atoms to diffuse into the device cap layer to increase the barrier height and thus reduce the gate leakage current. These TiO2films exhibit a dielectric constant of 54.8 and a two-terminal current of 1.96 × 10−10A mm−1in 2μm distance. When applied as the gate dielectric, the AlGaN/GaN MISHEMT with a 2μm-gate-length shows a high on/off ratio of 2.59 × 108and a low subthreshold slope (SS) of 84 mV dec−1among all GaN MISHEMTs using TiO2as the gate dielectric. This work provides a feasible way to significantly improve the TiO2film electrical property for gate dielectrics, and it suggests that the developed TiO2dielectric is a promising high-κgate oxide and a potential passivation layer for GaN-based MISHEMTs, which can be further extended to other transistors.more » « less
