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1. Chemical modification in and on single phase [NiO] 0.5 [Al 2 O 3 ] 0.5 nanopowders produces “chocolate chip‐like” Ni x @[NiO] 0.5‐x [Al 2 O 3 ] 0.5 nanocomposite nanopowders

   https://doi.org/10.1111/jace.16632  

   Wang, Fei ; Sun, Kai ; Yi, Eongyu ; Laine, Richard M. ( June 2019 , Journal of the American Ceramic Society)

   Phase‐pure [NiO]_0.5[Al₂O₃]_0.5spinel nanoparticles (NPs) with limited aggregation were obtained via liquid‐feed flame spray pyrolysis (LF‐FSP) by combusting metalloorganic precursor solutions. Thereafter “chocolate chip‐like” Ni_x[NiO_0.5‐x][Al₂O₃]_0.5nanoparticles consisting of primary [NiO_0.5‐x][Al₂O₃]_0.5particles with average particle sizes of 40‐60 nm decorated with Ni metal particles (<10 nm in diameter) dispersed on the surface were synthesized by heat treating the spinel NPs at 800°C/7 h in flowing 5% H₂:N₂100 mL/min in a fluidized bed reactor. The synthesized materials were characterized using TEM, XRD, FTIR, and TGA/DTA. The Ni depleted areas consist primarily of γ‐Al₂O₃. The Ni content (800°C) was determined by TGA to be ≈11.3 wt.% based on TGA oxidation behavior. The successful synthesis of such nanocomposites with limited aggregation on a high temperature support provides a facile route to synthesize well‐defined NP catalysts. This work serves as a baseline study for an accompanying paper, wherein thin, flexible, dense films made from these same NPs are used as regenerable catalysts for carbon nanotube syntheses.

    

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2. Formation of atomically ordered and chemically selective Si—O—Ti monolayer on Si 0.5 Ge 0.5 (110) for a MIS structure via H 2 O 2 (g) functionalization

   https://doi.org/10.1063/1.4966690  

   Park, Sang Wook ; Choi, Jong Youn ; Siddiqui, Shariq ; Sahu, Bhagawan ; Galatage, Rohit ; Yoshida, Naomi ; Kachian, Jessica ; Kummel, Andrew C. ( February 2017 , The Journal of Chemical Physics)
3. Effect of annealing atmosphere p O 2 on leakage current in 80(Bi 0.5 Na 0.5 )TiO 3 -20(Bi 0.5 K 0.5 )TiO 3 piezoelectric thin films

   https://doi.org/10.1063/1.4981771  

   Walenza-Slabe, J. ; Gibbons, B. J. ( April 2017 , Applied Physics Letters)
4. Tunneling current in HfO 2 and Hf 0.5 Zr 0.5 O 2 -based ferroelectric tunnel junction

   https://doi.org/10.1063/1.5016823  

   Dong, Zhipeng ; Cao, Xi ; Wu, Tong ; Guo, Jing ( March 2018 , Journal of Applied Physics)
5. CeO 2 Doping of Hf 0.5 Zr 0.5 O 2 Thin Films for High Endurance Ferroelectric Memories

   https://doi.org/10.1002/aelm.202101258  

   Yu, Zhouchangwan ; Saini, Balreen ; Liao, Pei‐Jean ; Chang, Yu‐Kai ; Hou, Duen‐Huei ; Nien, Chih‐Hung ; Shih, Yu‐Chuan ; Yeong, Sai Hooi ; Afanas'ev, Valeri ; Huang, Fei ; et al ( March 2022 , Advanced Electronic Materials)

   Ferroelectric switching is demonstrated in CeO₂‐doped Hf_0.5Zr_0.5O₂(HZCO) thin films with application in back‐end‐of‐line compatible embedded memories. At low cerium oxide doping concentrations (2.0–5.6 mol%), the ferroelectric orthorhombic phase is stabilized after annealing at temperatures below 400 °C. HZCO ferroelectrics show reliable switching characteristics beyond 10¹¹cycles in TiN/HZCO/TiN capacitors, several orders of magnitude greater than identically processed Hf_0.5Zr_0.5O₂(HZO) capacitors, without sacrificing polarization and retention. Internal photoemission and photoconductivity experiments show that CeO₂‐doping introduces in‐gap states in HZCO that are nearly aligned with TiN Fermi level, facilitating electron injection through these states. The enhanced average bulk conduction, which may lead to more uniform thermal dissipation in the HZCO films, delays irreversible degradation via breakdown that leads to device failure after repeated programming cycles.

    

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