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Featuring broadband operation and high efficiency, gallium nitride (GaN)-based radio frequency (RF) power amplifiers are key components to realize the next generation mobile network. However, to fully implement GaN high electron mobility transistors (HEMT) for such applications, it is necessary to overcome thermal reliability concerns stemming from localized extreme temperature gradients that form under high voltage and power operation. In this work, we developed a deep-ultraviolet thermoreflectance thermal imaging capability, which can potentially offer the highest spatial resolution among diffraction-limited far-field optical thermography techniques. Experiments were performed to compare device channel temperatures obtained from near-ultraviolet and deep-ultraviolet wavelength illumination sources for the proof of concept of the new characterization method. Deep-ultraviolet thermoreflectance imaging will facilitate the study of device self-heating within transistors based on GaN and emerging ultra-wide bandgap semiconductors (e.g., β-Ga2O3, AlxGa1-xN, and diamond) subjected to simultaneous extreme electric field and heat flux conditions.
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Ultra-fast Thermoreflectance Imaging for Electronic, Optoelectronic, and Thermal Devices
We review the recent advances in thermal characterization of micro/nanoscale electronic, optoelectronic, thermal devices based on thermoreflectance imaging. Thermoreflectance imaging is a non-invasive optical technique that can visualize surface thermal response of devices and integrated circuits (IC). Recent advances of the technique have enabled high-resolution, ultra-fast transient thermal imaging with 800 ps temporal resolution. Using visible or UV illumination, spatial resolution of about 200-250 nm can be achieved. Many IC substrates, e.g. Si, GaAs, are transparent to near IR illumination in 1-1.5 μm wavelength range. Through-substrate thermal imaging of flip-chip bonded ICs with micron spatial resolution has been demonstrated. We provide key examples of various devices characterized by the technique such as CMOS ICs, GaN HEMT, nanowire transistors, thin-film solar cells, and micro-thermal cloaking devices. In addition to the validation of electrothermal models, material and fabrication defects can be identified. Finally we discuss the advantages/limitations, and perspective of thermoreflectance imaging technique.
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- Award ID(s):
- 1905571
- PAR ID:
- 10180296
- Date Published:
- Journal Name:
- 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
- Page Range / eLocation ID:
- 1 to 7
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Conference Paper:
- https://doi.org/10.1109/BCICTS45179.2019.8972732
