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Title: Process Optimization and Characterization of 25 GHz Bandwidth 850 nm P-i-N Photodetector for 50 Gb/s Optical Links
GaAs P-i-N photodetectors have been fabricated and characterized to act as receivers in 50 Gb/s optical links. The fabricated photodetector with a 20 um mesa diameter has shown to achieve 26 GHz bandwidth with dark current less than 1 nA from room temperature to 85°C operation.  more » « less
Award ID(s):
1640196
PAR ID:
10182703
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
CS MANTECH 2018
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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