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1. Crystalline–Amorphous Nanostructures: Microstructure, Property and Modelling

   https://doi.org/10.3390/ma16072874  

   Wei, Bingqiang ; Li, Lin ; Shao, Lin ; Wang, Jian ( April 2023 , Materials)

   Crystalline metals generally exhibit good deformability but low strength and poor irradiation tolerance. Amorphous materials in general display poor deformability but high strength and good irradiation tolerance. Interestingly, refining characteristic size can enhance the flow strength of crystalline metals and the deformability of amorphous materials. Thus, crystalline–amorphous nanostructures can exhibit an enhanced strength and an improved plastic flow stability. In addition, high-density interfaces can trap radiation-induced defects and accommodate free volume fluctuation. In this article, we review crystalline–amorphous nanocomposites with characteristic microstructures including nanolaminates, core–shell microstructures, and crystalline/amorphous-based dual-phase nanocomposites. The focus is put on synthesis of characteristic microstructures, deformation behaviors, and multiscale materials modelling.

    

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2. The influence of crystal thickness and interlayer interactions on the properties of heavy ion irradiated MoS 2

   https://doi.org/10.1088/2053-1583/ab817b  

   Isherwood, Liam H. ; Hennighausen, Zachariah ; Son, Seok-Kyun ; Spencer, Ben F. ; Wady, Paul T. ; Shubeita, Samir M. ; Kar, Swastik ; Casiraghi, Cinzia ; Baidak, Aliaksandr ( May 2020 , 2D Materials)

   Ion irradiation is a versatile tool to introduce controlled defects into two-dimensional (2D) MoS₂on account of its unique spatial resolution and plethora of ion types and energies available. In order to fully realise the potential of this technique, a holistic understanding of ion-induced defect production in 2D MoS₂crystals of different thicknesses is mandatory. X-ray photoelectron spectroscopy, electron diffraction and Raman spectroscopy show that thinner MoS₂crystals are more susceptible to radiation damage caused by 225 keV Xe⁺ions. However, the rate of defect production in quadrilayer and bulk crystals is not significantly different under our experimental conditions. The rate at which S atoms are sputtered as a function of radiation exposure is considerably higher for monolayer MoS₂, compared to bulk crystals, leading to MoO₃formation. P-doping of MoS₂is observed and attributed to the acceptor states introduced by vacancies and charge transfer interactions with adsorbed species. Moreover, the out-of-plane vibrational properties of irradiated MoS₂crystals are shown to be strongly thickness-dependent: in mono- and bilayer MoS₂, the confinement of phonons by defects results in a blueshift of the$A_{1g}$mode. Whereas, a redshift is observed in bulk crystals due to attenuation of the effective restoring forces acting on S atoms caused by vacancies in adjacent MoS₂layers. Consequently, the$A_{1g}$frequency of tri- and quadrilayer crystals is statistically invariant on account oft competition between phonon confinement effects and interlayer interactions. The$A_{1g}$linewidth is observed to decrease in bi- and trilayer crystals after low dose irradiation and is attributed to layer decoupling. This work shows that there is a complex interplay between defect production, crystal thickness and interlayer interactions in MoS₂. Our results demonstrate that ion irradiation is an effective tool to modulate the electronic, vibrational and structural properties of MoS₂, which may prove beneficial for practical applications.

    

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3. Ultrathin quasi-2D amorphous carbon dielectric prepared from solution precursor for nanoelectronics

   https://doi.org/10.1038/s44172-023-00141-9  

   An, Fufei ; Wang, Congjun ; Pham, Viet Hung ; Borisevich, Albina ; Qian, Jiangchao ; Yin, Kaijun ; Pidaparthy, Saran ; Robinson, Brian ; Chou, Ang-Sheng ; Lee, Junseok ; et al ( December 2023 , Communications Engineering)

   Materials keeping thickness in atomic scale but extending primarily in lateral dimensions offer properties attractive for many emerging applications. However, compared to crystalline counterparts, synthesis of atomically thin films in the highly disordered amorphous form, which avoids nonuniformity and defects associated with grain boundaries, is challenging due to their metastable nature. Here we present a scalable and solution-based strategy to prepare large-area, freestanding quasi-2D amorphous carbon nanomembranes with predominant sp²bonding and thickness down to 1–2 atomic layers, from coal-derived carbon dots as precursors. These atomically thin amorphous carbon films are mechanically strong with modulus of 400 ± 100 GPa and demonstrate robust dielectric properties with high dielectric strength above 20 MV cm⁻¹and low leakage current density below 10⁻⁴ A cm⁻²through a scaled thickness of three-atomic layers. They can be implemented as solution-deposited ultrathin gate dielectrics in transistors or ion-transport media in memristors, enabling exceptional device performance and spatiotemporal uniformity.

    

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4. Dual Beam In Situ Radiation Studies of Nanocrystalline Cu

   https://doi.org/10.3390/ma12172721  

   Fan, Cuncai ; Shang, Zhongxia ; Niu, Tongjun ; Li, Jin ; Wang, Haiyan ; Zhang, Xinghang ( September 2019 , Materials)

   Nanocrystalline metals have shown enhanced radiation tolerance as grain boundaries serve as effective defect sinks for removing radiation-induced defects. However, the thermal and radiation stability of nanograins are of concerns since radiation may induce grain boundary migration and grain coarsening in nanocrystalline metals when the grain size falls in the range of several to tens of nanometers. In addition, prior in situ radiation studies on nanocrystalline metals have focused primarily on single heavy ion beam radiations, with little consideration of the helium effect on damage evolution. In this work, we utilized in situ single-beam (1 MeV Kr++) and dual-beam (1 MeV Kr++ and 12 keV He+) irradiations to investigate the influence of helium on the radiation response and grain coarsening in nanocrystalline Cu at 300 °C. The grain size, orientation, and individual grain boundary character were quantitatively examined before and after irradiations. Statistic results suggest that helium bubbles at grain boundaries and grain interiors may retard the grain coarsening. These findings provide new perspective on the radiation response of nanocrystalline metals. 

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5. Photovoltaic Response of Thin-Film CdTe Solar Cells under Accelerated Neutron Radiation in a TRIGA Reactor

   Powell, Kaden ; Lund, Matthew ; Wang, Meng-Jen ; Qian, Yang ; Magginetti, David ; Reese, Matthew ; Cazalas, Edward ; Sjoden, Glenn ; Yoon, Heayoung ( June 2020 , Electronic Materials Symposium)

   Cadmium telluride (CdTe) solar cells are a promising photovoltaic (PV) technology for producing power in space owing to their high-efficiency (> 22.1 %), potential for specific power, and cost-effective manufacturing processes. In contrast to traditional space PVs, the high-Z (atomic number) CdTe absorbers can be intrinsically robust under extreme space radiation, offering long-term stability. Despite these advantages, the performance assessment of CdTe solar cells under high-energy particle irradiation (e.g., photons, neutrons, charged particles) is limited in the literature, and their stability is not comprehensively studied. In this work, we present the PV response of n-CdS / p-CdTe PVs under accelerated neutron irradiation. We measure PV properties of the devices at different neutron/photon doses. The equivalent dose deposited in the CdTe samples is simulated with deterministic and Monte Carlo radiation transport methods. Thin-film CdTe solar cells were synthesized on a fluorine-doped tin oxide (FTO) coated glass substrate (≈ 4 cm × 4 cm). CdS:O (≈ 100 nm) was reactively RF sputtered in an oxygen/argon ambient followed by a close-spaced sublimation deposition of CdTe (≈ 3.5 μm) in an oxygen/helium ambient. The sample was exposed to a 10 min vapor CdCl2 in oxygen/helium ambient at 430˚C. The samples were exposed to a wet CuCl2 solution prior to anneal 200ºC. A gold back-contact was formed on CdTe via thermal evaporation. The final sample contains 16 CdTe devices. For neutron irradiation, we cleaved the CdTe substrate into four samples and exposed two samples to ≈ 90 kW reactor power neutron radiation for 5.5 hours and 8.2 hours, respectively, in our TRIGA (Training, Research, Isotopes, General Atomics) reactor. We observed a noticeable color change of the glass substrates to brown after the neutron/gamma reactor exposure. Presumably, the injected high-energy neutrons caused the breaking of chemical bonds and the displacement of atoms in the glass substrates, creating point defects and color centers. The I-V characteristics showed noticeable deterioration with over 8 hour radiations. Specifically, the saturation current of the control devices was ≈ 25 nA increasing to 1 μA and 10 μA for the 5.5-hour and 8.2-hour radiated samples, respectively. The turn-on voltage of the control devices (≈ 0.85 V) decreased with the irradiated sample (≈ 0.75 V for 5.5-hour and ≈ 0.5 V for 8.2-hour exposures), implying noticeable radiation damage occurred at the heterojunction. The higher values of the ideality factor for irradiated devices (n > 2.2) compared to that of the control devices (n ≈ 1.3) also support the deterioration of the p-n junction. We observed the notable decrease in shunt resistance (RSH) and the increase in series resistance (Rs) with the neutron dose. It is possible that Cu ions introduced during the CuCl2 treatment may migrate into CdTe grain boundaries (GBs). The presence of Cu ions at GBs can create additional leakage paths for photocarrier transport, deteriorating the overall PV performance. We estimated the radiation dose of CdTe in comparison to Si (conventional PV) using a UUTR model (e.g., MCNP6 2D UTR Reactor simulations). In this model, we simulated Si and CdTe at the center point of the triangular fuel lattice and used an “unperturbed flux” tally in the water. Our simulations yielded a dose rate of 6916 Gy/s of neutrons and 16 Gy/s of photons for CdTe, and 1 Gy/s of neutrons and 21 Gy/s of photons for Si (doses +/- <1%). The large dose rate of neutrons in CdTe is mainly attributed to the large thermal neutron absorption cross-section of 113Cd. Based on this estimation, we calculate that the exposure of our CdTe PVs is equivalent to several million years in LEO (Low-Earth Orbit), or about 10,000 years for Si in LEO. Currently, we are working on a low-dose neutron/photon radiation on CdTe PVs and their light I-Vs and microstructural characterizations to gain better understanding on the degradation of CdTe PVs. 

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