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1. Multi-stimuli responsive luminescent azepane-substituted β-diketones and difluoroboron complexes

   https://doi.org/10.1039/c7qm00137a  

   Wang, Fang ; DeRosa, Christopher A. ; Daly, Margaret L. ; Song, Daniel ; Sabat, Michal ; Fraser, Cassandra L. ( January 2017 , Materials Chemistry Frontiers)

   Difluoroboron β-diketonate (BF 2 bdk) compounds show environment-sensitive optical properties in solution, aggregation-induced emission (AIE) and multi-stimuli responsive fluorescence switching in the solid state. Here, a series of 4-azepane-substituted β-diketone (bdk) ligands ( L-H , L-OMe , L-Br ) and their corresponding difluoroboron dyes ( D-H , D-OMe , D-Br ) were synthesized, and various responsive fluorescence properties of the compounds were studied, including solvatochromism, viscochromism, AIE, mechanochromic luminescence (ML) and halochromism. Compared to the β-diketones, the boron complexes exhibited higher extinction coefficients but lower quantum yields, and red-shifted absorption and emission in CH 2 Cl 2 . Computational studies showed that intramolecular charge transfer (ICT) dominated rather than π–π* transitions in all the compounds regardless of boron coordination. In solution, all the bdk ligands and boron dyes showed red-shifted emission in more polar solvents and increased fluorescence intensity in more viscous media. Upon aggregation, the emission of the β-diketones was quenched, however, the boronated dyes showed increased emission, indicative of AIE. Solid-state emission properties, ML and halochromism, were investigated on spin cast films. For ML, smearing caused a bathochromic emission shift for L-Br , and powder X-ray diffraction (XRD) patterns showed that the “as spun” and thermally annealed statesmore »were more crystalline and the smeared state was amorphous. No obvious ML emission shift was observed for L-H or L-OMe , and the boronated dyes were not mechano-active. Trifluoroacetic acid (TFA) and triethylamine (TEA) vapors were used to study halochromism. Large hypsochromic emission shifts were observed for all the compounds after exposure to TFA vapor, and reversible fluorescence switching was achieved using the acid/base pair.« less
2. UV-irradiation of self-assembled triphenylamines affords persistent and regenerable radicals

   https://doi.org/10.1039/c8sc04607g  

   Sindt, Ammon J. ; DeHaven, Baillie A. ; McEachern, David F. ; Dissanayake, D. M. M. ; Smith, Mark D. ; Vannucci, Aaron K. ; Shimizu, Linda S. ( January 2019 , Chemical Science)

   UV-irradiation of assembled urea-tethered triphenylamine dimers results in the formation of persistent radicals, whereas radicals generated in solution are reactive and quickly degrade. In the solid-state, high quantities of radicals (approximately 1 in 150 molecules) are formed with a half-life of one week with no significant change in the single crystal X-ray diffraction. Remarkably, after decay, re-irradiation of the solid sample regenerates the radicals to their original concentration. The photophysics upon radical generation are also altered. Both the absorption and emission are significantly quenched without external oxidation likely due to the delocalization of the radicals within the crystals. The factors that influence radical stability and generation are correlated to the rigid supramolecular framework formed by the urea tether of the triphenylamine dimer. Electrochemical evidence demonstrates that these compounds can be oxidized in solution at 1.0 V vs. SCE to generate radical cations, whose EPR spectra were compared with spectra of the solid-state photogenerated radicals. Additionally, these compounds display changes in emission due to solvent effects from fluorescence to phosphorescence. Understanding how solid-state assembly alters the photophysical properties of triphenylamines could lead to further applications of these compounds for magnetic and conductive materials.
3. Precrystallization solute assemblies and crystal symmetry

   https://doi.org/10.1039/D1FD00080B  

   Warzecha, Monika ; Verma, Lakshmanji ; Chakrabarti, Rajshree ; Hadjiev, Viktor G. ; Florence, Alastair J. ; Palmer, Jeremy C. ; Vekilov, Peter G. ( July 2022 , Faraday Discussions)

   Solution crystallization is a part of the synthesis of materials ranging from geological and biological minerals to pharmaceuticals, fine chemicals, and advanced electronic components. Attempts to predict the structure, growth rates and properties of emerging crystals have been frustrated, in part, by the poor understanding of the correlations between the oligomeric state of the solute, the growth unit, and the crystal symmetry. To explore how a solute monomer or oligomer is selected as the unit that incorporates into kinks and how crystal symmetry impacts this selection, we combine scanning probe microscopy, optical spectroscopy, and all-atom molecular simulations using as examples two organic materials, olanzapine (OZPN) and etioporphyrin I (EtpI). The dominance of dimeric structures in OZPN crystals has spurred speculation that the dimers preform in the solution, where they capture the majority of the solute, and then assemble into crystals. By contrast, EtpI in crystals aligns in parallel stacks of flat EtpI monomers unrelated by point symmetry. Raman and absorption spectroscopies show that solute monomers are the majority solute species in solutions of both compounds. Surprisingly, the kinetics of incorporation of OZPN into kinks is bimolecular, indicating that the growth unit is a solute dimer, a minority solution component. Themore »disconnection between the dominant solute species, the growth unit, and the crystal symmetry is even stronger with EtpI, for which the (010) face grows by incorporating monomers, whereas the growth unit of the (001) face is a dimer. Collectively, the crystallization kinetics results with OZPN and EtpI establish that the structures of the dominant solute species and of the incorporating solute complex do not correlate with the symmetry of the crystal lattice. In a broader context, these findings illuminate the immense complexity of crystallization scenarios that need to be explored on the road to the understanding and control of crystallization.« less
4. Shortwave infrared luminescent Pt-nanowires: a mechanistic study of emission in solution and in the solid state

   https://doi.org/10.1039/c7dt02317k  

   Cheadle, Carl ; Ratcliff, Jessica ; Berezin, Mikhail ; Pal'shin, Vadim ; Nemykin, Victor N. ; Gerasimchuk, Nikolay N. ( January 2017 , Dalton Trans.)

   Several complexes of “PtL 2 ” composition containing two cyanoxime anions – 2-oximino-2-cyano- N -piperidineacetamide (PiPCO − ) and 2-oximino-2-cyano- N -morpholylacetamide (MCO − ) – have been obtained and characterized both in solution and in the solid state. Complexes exist as two distinct polymorphs: monomeric yellow complexes and dark-green [PtL 2 ] n 1D polymers, while for the MCO − anion a red, solvent containing dimeric [Pt(MCO) 2 ·DMSO] 2 complex has also been isolated. The interconversion of polymorphs was investigated. The monomeric PtL 2 units are arranged into anisotropic extended solid [PtL 2 ] n polymers with the help of Pt⋯Pt metallophilic interactions. Crystal structures of monomeric PtL 2 (L = PiPCO − , MCO − ) and red dimeric [Pt(MCO) 2 ·DMSO] 2 complexes were determined and revealed the cis -arrangement of cyanoxime anions. The Pt–Pt distance in the “head-to-tail” red dimer was found to be 3.133 Å. The structure of the polymeric [Pt(PiPCO) 2 ] n compound was elucidated using the EXAFS method and evidenced the formation of Pt-wires with ∼3.15 Å intermetallic separation. The EPR spectra of both 1D polymers at variable temperatures indicate the absence of Pt( iii ) species. Both pure dark-green [PtLmore »2 ] n polymers showed a considerable room temperature electrical conductivity of 20–30 S cm −1 , which evidences the formation of a mixed valence Pt( ii )/Pt( iv ) system. We discovered that these 1D polymeric [PtL 2 ] n complexes show an intense NIR fluorescence beyond 1000 nm, while yellow monomeric PtL 2 complexes are not emissive at all. The room temperature excitation spectra of 1D polymeric [PtL 2 ] n complexes demonstrated their strong emission beyond 1000 nm regardless of the used excitation wavelength between 350 and 800 nm, which is typical of systems with delocalized charge carriers. For the first time the formation of mixed valence “metal wires” held together by metallophilic interactions is directly linked both with an intense fluorescence in the NIR region of the spectrum and with the electrical conductivity. The effect of the concentration of [PtL 2 ] n complexes dispersed in the dielectric salt matrix on the photoluminescence wavelength and intensity was investigated. Both polymers show a quantum yield that is remarkably high for this region of the spectrum, reaching ∼2%. Variable temperature emission of polymeric [PtL 2 ] n in the −190–+60 °C range was studied as well.« less
5. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K.more »The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less