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Abstract While only few organic photodiodes have photoresponse past 1 µm, novel shortwave infrared (SWIR) polymers are emerging, and a better understanding of the limiting factors in narrow bandgap devices is critically needed to predict and advance performance. Based on state‐of‐the‐art SWIR bulk heterojunction photodiodes, this work demonstrates a model that accounts for the increasing electric‐field dependence of photocurrent in narrow bandgap materials. This physical model offers an expedient method to pinpoint the origins of efficiency losses, by decoupling the exciton dissociation efficiency and charge collection efficiency in photocurrent–voltage measurements. These results from transient photoconductivity measurements indicate that the main loss is due to poor exciton dissociation, particularly significant in photodiodes with low‐energy charge‐transfer states. Direct measurements of the noise components are analyzed to caution against using assumptions that could lead to an overestimation of detectivity. The devices show a peak detectivity of 5 × 1010Jones with a spectral range up to 1.55 µm. The photodiodes are demonstrated to quantify the ethanol–water content in a mixture within 1% accuracy, conveying the potential of organics to enable economical, scalable detectors for SWIR spectroscopy.
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Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder
Abstract To achieve high detectivity in infrared detectors, it is critical to reduce the device noise. However, for non-crystalline semiconductors, an essential framework is missing to understand and predict the effects of disorder on the dark current. This report presents experimental and modeling studies on the noise current in exemplar organic bulk heterojunction photodiodes, with 10 donor–acceptor combinations spanning wavelength between 800 and 1600 nm. A significant reduction of the noise and higher detectivity were found in devices using non-fullerene acceptors (NFAs) in comparison to those using fullerene derivatives. The low noise in NFA blends was attributed to a sharp drop off in the distribution of bandtail states, as revealed by variable-temperature density-of-states measurements. Taking disorder into account, we developed a general physical model to explain the dependence of thermal noise on the effective bandgap and bandtail spread. The model provides theoretical targets for the maximum detectivity that can be obtained at different detection wavelengths in inherently disordered infrared photodiodes.
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- PAR ID:
- 10214986
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- npj Flexible Electronics
- Volume:
- 4
- Issue:
- 1
- ISSN:
- 2397-4621
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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