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1. Efficient and highly tunable second-harmonic generation in Z-cut periodically poled lithium niobate nanowaveguides

   https://doi.org/10.1364/OL.393445  

   Chen, Jia-Yang; Tang, Chao; Ma, Zhao-Hui; Li, Zhan; Meng_Sua, Yong; Huang, Yu-Ping (July 2020, Optics Letters)

   Thin-film lithium-niobate-on-insulator (LNOI) has emerged as a superior integrated-photonics platform for linear, nonlinear, and electro-optics. Here we combine quasi-phase-matching, dispersion engineering, and tight mode confinement to realize nonlinear parametric processes with both high efficiency and wide wavelength tunability. On a millimeter-long, Z-cut LNOI waveguide, we demonstrate efficient ( $1900\pm <\#comment/>500\mathrm{\%<\#comment/>}{\mathrm{W}}^{-<\#comment/>1}{\mathrm{c}\mathrm{m}}^{-<\#comment/>2}$) and highly tunable ( $-<\#comment/>1.71\mathrm{n}\mathrm{m}/\mathrm{K}$) second-harmonic generation from 1530 to 1583 nm by type-0 quasi-phase-matching. Our technique is applicable to optical harmonic generation, quantum light sources, frequency conversion, and many other photonic information processes across visible to mid-IR spectral bands. 

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2. Mid-IR spectroscopy of Er ³⁺ doped low-phonon CsCdCl ₃ and CsPbCl ₃ crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei_Ei; Fleischman, Zackery_D; McKay, Jason; Hommerich, Uwe; Kabir, Al_Amin; Riggins, Jazmine; Trivedi, Sudhir; Dubinskii, Mark (September 2022, Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of ${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at $\sim <\#comment/>800\mathrm{n}\mathrm{m}$and $\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at $\sim <\#comment/>1.55$, $\sim <\#comment/>2.75$, $\sim <\#comment/>3.5$, and $\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of $\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of $\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the ${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be $\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and $\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed. 

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3. Modifications of ion beam sputtered tantala thin films by secondary argon and oxygen bombardment

   https://doi.org/10.1364/AO.59.00A150  

   Yang, Le; Randel, Emmett; Vajente, Gabriele; Ananyeva, Alena; Gustafson, Eric; Markosyan, Ashot; Bassiri, Riccardo; Fejer, Martin; Menoni, Carmen (January 2020, Applied Optics)

   Amorphous tantala ( ${\mathrm{T}\mathrm{a}}_2{\mathrm{O}}_5$) thin films were deposited by reactive ion beam sputtering with simultaneous low energy assist ${\mathrm{A}\mathrm{r}}^{+}$or ${\mathrm{A}\mathrm{r}}^{+}/{\mathrm{O}}_2^{+}$bombardment. Under the conditions of the experiment, the as-deposited thin films are amorphous and stoichiometric. The refractive index and optical band gap of thin films remain unchanged by ion bombardment. Around 20% improvement in room temperature mechanical loss and 60% decrease in absorption loss are found in samples bombarded with 100-eV ${\mathrm{A}\mathrm{r}}^{+}$. A detrimental influence from low energy ${\mathrm{O}}_2^{+}$bombardment on absorption loss and mechanical loss is observed. Low energy ${\mathrm{A}\mathrm{r}}^{+}$bombardment removes excess oxygen point defects, while ${\mathrm{O}}_2^{+}$bombardment introduces defects into the tantala films. 

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4. High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure

   https://doi.org/10.1364/OL.400917  

   Velpula, Ravi_Teja; Jain, Barsha; Velpula, Swetha; Nguyen, Hoang-Duy; Nguyen, Hieu_Pham_Trung (September 2020, Optics Letters)

   In this Letter, the electron-blocking-layer (EBL)-free AlGaN ultraviolet (UV) light-emitting diodes (LEDs) using a strip-in-a-barrier structure have been proposed. The quantum barrier (QB) structures are systematically engineered by integrating a 1 nm intrinsic ${\mathrm{A}\mathrm{l}}_x{\mathrm{G}\mathrm{a}}_{(1-<\#comment/>x)}\mathrm{N}$strip into the middle of QBs. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher carrier radiative recombination. Our study shows that the proposed structure improves radiative recombination by $\sim <\#comment/>220\mathrm{\%<\#comment/>}$, reduces electron leakage by $\sim <\#comment/>11$times, and enhances optical power by $\sim <\#comment/>225\mathrm{\%<\#comment/>}$at 60 mA current injection compared to a conventional AlGaN EBL LED structure. Moreover, the EBL-free strip-in-a-barrier UV LED records the maximum internal quantum efficiency (IQE) of $\sim <\#comment/>61.5\mathrm{\%<\#comment/>}$which is $\sim <\#comment/>72\mathrm{\%<\#comment/>}$higher, and IQE droop is $\sim <\#comment/>12.4\mathrm{\%<\#comment/>}$, which is $\sim <\#comment/>333\mathrm{\%<\#comment/>}$less compared to the conventional AlGaN EBL LED structure at $\sim <\#comment/>284.5\mathrm{n}\mathrm{m}$wavelength. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance the optical power and produce highly efficient UV emitters. 

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5. Growth and characterization of Sc ₂ O ₃ doped Ta ₂ O ₅ thin films

   https://doi.org/10.1364/AO.59.00A106  

   Fazio, Mariana; Yang, Le; Markosyan, Ashot; Bassiri, Riccardo; Fejer, Martin_M; Menoni, Carmen_S (December 2019, Applied Optics)

   We present the optical and structural characterization of films of ${\mathrm{T}\mathrm{a}}_2{\mathrm{O}}_5$, ${\mathrm{S}\mathrm{c}}_2{\mathrm{O}}_3$, and ${\mathrm{S}\mathrm{c}}_2{\mathrm{O}}_3$doped ${\mathrm{T}\mathrm{a}}_2{\mathrm{O}}_5$with a cation ratio around 0.1 grown by reactive sputtering. The addition of ${\mathrm{S}\mathrm{c}}_2{\mathrm{O}}_3$as a dopant induces the formation of tantalum suboxide due to the “oxygen getter” property of scandium. The presence of tantalum suboxide greatly affects the optical properties of the coating, resulting in higher absorption loss at $\mathrm{\lambda <\#comment/>}=1064\mathrm{n}\mathrm{m}$. The refractive index and optical band gap of the mixed film do not correspond to those of a mixture of ${\mathrm{T}\mathrm{a}}_2{\mathrm{O}}_5$and ${\mathrm{S}\mathrm{c}}_2{\mathrm{O}}_3$, given the profound structural modifications induced by the dopant. 

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