More Like this

1. Strain-mediated magneto-electric interactions in hexagonal ferrite and ferroelectric coaxial nanofibers

   https://doi.org/10.1557/mrc.2020.30  

   Liu, Y. ; Zhou, P. ; Fu, J. ; Iyengar, M. ; Liu, N. ; Du, P. ; Xiong, Y. ; Moiseienko, V. ; Zhang, W. ; Zhang, J. ; et al ( June 2020 , MRS Communications)

   Abstract This report is on the synthesis by electrospinning of multiferroic core-shell nanofibers of strontium hexaferrite and lead zirconate titanate or barium titanate and studies on magneto-electric (ME) coupling. Fibers with well-defined core–shell structures showed the order parameters in agreement with values for nanostructures. The strength of ME coupling measured by the magnetic field-induced polarization showed the fractional change in the remnant polarization as high as 21%. The ME voltage coefficient in H-assembled films showed the strong ME response for the zero magnetic bias field. Follow-up studies and potential avenues for enhancing the strength of ME coupling in the core–shellmore »nanofibers are discussed.« less
2. Nonlinear magnetoelectric effects in Al-substituted strontium hexaferrite

   https://doi.org/10.1038/s41598-021-88203-w  

   Liu, Ying ; Popov, Maksym ; Zavislyak, Igor ; Qu, Hongwei ; Zhang, T. ; Zhang, Jitao ; Page, M. R. ; Balbashov, A. M. ; Srinivasan, G. ( April 2021 , Scientific Reports)

   This report is on the observation and theory of electric fieldEinduced non-linear magnetoelectric (NLME) effects in single crystal platelets of ferrimagnetic M-type strontium aluminum hexagonal ferrite. Using microwave measurement techniques, it was found that a DC electric field along the hexagonal c-axis results in significant changes in the saturation magnetization and uniaxial magneto-crystalline anisotropy field and these changes are proportional to the square of the applied static electric field. The NLME effects were present with or without an external bias magnetic field. TheE-induced variation in magnetic order parameters is attributed to weakening of magnetic exchange and spin–orbit interactions sincemore »conduction electrons in the ferrite are effectively excluded from both interactions while being in transit from one Fe ion to another. We present a phenomenological theory which considers magneto-bielectric effects characterized by a quadratic term in electric fieldEin the free energy density. The coefficients for the NLME coupling terms have been calculated from experimental data and they do show variations with the Al substitution level and the largest rates of change of the saturation magnetization and anisotropy constant change with the applied power were observed for x = 0.4. It was also clear from the study that strength of the NLME effect does not depend on the amount Al substitution, but critically depends on the electrical conductivity of the sample with the highest NLME coefficients estimated for the sample with the highest conductivity. Results of this work are of importance for a new family of electric field tunable, miniature, high frequency ferrite devices.

   « less
3. Magnetic memory driven by topological insulators

   https://doi.org/10.1038/s41467-021-26478-3  

   Wu, Hao ; Chen, Aitian ; Zhang, Peng ; He, Haoran ; Nance, John ; Guo, Chenyang ; Sasaki, Julian ; Shirokura, Takanori ; Hai, Pham Nam ; Fang, Bin ; et al ( October 2021 , Nature Communications)

   Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.2 × 10⁵ A cm⁻²have been simultaneously achieved in the TI-MTJ device at room temperature, laying down the foundation for TI-driven SOT-MRAM. Themore »charge-spin conversion efficiencyθ_SHin TIs is quantified by both the SOT-induced shift of the magnetic switching field (θ_SH = 1.59) and the SOT-induced ferromagnetic resonance (ST-FMR) (θ_SH = 1.02), which is one order of magnitude larger than that in conventional heavy metals. These results inspire a revolution of SOT-MRAM from classical to quantum materials, with great potential to further reduce the energy consumption.

   « less
4. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments andmore »modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less
5. Colossal Magnetoelectric Effect in Core–Shell Magnetoelectric Nanoparticles

   https://doi.org/10.1021/acs.nanolett.0c01588  

   Wang, Ping ; Zhang, Elric ; Toledo, Dennis ; Smith, Isadora Takako ; Navarrete, Brayan ; Furman, Nathaniel ; Hernandez, Alexandro Franco ; Telusma, Mackenson ; McDaniel, Dwayne ; Liang, Ping ; et al ( July 2020 , Nano Letters)

   Magnetoelectric coefficient values of above 5 and 2 V cm–1 Oe–1 in 20 nm CoFe2O4–BaTiO3 and NiFe2O4–BaTiO3 core–shell magnetoelectric nanoparticles were demonstrated. These colossal values, compared to 0.1 V cm–1 Oe–1 commonly reported for the 0–3 system, are attributed to (i) the heterostructural lattice-matched interface between the magnetostrictive core and the piezoelectric shell, confirmed through transmission electron microscopy, and (ii) in situ scanning tunneling microscopy nanoprobe-based ME characterization. The nanoprobe technique allows measurements of the ME effect at a single-nanoparticle level which avoids the charge leakage problem of traditional powder form measurements. The difference in the frequency dependence of themore »ME value between the two material systems is owed to the Ni-ferrite cores becoming superparamagnetic in the near-dc frequency range. The availability of novel nanostructures with colossal ME values promises to unlock many new applications ranging from energy-efficient information processing to nanomedicine and brain–machine interfaces.« less