Due to their non-volatility and intrinsic current integration capabilities, spintronic devices that rely on domain wall (DW) motion through a free ferromagnetic track have garnered significant interest in the field of neuromorphic computing. Although a number of such devices have already been proposed, they require the use of external circuitry to implement several important neuronal behaviors. As such, they are likely to result in either a decrease in energy efficiency, an increase in fabrication complexity, or even both. To resolve this issue, we have proposed three individual neurons that are capable of performing these functionalities without the use of any external circuitry. To implement leaking, the first neuron uses a dipolar coupling field, the second uses an anisotropy gradient, and the third uses shape variations of the DW track.
CMOS-Free Magnetic Domain Wall Leaky Integrate-and-Fire Neurons with Intrinsic Lateral Inhibition
Spintronic devices, especially those based on motion of a domain wall (DW) through a ferromagnetic track, have received a significant amount of interest in the field of neuromorphic computing because of their non-volatility and intrinsic current integration capabilities. Many spintronic neurons using this technology have already been proposed, but they also require external circuitry or additional device layers to implement other important neuronal behaviors. Therefore, they result in an increase in fabrication complexity and/or energy consumption. In this work, we discuss three neurons that implement these functions without the use of additional circuitry or material layers.
- Award ID(s):
- 1910800
- Publication Date:
- NSF-PAR ID:
- 10231016
- Journal Name:
- IEEE International Symposium on Circuits and Systems
- Page Range or eLocation-ID:
- 1 to 5
- Sponsoring Org:
- National Science Foundation
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Accepted Manuscript1.0
- Publisher's Version of Record
- https://doi.org/10.1109/ISCAS45731.2020.9180510
