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1. High Power Density EMI Mitigation in Power Electronics Converters: Active and Integrated Solutions

   Fang Luo, Balaji Narayanasamy (April 2020, 11th International Conference on Integrated Power Electronics Systems)

   null (Ed.)

   raditional bulk passive EMI filters are the “necessary evil” for modern power electronics systems yet they are also the bottle-neck for the improvement of power density. This limitation is caused by the low power-density of passive components themselves and the conventional passive components are structurally optimized when assembled together. Use of active circuits and integration approach in EMI noise filtering have been proven to be effective in shrinking the size and weight of traditional EMI filters. This paper presents an overview of the latest works in the area of active EMI filtering, passive integration and a combination of both techniques. The paper compares passive volume reduction with active EMI filtering and summaries a list of materials and processes involved in the passive integration techniques. These new approaches provide potential high density solutions for EMI mitigation in power electronics converters. 

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2. A Compact F-band Filter Based on SiC Substrate-integrated Waveguides

   https://doi.org/10.1109/APMC57107.2023.10439892  

   Wang, Xiaopeng; Asadi, Mohammad Javad; Li, Lei; Li, Tianze; Hwang, James_C M; Thome, Fabian; Brückner, Peter; Schwantuschke, Dirk (December 2023, IEEE)

   F-band substrate-integrated waveguides (SIWs) are designed, fabricated, and characterized on a SiC wafer, along with SIW-based filters, impedance standards, and transitions to grounded coplanar waveguides (GCPWs). The GCPW-SIW transitions not only facilitate wafer probing, but also double as resonators to form a 3-pole band-pass filter together with an SIW resonator. The resulted filter exhibits a 1.5-dB insertion loss at 115 GHz with a 34-dB return loss and a 19-GHz (16%) 3-dB bandwidth. The size of the filter is only 63% of previous filters comprising three SIW resonators. These results show the feasibility for monolithic integration of highquality filters with high-efficiency antennas and amplifiers in a single-chip RF frontend above 110 GHz, which is particularly advantageous for 6G wireless communications and nextgeneration automobile radars. 

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3. Design of a 2.5 kW Four-Level Interleaved Flying Capacitor Multilevel Totem-Pole PFC Converter With AC-Side Passive Volume Optimization

   https://doi.org/10.1109/OJPEL.2024.3359479  

   Ishraq, Naveed; Mallik, Ayan (January 2024, IEEE Open Journal of Power Electronics)

   In this article, a high-efficiency and high-density 2.5 kW four-level interleaved flying capacitor multilevel (FCML) totem-pole bridgeless power-factor-correction (PFC) rectifier with 200 V GaN devices is analyzed, designed, and tested. This 2.5 kW four-level continuous conduction mode (CCM) GaN totem pole PFC operates with three times inductor current ripple frequency than that of the switching frequency which significantly reduces the size of the inductors while also supporting switching loss reduction. This article compares the loss of the two-level CCM GaN totem-pole PFC, four-level non-interleaved FCML PFC and interleaved four-level FCML PFC with the same ripple frequency (300 kHz) and shows that the interleaved four-level CCM GaN PFC has much less device loss. In addition, this article discusses the detailed EMI spectrum analysis and derivation of the mathematical model for determining the attenuation requirement of the four-level interleaved FCML PFC converter followed by volumetric co-optimization of AC-side passives i.e., the boost inductor and differential mode (DM) EMI filter. A 2.5 kW four-level interleaved FCML GaN totem-pole PFC prototype with an optimized 94 kHz switching frequency is developed and tested in this article. The converter exhibits a peak efficiency of 99.14% with system power density reaching 89.47 W/inch3. 

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4. Orthogonal Filter Frequency Followed by LNA Linearity Tuning for Efficient Instinctual GaN Receiver Front-End

   https://doi.org/10.1109/TCSI.2023.3303778  

   Yang, Jie; Chatterjee, Baibhab; Khater, Mohammad Abu; Thorsell, Mattias; Gunnarsson, Sten E; Sen, Shreyas (November 2023, IEEE Transactions on Circuits and Systems I: Regular Papers)

   This work presents an interference-adaptive Gallium Nitride (GaN) low-noise amplifier (LNA) front-end with orthogonal frequency and linearity tuning for applications in communication base stations, radar and electronic warfare (EW). The system operates between 2–6 GHz and provides a sub 5 ms tuning time for an input power tuning range of 40 dB. The orthogonal tuning consists of two phases: 1. frequency tuning with four tunable bandpass and bandstop filters for interference rejection, 2. linearity tuning with a combination of coarse tuning through look-up table (LUT) and fine-tuning through incremental adaptation to trade off power with linearity. GaN LNA’s linearity can be adjusted between P textsubscript 1dB,IN = -10 and 1.5 dBm with output P textsubscript 1dB up to 25 dBm (11.5 dB range) with the LNA power changing from 500 mW to 2 W (x4 increase). The average LNA power with orthogonal frequency and linearity tuning decreases by 56% as compared with the system operating at the worst-case no tuning condition. Two systems involving commercial filters and custom cavity resonator-based filters were constructed. The filters further increase the system P textsubscript 1dB,IN by the filter rejection of the interference signal. The rest of the controls consume about 10% of the worst-case condition LNA power. 

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5. A Radio Frequency Comb Filter for Sparse Fourier Transform-Based Spectrum Sensing

   https://doi.org/10.1109/ULTSYM.2018.8579645  

   Lu, Ruochen; Manzaneque, Tomas; Yang, Yansong; Zhou, Jin; Hassanieh, Haitham; Gong, Songbin (October 2018, 2018 IEEE International Ultrasonics Symposium (IUS))

   This work demonstrates a passive low-insertion-loss (IL)RF filter with periodic passbands and capable of sparsifying the spectrum from 238 to 526 MHz for sparse Fourier transform (SFT)based spectrum sensing. The demonstrated periodic filter employs LiNbO 3 lateral overtone bulk acoustic resonators (LOBARs)with high-quality factors (Qs), large electromechanical coupling (k t 2 ), and multiple equally spaced resonances in a ladder topology. The fabricated LOBARs show k t 2 larger than 1.5% and figure of merits (k 2 Q) more than 30 for over 10 tones simultaneously and are both among the highest demonstrated in overmoded resonators. The multi-band filter centered at 370 MHz have then been obtained with a passband span of 291 MHz, a spectral spacing of 22 MHz, an IL of 2 dB, FBWs around 0.6%, and a sparsification ratio between 7 and 15. An out-of-band rejection around 25 dB has also been achieved for more than 14 bands. The great performance demonstrated by the RF filter with 14 useable periodic passbands will serve to enable future sparse Fourier transform-based spectrum sensing. 

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