High-k Oxide Field-Plated Vertical (001) β-Ga 2 O 3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm 2
- Award ID(s):
- 1931652
- Publication Date:
- NSF-PAR ID:
- 10285340
- Journal Name:
- IEEE Electron Device Letters
- Volume:
- 42
- Issue:
- 8
- Page Range or eLocation-ID:
- 1140 to 1143
- ISSN:
- 0741-3106
- Sponsoring Org:
- National Science Foundation
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