The generation of rapidly tunable optical vortex (OV) beams is one of the most demanding research areas of the present era as they possess orbital angular momentum (OAM) with additional degrees of freedom that can be exploited to enhance signal‐carrying capacity by using mode division multiplexing and information encoding in optical communication. Particularly, rapidly tunable OAM devices at a fixed wavelength in the telecom band stir extensive interest among researchers for both classical and quantum applications. This article demonstrates the realistic design of a Si‐integrated photonic device for rapidly tunable OAM wave generation at a 1550‐nm wavelength by using an ultra‐low‐loss phase change material (PCM) embedded with a Si‐ring resonator with angular gratings. Different OAM modes are achieved by tuning the effective refractive index using rapid electrical switching of Sb2Se3 film from amorphous to crystalline states and vice versa. The generation of OAM waves relies on a traveling wave modulation of the refractive index of the micro‐ring, which breaks the degeneracy of oppositely oriented whispering gallery modes. The proposed device is capable of producing rapidly tunable OV beams, carrying different OAM modes by using electrically controllable switching of ultra‐low‐loss PCM Sb2Se3.
In this work, we explore inverse designed reconfigurable digital metamaterial structures based on phase change material Sb2Se3for efficient and compact integrated nanophotonics. An exemplary design of a 1 × 2 optical switch consisting of a 3 µm x 3 µm pixelated domain is demonstrated. We show that: (i) direct optimization of a domain containing only Si and Sb2Se3pixels does not lead to a high extinction ratio between output ports in the amorphous state, which is owed to the small index contrast between Si and Sb2Se3in such a state. As a result, (ii) topology optimization, e.g., the addition of air pixels, is required to provide an initial asymmetry that aids the amorphous state's response. Furthermore, (iii) the combination of low loss and high refractive index change in Sb2Se3, which is unique among all phase change materials in the telecommunications 1550 nm band, translates into an excellent projected performance; the optimized device structure exhibits a low insertion loss (∼1.5 dB) and high extinction ratio (>18 dB) for both phase states.
more » « less- Award ID(s):
- 1936729
- NSF-PAR ID:
- 10288276
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Optical Materials Express
- Volume:
- 11
- Issue:
- 9
- ISSN:
- 2159-3930
- Page Range / eLocation ID:
- Article No. 3007
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
Abstract -
Non‐Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low‐Loss Phase Change Materialmore » « less
Abstract Phase change materials (PCMs) have long been used as a storage medium in rewritable compact disk and later in random access memory. In recent years, integration of PCMs with nanophotonic structures has introduced a new paradigm for non‐volatile reconfigurable optics. However, the high loss of the archetypal PCM Ge2Sb2Te5in both visible and telecommunication wavelengths has fundamentally limited its applications. Sb2S3has recently emerged as a wide‐bandgap PCM with transparency windows ranging from 610 nm to near‐IR. In this paper, the strong optical phase modulation and low optical loss of Sb2S3are experimentally demonstrated for the first time in integrated photonic platforms at both 750 and 1550 nm. As opposed to silicon, the thermo‐optic coefficient of Sb2S3is shown to be negative, making the Sb2S3–Si hybrid platform less sensitive to thermal fluctuation. Finally, a Sb2S3integrated non‐volatile microring switch is demonstrated which can be tuned electrically between a high and low transmission state with a contrast over 30 dB. This work experimentally verifies prominent phase modification and low loss of Sb2S3in wavelength ranges relevant for both solid‐state quantum emitter and telecommunication, enabling potential applications such as optical field programmable gate array, post‐fabrication trimming, and large‐scale integrated quantum photonic network.
-
more » « less
Abstract The primary mechanism of optical memoristive devices relies on phase transitions between amorphous and crystalline states. The slow or energy‐hungry amorphous–crystalline transitions in optical phase‐change materials are detrimental to the scalability and performance of devices. Leveraging an integrated photonic platform, nonvolatile and reversible switching between two layered structures of indium selenide (In2Se3) triggered by a single nanosecond pulse is demonstrated. The high‐resolution pair distribution function reveals the detailed atomistic transition pathways between the layered structures. With interlayer “shear glide” and isosymmetric phase transition, switching between the α‐ and β‐structural states contains low re‐configurational entropy, allowing reversible switching between layered structures. Broadband refractive index contrast, optical transparency, and volumetric effect in the crystalline–crystalline phase transition are experimentally characterized in molecular‐beam‐epitaxy‐grown thin films and compared to ab initio calculations. The nonlinear resonator transmission spectra measure of incremental linear loss rate of 3.3 GHz, introduced by a 1.5 µm‐long In2Se3‐covered layer, resulted from the combinations of material absorption and scattering.
-
more » « less
We propose a nanogap-enhanced phase-change waveguide with silicon PIN heaters. Thanks to the enhanced light-matter interaction in the nanogap, the proposed structure exhibits strong attenuation (Δ
α = ∼35 dB/µm) and optical phase (Δn eff = ∼1.2) modulation atλ =λ3 . By exploiting a directional coupler design, we present a 1 × 2 optical switch with an insertion loss of < 4 dB and a compact coupling length of ∼ 15 µm while maintaining small crosstalk less than −7.2 dB over an optical bandwidth of 50 nm. Thermal analysis shows that a 10 V pulse of 30 ns (1×1 modulator) and 55 ns (1×2 switch) in duration is required to raise the GST temperature of the phase-change waveguide above the melting temperature to induce the amorphization; however, the complete crystallization occurs by applying a 5 V pulse of 180 ns (1×1 modulator) and a 6 V pulse of 200 ns (1×2 switch), respectively. -
more » « less
Bragg gratings offer high-performance filtering and routing of light on-chip through a periodic modulation of a waveguide’s effective refractive index. Here, we model and experimentally demonstrate the use of Sb2Se3, a nonvolatile and transparent phase-change material, to tune the resonance conditions in two devices which leverage periodic Bragg gratings—a stopband filter and Fabry-Perot cavity. Through simulations, we show that similar refractive indices between silicon and amorphous Sb2Se3can be used to induce broadband transparency, while the crystalline state can enhance the index contrast in these Bragg devices. Our experimental results show the promise and limitations of this design approach and highlight specific fabrication challenges which need to be addressed in future implementations.
