Electrical resistivity measurements were performed on single crystals of URu2–
- Award ID(s):
- 1810310
- NSF-PAR ID:
- 10288883
- Date Published:
- Journal Name:
- Proceedings of the National Academy of Sciences
- Volume:
- 117
- Issue:
- 48
- ISSN:
- 0027-8424
- Page Range / eLocation ID:
- 30220 to 30227
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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x Osx Si2up tox = 0.28 under hydrostatic pressure up toP = 2 GPa. As the Os concentration,x , is increased, 1) the lattice expands, creating an effective negative chemical pressureP ch(x ); 2) the hidden-order (HO) phase is enhanced and the system is driven toward a large-moment antiferromagnetic (LMAFM) phase; and 3) less external pressureP cis required to induce the HO→LMAFM phase transition. We compare the behavior of theT (x ,P ) phase boundary reported here for the URu2-x Osx Si2system with previous reports of enhanced HO in URu2Si2upon tuning withP or similarly in URu2–x Fex Si2upon tuning with positiveP ch(x ). It is noteworthy that pressure, Fe substitution, and Os substitution are the only known perturbations that enhance the HO phase and induce the first-order transition to the LMAFM phase in URu2Si2. We present a scenario in which the application of pressure or the isoelectronic substitution of Fe and Os ions for Ru results in an increase in the hybridization of the U-5f -electron and transition metald -electron states which leads to electronic instability in the paramagnetic phase and the concurrent formation of HO (and LMAFM) in URu2Si2. Calculations in the tight-binding approximation are included to determine the strength of hybridization between the U-5f -electron states and thed -electron states of Ru and its isoelectronic Fe and Os substituents in URu2Si2. -
A s a c om pl e men t t o da ta d edupli cat ion , de lta c om p ress i on fu r- t he r r edu c es t h e dat a vo l u m e by c o m pr e ssi n g n o n - dup li c a t e d ata chunk s r e l a t iv e to t h e i r s i m il a r chunk s (bas e chunk s). H ow ever, ex is t i n g p o s t - d e dup li c a t i o n d e l t a c o m pr e ssi o n a p- p ro a ches fo r bac kup s t or ag e e i t h e r su ffe r f ro m t h e l ow s i m - il a r i t y b e twee n m any de te c ted c hun ks o r m i ss so me po t e n - t i a l s i m il a r c hunks , o r su ffer f r om l ow (ba ckup and r es t ore ) th r oug hpu t du e t o extr a I/ Os f or r e a d i n g b a se c hun ks o r a dd a dd i t i on a l s e r v i c e - d i s r up t ive op e r a t i on s to b a ck up s ys t em s. I n t h i s pa p e r, w e pr opo se L oop D e l t a t o a dd ress the above - m e n t i on e d prob l e m s by an e nha nced em b e ddi n g d e l t a c o m p - r e ss i on sc heme i n d e dup li c a t i on i n a non - i n t ru s ive way. T h e e nha nce d d elt a c o mpr ess ion s che m e co m b in e s f our key t e c h - ni qu e s : (1) du a l - l o c a li t y - b a s e d s i m il a r i t y t r a c k i n g to d e t ect po t e n t i a l si m il a r chun k s b y e x p l o i t i n g both l o g i c a l and ph y - s i c a l l o c a li t y, ( 2 ) l o c a li t y - a wa r e pr e f e t c h i n g to pr efe tc h ba se c hun ks to a vo i d ex t ra I/ Os fo r r e a d i n g ba s e chun ks on t h e w r i t e p at h , (3) c a che -aware fil t e r to avo i d ext r a I/Os f or b a se c hunk s on t he read p at h, a nd (4) i nver sed de l ta co mpressi on t o perf orm de lt a co mpress i o n fo r d at a chunk s t hat a re o th e r wi se f o r b i dd e n to s er ve as ba se c hunk s by r ew r i t i n g t e c hn i qu e s d e s i g n e d t o i m p r ove r es t o re pe rf o rma nc e. E x p e r i m e n t a l re su lts indi ca te t hat L oop D e l t a i ncr ea se s t he c o m pr e ss i o n r a t i o by 1 .2410 .97 t i m e s on t op of d e dup li c a - t i on , wi t hou t no t a b l y a ffe c t i n g th e ba ck up th rou ghpu t, a nd i t i m p r ove s t he res to re p er fo r m an ce b y 1.23.57 t i m emore » « less
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Abstract The quinary members in the solid solution Hf2Fe1−
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Abstract Previous high-resolution angle-resolved photoemission (ARPES) studies of URu2Si2have characterized the temperature-dependent behavior of narrow-band states close to the Fermi level (
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