A knowledge-based understanding of the plasma-surface-interaction with the aim to precisely control (reactive) sputtering processes for the deposition of thin films with tailored and reproducible properties is highly desired for industrial applications. In order to understand the effect of plasma parameter variations on the film properties, a single plasma parameter needs to be varied, while all other process and plasma parameters should remain constant. In this work, we use the Electrical Asymmetry Effect in a multi-frequency capacitively coupled plasma to control the ion energy at the substrate without affecting the ion-to-growth flux ratio by adjusting the relative phase between two consecutive driving harmonics and their voltage amplitudes. Measurements of the ion energy distribution function and ion flux at the substrate by a retarding field energy analyzer combined with the determined deposition rate
- Publication Date:
- NSF-PAR ID:
- 10303282
- Journal Name:
- Plasma Sources Science and Technology
- Volume:
- 28
- Issue:
- 11
- Page Range or eLocation-ID:
- Article No. 114001
- ISSN:
- 0963-0252
- Publisher:
- IOP Publishing
- Sponsoring Org:
- National Science Foundation
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