Multidimensional power devices can achieve performance beyond conventional limits by deploying charge‐balanced p‐n junctions. A key obstacle to developing such devices in many wide‐bandgap (WBG) and ultra‐wide bandgap (UWBG) semiconductors is the difficulty of native p‐type doping. Here the WBG nickel oxide (NiO) as an alternative p‐type material is investigated. The acceptor concentration (
The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates an UWBG semiconductor that exhibits robust doping with high carrier mobility over a wide range of carrier concentrations. Here we demonstrate that epitaxial thin films of the perovskite oxide Nd
- NSF-PAR ID:
- 10305247
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Communications Physics
- Volume:
- 4
- Issue:
- 1
- ISSN:
- 2399-3650
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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