skip to main content


Title: Probing the electronic properties of the electrified silicon/water interface by combining simulations and experiments

Silicon (Si) is broadly used in electrochemical and photoelectrochemical devices, where the capacitive and Faradaic reactions at the Si/water interfaces are critical for signal transduction or noise generation. However, probing the electrified Si/water interface at the microscopic level remains a challenging task. Here we focus on hydrogenated Si surfaces in contact with water, relevant to transient electronics and photoelectrochemical modulation of biological cells and tissues. We show that by carrying out first-principles molecular dynamics simulations of the Si(100)/water interface in the presence of an electric field we can realistically correlate the computed flat-band potential and tunneling current images at the interface with experimentally measured capacitive and Faradaic currents. Specifically, we validate our simulations in the presence of bias by performing pulsed chronoamperometry measurements on Si wafers in solution. Consistent with prior experiments, our measurements and simulations indicate the presence of voltage-dependent capacitive currents at the interface. We also find that Faradaic currents are weakly dependent on the applied bias, which we relate to surface defects present in newly prepared samples.

 
more » « less
Award ID(s):
2011854
NSF-PAR ID:
10307114
Author(s) / Creator(s):
; ; ;
Publisher / Repository:
Proceedings of the National Academy of Sciences
Date Published:
Journal Name:
Proceedings of the National Academy of Sciences
Volume:
118
Issue:
46
ISSN:
0027-8424
Page Range / eLocation ID:
Article No. e2114929118
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Unbiased photoelectrochemical hydrogen production with high efficiency and durability is highly desired for solar energy storage. Here, we report a microbial photoelectrochemical (MPEC) system that demonstrated superior performance when equipped with bioanodes and black silicon photocathode with a unique ‘‘Swiss-cheese’’ interface. The MPEC utilizes the chemical energy embedded in wastewater organics to boost solar H2 production, which overcomes barriers on anode H2O oxidation. Without any bias, the MPEC generates a record photocurrent (up to 23 mA cm2) and retains prolonged stability for over 90 hours with high Faradaic efficiency (96–99%). The calculated turnover number for MoSx catalyst during a 90 h period is 495 471 with an average frequency of 1.53 s1 . The system replaced pure water on the anode with actual wastewater and achieved waste organic removal up to 16 kg COD m2 photocathode per day. Cost credits from concurrent wastewater treatment and low-cost design make photoelectrochemical H2 production practical for the first time 
    more » « less
  2. Unbiased photoelectrochemical hydrogen production with high efficiency and durability is highly desired for solar energy storage. Here, we report a microbial photoelectrochemical (MPEC) system that demonstrated superior performance when equipped with bioanodes and black silicon photocathode with a unique “Swiss-cheese” interface. The MPEC utilizes the chemical energy embedded in wastewater organics to boost solar H 2 production, which overcomes barriers on anode H 2 O oxidation. Without any bias, the MPEC generates a record photocurrent (up to 23 mA cm −2 ) and retains prolonged stability for over 90 hours with high Faradaic efficiency (96–99%). The calculated turnover number for MoS x catalyst during a 90 h period is 495 471 with an average frequency of 1.53 s −1 . The system replaced pure water on the anode with actual wastewater and achieved waste organic removal up to 16 kg COD m −2 photocathode per day. Cost credits from concurrent wastewater treatment and low-cost design make photoelectrochemical H 2 production practical for the first time. 
    more » « less
  3. Ultrawide bandgap β-(AlxGa1−x)2O3 vertical Schottky barrier diodes on (010) β-Ga2O3 substrates are demonstrated. The β-(AlxGa1−x)2O3 epilayer has an Al composition of 21% and a nominal Si doping of 2 × 1017 cm−3 grown by molecular beam epitaxy. Pt/Ti/Au has been employed as the top Schottky contact, whereas Ti/Au has been utilized as the bottom Ohmic contact. The fabricated devices show excellent rectification with a high on/off ratio of ∼109, a turn-on voltage of 1.5 V, and an on-resistance of 3.4 mΩ cm2. Temperature-dependent forward current-voltage characteristics show effective Schottky barrier height varied from 0.91 to 1.18 eV while the ideality factor from 1.8 to 1.1 with increasing temperatures, which is ascribed to the inhomogeneity of the metal/semiconductor interface. The Schottky barrier height was considered a Gaussian distribution of potential, where the extracted mean barrier height and a standard deviation at zero bias were 1.81 and 0.18 eV, respectively. A comprehensive analysis of the device leakage was performed to identify possible leakage mechanisms by studying temperature-dependent reverse current-voltage characteristics. At reverse bias, due to the large Schottky barrier height, the contributions from thermionic emission and thermionic field emission are negligible. By fitting reverse leakage currents at different temperatures, it was identified that Poole–Frenkel emission and trap-assisted tunneling are the main leakage mechanisms at high- and low-temperature regimes, respectively. Electrons can tunnel through the Schottky barrier assisted by traps at low temperatures, while they can escape these traps at high temperatures and be transported under high electric fields. This work can serve as an important reference for the future development of ultrawide bandgap β-(AlxGa1−x)2O3 power electronics, RF electronics, and ultraviolet photonics.

     
    more » « less
  4. The electrical characterization and ammonia vapor (NH3) response of a p‐Si/n‐poly[benzimidazobenzophenanthroline] (n‐BBL) thin‐film junction diode are reported. The presence of a depletion layer at the n‐BBL/p‐Si interface is verifiedviacapacitance–voltage measurements, and the built‐in potential is ≈1.8 V. Using the standard diode equation for data analysis, the turn‐on voltage, rectification ratio, and ideality parameter are found to be 2 V, 16, and 6, respectively. The diode is also tested in the presence of NH3vapor where it retained its asymmetricJVbehavior with increased currents and an insignificant change in device parameters. NH3is believed to interact with the adsorbed O2species on the n‐BBL surface liberating electrons that enhance the diode current. The response time, recovery time, and sensitivity of the diode are 65 s, 121 s, and 52%, respectively. The removal of the gas restores the diode characteristics to their near original shape making it reusable. The diode is also electrically characterized as a function of temperature and is found to retain its rectifying behavior down to 150 K. The rectifying and gas‐sensing features make the diode multifunctional, which expands the range of applications of this ladder‐type conducting polymer.

     
    more » « less
  5. Abstract

    Tandem photoelectrochemical water splitting cells utilizing crystalline Si and metal oxide photoabsorbers are promising for low‐cost solar hydrogen production. This study presents a device design and a scalable fabrication scheme for a tandem heterostructure photoanode: p+n black silicon (Si)/SnO2interface/W‐doped bismuth vanadate (BiVO4)/cobalt phosphate (CoPi) catalyst. The black‐Si not only provides a substantial photovoltage of 550 mV, but it also serves as a conductive scaffold to decrease charge transport pathlengths within the W‐doped BiVO4shell. When coupled with cobalt phosphide (CoP) nanoparticles as hydrogen evolution catalysts, the device demonstrates spontaneous water splitting without employing any precious metals, achieving an average solar‐to‐hydrogen efficiency of 0.45% over the course of an hour at pH 7. This fabrication scheme offers the modularity to optimize individual cell components, e.g., Si nanowire dimensions and metal oxide film thickness, involving steps that are compatible with fabricating monolithic devices. This design is general in nature and can be readily adapted to novel, higher performance semiconducting materials beyond BiVO4as they become available, which will accelerate the process of device realization.

     
    more » « less