The geometric phase of an electronic wave function, also known as Berry phase, is the fundamental basis of the topological properties in solids. This phase can be tuned by modulating the band structure of a material, providing a way to drive a topological phase transition. However, despite significant efforts in designing and understanding topological materials, it remains still challenging to tune a given material across different topological phases while tracing the impact of the Berry phase on its quantum transport properties. Here, we report these two effects in a magnetotransport study of ZrTe5. By tuning the band structure with uniaxial strain, we use quantum oscillations to directly map a weak-to-strong topological insulator phase transition through a gapless Dirac semimetal phase. Moreover, we demonstrate the impact of the strain-tunable spin-dependent Berry phase on the Zeeman effect through the amplitude of the quantum oscillations. We show that such a spin-dependent Berry phase, largely neglected in solid-state systems, is critical in modeling quantum oscillations in Dirac bands of topological materials.
- Award ID(s):
- 1719797
- NSF-PAR ID:
- 10314900
- Date Published:
- Journal Name:
- Science Advances
- Volume:
- 5
- Issue:
- 8
- ISSN:
- 2375-2548
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
Abstract -
more » « less
Abstract Parity‐time symmetry plays an essential role for the formation of Dirac states in Dirac semimetals. So far, all of the experimentally identified topologically nontrivial Dirac semimetals (DSMs) possess both parity and time reversal symmetry. The realization of magnetic topological DSMs remains a major issue in topological material research. Here, combining angle‐resolved photoemission spectroscopy with density functional theory calculations, it is ascertained that band inversion induces a topologically nontrivial ground state in EuCd2As2. As a result, ideal magnetic Dirac fermions with simplest double cone structure near the Fermi level emerge in the antiferromagnetic (AFM) phase. The magnetic order breaks time reversal symmetry, but preserves inversion symmetry. The double degeneracy of the Dirac bands is protected by a combination of inversion, time‐reversal, and an additional translation operation. Moreover, the calculations show that a deviation of the magnetic moments from the
c ‐axis leads to the breaking of C3 rotation symmetry, and thus, a small bandgap opens at the Dirac point in the bulk. In this case, the system hosts a novel state containing three different types of topological insulator: axion insulator, AFM topological crystalline insulator (TCI), and higher order topological insulator. The results provide an enlarged platform for the quest of topological Dirac fermions in a magnetic system. -
more » « less
Abstract 5
d transition metal oxides, such as iridates, have attracted significant interest in condensed matter physics throughout the past decade owing to their fascinating physical properties that arise from intrinsically strong spin-orbit coupling (SOC) and its interplay with other interactions of comparable energy scales. Among the rich family of iridates, iridium dioxide (IrO2), a simple binary compound long known as a promising catalyst for water splitting, has recently been demonstrated to possess novel topological states and exotic transport properties. The strong SOC and the nonsymmorphic symmetry that IrO2possesses introduce symmetry-protected Dirac nodal lines (DNLs) within its band structure as well as a large spin Hall effect in the transport. Here, we review recent advances pertaining to the study of this unique SOC oxide, with an emphasis on the understanding of the topological electronic structures, syntheses of high crystalline quality nanostructures, and experimental measurements of its fundamental transport properties. In particular, the theoretical origin of the presence of the fourfold degenerate DNLs in band structure and its implications in the angle-resolved photoemission spectroscopy measurement and in the spin Hall effect are discussed. We further introduce a variety of synthesis techniques to achieve IrO2nanostructures, such as epitaxial thin films and single crystalline nanowires, with the goal of understanding the roles that each key parameter plays in the growth process. Finally, we review the electrical, spin, and thermal transport studies. The transport properties under variable temperatures and magnetic fields reveal themselves to be uniquely sensitive and modifiable by strain, dimensionality (bulk, thin film, nanowire), quantum confinement, film texture, and disorder. The sensitivity, stemming from the competing energy scales of SOC, disorder, and other interactions, enables the creation of a variety of intriguing quantum states of matter. -
more » « less
Abstract This study presents a thorough analysis of the electronic structures of the TaP
x As1−x series of compounds, which are of significant interest due to their potential as topological materials. Using a combination of first principles and Wannier‐based tight‐binding methods, this study investigates both the bulk and surface electronic structures of the compounds for varying compositions (x = 0, 0.25, 0.50, 0.75, 1), with a focus on their topological properties. By using chirality analysis, (111) surface electronic structure analysis, and surface Fermi arcs analysis, it is established that the TaPx As1−x compounds exhibit topologically nontrivial behavior, characterized as Weyl semimetals (WSMs). The effect of spin–orbit coupling (SOC) on the topological properties of the compounds is further studied. In the absence of SOC, the compounds exhibit linearly dispersive fourfold degenerate points in the first Brillouin zone (FBZ) resembling Dirac semimetals. However, the introduction of SOC induces a phase transition to WSM states, with the number and position of Weyl points (WPs) varying depending on the composition of the alloy. For example, TaP has 12 WPs in the FBZ. The findings provide novel insights into the electronic properties of TaPx As1−x compounds and their potential implications for the development of topological materials for various technological applications. -
more » « less
Bi2Se3is a prototypical topological insulator, which has a small bandgap (∼0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here, we show in a mechanically exfoliated thick (∼100 nm) nanoflake device that we can measure the energy dependent optical absorption through the photothermoelectric effect. Spectral signatures are seen for a number of optical transitions between the valence and conduction bands, including a broad peak at 1.5 eV, which is likely dominated by bulk band-to-band optical transitions but is at the same energy as the well-known optical transition between the two topologically protected conducting surface states. We also observe a surprising linear polarization dependence in the response of the device that reflects the influence of the metal contacts.
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1126/sciadv.aav9771
