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1. Lasing from InP Nanowire Photonic Crystals on InP Substrate

   https://doi.org/10.1002/adom.202001745  

   Tu, Chia‐Wei; Fränzl, Martin; Gao, Qian; Tan, Hark‐Hoe; Jagadish, Chennupati; Schmitzer, Heidrun; Wagner, Hans_Peter (December 2020, Advanced Optical Materials)

   Abstract 2D photonic crystal (PhC) lasing from an InP nanowire array still attached to the InP substrate is demonstrated for the first time. The undoped wurtzite InP nanowire array is grown by selective area epitaxy and coated with a 10 nm thick Al₂O₃film to suppress atmospheric oxidation and band‐bending effects. The PhC array displays optically pumped lasing at room temperature at a pulsed threshold fluence of 14 µJ cm⁻². At liquid nitrogen temperature, the array shows lasing under continuous wave excitation at a threshold intensity of 500 W cm⁻². The output power of the single mode laser line reaches values of 470 µW. Rate equation calculations indicate a quality factor ofQ ≈ 1000. Investigations near threshold reveal that lasing starts from isolated islands within the pumped region before coherently merging into a single homogeneous area with increasing excitation power. This field emits a lasing mode with an average off‐normal angle of ≈6°. Single mode lasing with the nanoarray still attached to the InP substrate opens new design opportunities for electrically pumped PhC laser light sources. 

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2. HENSELIAN VALUED FIELDS AND inp-MINIMALITY

   https://doi.org/10.1017/jsl.2019.56  

   CHERNIKOV, ARTEM; SIMON, PIERRE (December 2019, The Journal of Symbolic Logic)

   Abstract We prove that every ultraproduct of p -adics is inp-minimal (i.e., of burden 1). More generally, we prove an Ax-Kochen type result on preservation of inp-minimality for Henselian valued fields of equicharacteristic 0 in the RV language. 

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3. Conversion of InP Clusters to Quantum Dots

   https://doi.org/10.1021/acs.inorgchem.8b02945  

   Friedfeld, Max R.; Johnson, Dane A.; Cossairt, Brandi M. (December 2018, Inorganic Chemistry)
4. InP MOSFETs Exhibiting Record 70 mV/dec Subthreshold Swing

   Tseng, Hsin-Ying; Fang, Yihao; Zhong, Shibo; Rodwell, Mark (June 2019, 2019 IEEE Device Research Conference)

   Low InP/dielectric interface trap density Dit will enable low subthreshold swings (SS) in mm-wave MOSFETs [1] using InGaAs/InP composite channels [2] for increased breakdown and in tunnel FETs (TFETs) [3] using InAs/InP heterojunctions [4] for increased tunneling probability. Reducing Dit at the etched InP mesa edges of DHBTs and avalanche photodiodes will reduce leakage currents and increase breakdown voltages. While it can be difficult [5] to extract Dit of III-V interfaces from MOSCAP characteristics, Dit can be readily determined from the SS of long gate length Lg MOSFETs. Here we report InP-channel MOSFETs with record low SS indicating record low Dit at the semiconductor-dielectric interface. The devices use a AlOxNy/ZrO2 gate dielectric and a 14nm channel thickness Tch. A sample of 13 MOSFETs at 2 m Lg shows SS=70mV/dec. (mean) ±3 mV/dec. (standard deviation), corresponding to a minimum Dit ~3×1012 cm-2eV-1. The lowest SS observed at 2 m Lg is 66 mV/dec. The results suggest that wide-bandgap InP layers can be incorporated into MOS device designs without large degradations in DC characteristics arising from interface defects 

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5. Cation Exchange Induced Transformation of InP Magic-Sized Clusters

   https://doi.org/10.1021/acs.chemmater.7b03075  

   Stein, Jennifer L.; Steimle, Molly I.; Terban, Maxwell W.; Petrone, Alessio; Billinge, Simon J.; Li, Xiaosong; Cossairt, Brandi M. (September 2017, Chemistry of Materials)