Transition metal oxides such as BiVO 4 are promising photoelectrode materials for solar-to-fuel conversion applications. However, their performance is limited by the low carrier mobility (especially electron mobility) due to the formation of small polarons. Recent experimental studies have shown improved carrier mobility and conductivity by atomic doping; however the underlying mechanism is not understood. A fundamental atomistic-level understanding of the effects on small polaron transport is critical to future material design with high conductivity. We studied the small polaron hopping mobility in pristine and doped BiVO 4 by combining Landau–Zener theory and kinetic Monte Carlo (kMC) simulation fully from first-principles, and investigated the effect of dopant–polaron interactions on the mobility. We found that polarons are spontaneously formed at V in both pristine and Mo/W doped BiVO 4 , which can only be described correctly by density functional theory (DFT) with the Hubbard correction (DFT+U) or hybrid exchange-correlation functional but not local or semi-local functionals. We found that DFT+U and dielectric dependant hybrid (DDH) functionals give similar electron hopping barriers, which are also similar between the room temperature monoclinic phase and the tetragonal phase. The calculated electron mobility agrees well with experimental values, which is around 10 −4 cm 2 V −1 s −1 . We found that the electron polaron transport in BiVO 4 is neither fully adiabatic nor nonadiabatic, and the first and second nearest neighbor hoppings have significantly different electronic couplings between two hopping centers that lead to different adiabaticity and prefactors in the charge transfer rate, although they have similar hopping barriers. Without considering the detailed adiabaticity through Landau–Zener theory, one may get qualitatively wrong carrier mobility. We further computed polaron mobility in the presence of different dopants and showed that Cr substitution of V is an electron trap while Mo and W are “repulsive” centers, mainly due to the minimization of local lattice expansion by dopants and electron polarons. The dopants with “repulsive” interactions to polarons are promising for mobility improvement due to larger wavefunction overlap and delocalization of locally concentrated polarons.
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Intermediate polaronic charge transport in organic crystals from a many-body first-principles approach
Abstract Charge transport in organic molecular crystals (OMCs) is conventionally categorized into two limiting regimes − band transport, characterized by weak electron-phonon (e-ph) interactions, and charge hopping due to localized polarons formed by strong e-ph interactions. However, between these two limiting cases there is a less well understood intermediate regime where polarons are present but transport does not occur via hopping. Here we show a many-body first-principles approach that can accurately predict the carrier mobility in this intermediate regime and shed light on its microscopic origin. Our approach combines a finite-temperature cumulant method to describe strong e-ph interactions with Green-Kubo transport calculations. We apply this parameter-free framework to naphthalene crystal, demonstrating electron mobility predictions within a factor of 1.5−2 of experiment between 100 and 300 K. Our analysis reveals the formation of a broad polaron satellite peak in the electron spectral function and the failure of the Boltzmann equation in the intermediate regime.
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- Award ID(s):
- 1750613
- PAR ID:
- 10316748
- Date Published:
- Journal Name:
- npj Computational Materials
- Volume:
- 8
- Issue:
- 1
- ISSN:
- 2057-3960
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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